datasheet

SKM 400 GB 176 DL3
Absolute Maximum Ratings
Symbol Conditions
IGBT
: 12 9
%
: /2* 9
%<=
129" &
Trench IGBT Modules
SKM 400 GB 176 DL3
SKM 400 GAL 176 DL3
/4**
)2*
3
-* 9
8/2
3
#**
3
? 1*
: /12 9
/*
C
12 9
82*
3
-* 9
18*
3
-**
3
: /2* 9
/)1*
3
12 9
)4*
3
-* 9
8/4
3
#**
3
1#**
3
%<=1$%
#** @ > A 1* @
B /1** Inverse Diode
%,
: /2* 9
%,<=
%,<=1$%,
%,=
/* @ .
Freewheeling Diode
%,
: /2* 9
Preliminary Data
%,<=
Features
!" # $ %
& &
'%( )*
*)*+ ,
&
'%( % #./+ )*0/12012#
Typical Applications
3 &
242 5 42* 3
6! $ .
7
& Remarks
/") 5 1"2 5 8"# & ! & $
%,=
/* @ .
: /2* 9
Module
%<=
3
:
5 )* ... D /2* /12
9
/12
9
E2**
3" / .
Characteristics
Symbol Conditions
IGBT
>
> " % /1 3
%
> * " 129" &
%>
* " > 1* max.
Units
2"1
2"-
#")
*"*/#)
3
3
: 12 9
/1**
: /12 9
*
> /2 H>
[email protected]*
<>
: 12 9
&
& <>
) F
&0& 1/** 30C
<> ) F
&0& 1/** 30C
<:5
%>K
11-09-2008 DIL
3
/
: /12 9
*"E
: 129
8"8
)"1
F
: /129
2"1
#
F
1
1")2
1")2
1"E
%
8** 3" > /2 : 129.
12" > * 3
: 12 9
/ =G
1
typ.
: 12 9
: /129.
GAL
min.
: /12 9
GB
Units
12 9
>
SEMITRANSTM 9
Values
/1**
% 8**3
: /12 9
1#"1
/"/
,
,
*"--
,
8***
2
I
E88
/2E
/)8
/12*
/2*
J
/*-"E
J
*"*E
L07
© by SEMIKRON
SKM 400 GB 176 DL3
Characteristics
Symbol Conditions
Inverse Diode
, %,
8** 3@ > * ,*
,
TM
SEMITRANS
9
Trench IGBT Modules
%<<=
H
%, 8** 3
&0& 1/** 30C
> * @ /1** <:5'
&&
min.
typ.
max.
Units
: 12 9.
/"-
/"E
: /12 9.
1"/
1"2
: 12 9
/"1
/")
: /12 9
*"E
/"/
: 12 9
/"4
F
: /12 9
8
F
: /12 9
/1*
)2
3
C
11
J
*"/)
L07
Freewheeling Diode
SKM 400 GB 176 DL3
, SKM 400 GAL 176 DL3
,*
Preliminary Data
,
Features
!" # $ %
& &
'%( )*
*)*+ ,
&
'%( % #./+ )*0/12012#
Typical Applications
3 &
242 5 42* 3
6! $ .
7
& Remarks
/") 5 1"2 5 8"# & %,
8** 3@ > * %<<=
H
%, 3
> * @ /1** <:5,'
&&
<MDM
." 5
<5
&
=
N =#
=
=#
: 12 9.
/"4
/"E
: /12 9.
/"-
1
: 12 9
/"/
/"8
: /12 9
*"E
/"/
: 12 9
1
: /12 9
8
: /12 9
3
C
J
*"*E
L07
12 9
*"82
F
/12 9
*"2
F
*"*8-
L07
8
2
(
1"2
2
(
)#*
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
! & $
GB
2
GAL
11-09-2008 DIL
© by SEMIKRON
SKM 400 GB 176 DL3
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
3
11-09-2008 DIL
© by SEMIKRON
SKM 400 GB 176 DL3
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 11 CAL diode forward characteristic
4
11-09-2008 DIL
© by SEMIKRON
SKM 400 GB 176 DL3
' #/
>K
5
' #/
>3O
' #/
11-09-2008 DIL
© by SEMIKRON
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