SKM900GA12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 1305 A Tc = 80 °C 1003 A 900 A ICnom ICRM SEMITRANS® 4 IGBT4 Modules SKM900GA12E4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V 2700 A -20 ... 20 V 10 µs -40 ... 175 °C Tc = 25 °C 871 A Tc = 80 °C 651 A 800 A Tj = 150 °C Inverse diode IF Tj = 175 °C IFnom Features • IGBT4 = 4. generation medium fast trench IGBT (Infineon) • CAL4 = Soft switching 4. generation CAL-diode • Isolated copper baseplate using DBC technology (Direct Bonded Copper) • Increased power cycling capability • With integrated gate resistor • For higher switching frequenzies up to 12kHz • UL recognized, file no. E63532 Typical Applications* • AC inverter drives • UPS • Switched reluctance motor Remarks • Case temperature limited to Tc = 125°C max. • Recommended Top = -40 ... +150°C • Product reliability results valid for Tj = 150°C IFRM IFRM = 3xIFnom 2400 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 3520 A -40 ... 175 °C Tj Module It(RMS) Tterminal = 80 °C Tstg Visol AC sinus 50 Hz, t = 1 min 500 A -40 ... 125 °C 4000 V Characteristics Symbol IGBT VCE(sat) VCE0 Conditions IC = 900 A VGE = 15 V chiplevel chiplevel min. typ. max. Unit Tj = 25 °C 1.83 2.08 V Tj = 150 °C 2.23 2.44 V Tj = 25 °C 0.8 0.9 V Tj = 150 °C 0.7 0.8 V Tj = 25 °C 1.14 1.31 mΩ 1.70 1.82 mΩ 5.8 6.5 V 5 mA rCE VGE = 15 V chiplevel VGE(th) VGE=VCE, IC = 32.8 mA ICES VGE = 0 V VCE = 1200 V Cies Coes Cres VCE = 25 V VGE = 0 V QG VGE = - 8 V...+ 15 V RGint Tj = 25 °C VCC = 600 V IC = 900 A VGE = +15/-15 V RG on = 1 Ω RG off = 1 Ω di/dton = 6900 A/µs di/dtoff = 5600 A/µs td(on) tr Eon td(off) tf Eoff Rth(j-c) Tj = 150 °C 5 Tj = 25 °C Tj = 150 °C mA f = 1 MHz 54.4 nF f = 1 MHz 3.52 nF f = 1 MHz 3.00 nF 5000 nC 0.9 Tj = 150 °C Ω 220 ns Tj = 150 °C 112 ns Tj = 150 °C 130 mJ Tj = 150 °C 652 ns Tj = 150 °C 139 ns Tj = 150 °C 121 mJ per IGBT 0.035 K/W GA © by SEMIKRON Rev. 3 – 09.07.2014 1 SKM900GA12E4 Characteristics Symbol Conditions Inverse diode VF = VEC IF = 900 A VGE = 0 V chiplevel VF0 chiplevel rF SEMITRANS® 4 IGBT4 Modules SKM900GA12E4 IRRM Qrr Err Rth(j-c) • IGBT4 = 4. generation medium fast trench IGBT (Infineon) • CAL4 = Soft switching 4. generation CAL-diode • Isolated copper baseplate using DBC technology (Direct Bonded Copper) • Increased power cycling capability • With integrated gate resistor • For higher switching frequenzies up to 12kHz • UL recognized, file no. E63532 typ. max. Unit Tj = 25 °C 2.31 2.65 V Tj = 150 °C 2.31 2.64 V Tj = 25 °C 1.3 1.5 V Tj = 150 °C 0.9 1.1 V Tj = 25 °C 1.1 1.3 mΩ 1.6 1.7 mΩ Tj = 150 °C IF = 900 A Tj = 150 °C di/dtoff = 7900 A/µs T = 150 °C j VGE = ±15 V T j = 150 °C VCC = 600 V per diode 576 A 124 µC 53 mJ 0.07 K/W Module LCE RCC'+EE' Features chiplevel min. 15 terminal-chip Rth(c-s) per module Ms to heat sink M6 Mt to terminals 20 nH TC = 25 °C 0.18 mΩ TC = 125 °C 0.22 mΩ 0.038 K/W 3 0.02 5 Nm M6 2.5 5 Nm M4 1.1 2 Nm 330 g w Typical Applications* • AC inverter drives • UPS • Switched reluctance motor Remarks • Case temperature limited to Tc = 125°C max. • Recommended Top = -40 ... +150°C • Product reliability results valid for Tj = 150°C GA 2 Rev. 3 – 09.07.2014 © by SEMIKRON SKM900GA12E4 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 3 – 09.07.2014 3 SKM900GA12E4 Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE' Fig. 11: CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode peak reverse recovery charge 4 Rev. 3 – 09.07.2014 © by SEMIKRON SKM900GA12E4 SEMITRANS 4 GA This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 3 – 09.07.2014 5