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WFP3205T
Silicon N-Channel MOSFET
Features
■ 109A,60V, RDS(on)(Max 8mΩ)@VGS=10V
■ Ultra-low Gate charge(Typical 50nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s advanced
planar stripe,DMOS technology. This latest technology has
beenespecially designed to minimize on-state resistance ,have
a lowgate charge with superior switching performance ,and
ruggedavalanche characteristics.This Power MOSFET is well
suited for synchronous DC-DC Converters and power
Management inportable and battery operated products.
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Value
Units
Drain Source Voltage
60
V
Continuous Drain Current(@Tc=25℃)
109
A
Continuous Drain Current(@Tc=100℃)
80
A
390
A
±20
V
ID
IDM
Drain Current Pulsed
(Note1)
VGS
Gate to Source Voltage
EAR
Repetitive Avalanche Energy
(Note1)
20
mJ
dv/dt
Peak Diode Recovery dv /dt
(Note3)
5.0
V/ ns
Total Power Dissipation(@Tc=25℃)
150
W
Derating Factor above 25℃
1.0
W/℃
-55~150
℃
300
℃
PD
TJ,Tstg
TL
Junction and Storage Temperature
Channel Temperature
Thermal Characteristics
Symbol
Parameter
Value
Min
Typ
Max
Units
RQJC
Thermal Resistance , Junction -to -Case
-
-
1.0
℃/W
RQCS
Thermal Resistance , Case-to-Sink
-
0.5
-
℃/W
RQJA
Thermal Resistance , Junction-to -Ambient
-
-
62
℃/W
Rev.A Jun.2011
[email protected] Microelectronics Co., Ltd., All right reserved.
WFP3205T
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
IGSS
VGS = ±20 V, VDS = 0 V
-
-
±100
nA
±30
-
-
V
VDS=55V,V GS=0V
-
-
1
µA
VDS=44V,VGS=0V,TJ=125℃
-
-
100
µA
60
-
-
V
-
0.057
-
V/℃
Gate leakage current
Gate-source breakdown voltage
V(BR)GSS
Drain cut -off current
IG=±10 µA,VDS=0V
IDSS
Drain -source breakdown voltage
V(BR)DSS
Breakdown voltage Temperature
△BVDSS/
ID=250 µA,VGS=0V
ID=1mA,
△TJ
Referenced to 25℃
Gate threshold voltage
VGS(th)
VDS=VGS,ID=250 µA
2
-
4
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=55A
-
-
8.0
mΩ
Forward Transconductance
gfs
VDS=25V,ID=55A
44
-
-
S
Input capacitance
Ciss
VDS=25V,
-
3395
-
Reverse transfer capacitance
Crss
VGS=0V,
-
150
-
Output capacitance
Coss
f=1MHz
-
435
-
VDD=28V,
-
43
-
ID=55A
-
14
-
tf
RG=2.5Ω
-
11
-
Td(off)
VGS=10V
-
31
-
-
50
-
21
-
14
Coefficient
Rise time
Turn-in Delay time
tr
Td(on)
pF
Switching time
ns
Fall time
Turn-off Delay time
Total gate charge(gate-source
(Note4,5)
VDD=44V,
Qg
plus gate-drain)
ID=55A
nC
Gate-source charge
Qgs
Gate-drain("miller") Charge
Qgd
VGS=10V,
(Note4,5)
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Continuous drain reverse current
IDR
-
-
-
109
A
Pulse drain reverse current
IDRP
-
-
-
390
A
Forward voltage(diode)
VDSF
IDR=60A,VGS=0V
-
-
1.2
V
Reverse recovery time
trr
IDR=55A,TJ=25℃
-
100
170
ns
Reverse recovery charge
Qrr
dIDR / dt =100 A / µs
-
450
680
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=198uH IAS=55A,,RG=25Ω,Starting TJ=25℃
3.ISD≤55A,di/dt≤290A/us,VDD<BVDSS, TJ≤150℃
4.Pulse Test:Pulse Width≤400us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
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WFP3205T
Fig.1 On State Characteristics
Fig.3 Transfer Characteristics
Fig.5 Capacitance Variation vs
Drain Voltage
Fig.2 On State Characteristics
Fig.4 On-Resistance Variation vs
Junction temperature
Fig.6 Gate Charge Characteristics
Steady, keep you advance
3/7
WFP3205T
Fig.7 Maximum Safe Operation Area
Fig.8 Maximum Drain Current
vs Case temperature
Fig.9 Transient thermal Response Curve
4/7
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WFP3205T
Fig.10 Gate Test circuit & Waveform
Fig.11 Resistive Switching Test Circuit & Waveform
Fig.12 Unclamped Inductive Switching Test Circuit & Waveform
5/7
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WFP3205T
Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform
6/7
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WFP3205T
TO-220 Package Dimension
Unit:mm
7/7
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