Datasheet

AOH3110
100V N-Channel MOSFET
General Description
Product Summary
The AOH3110 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for boost
converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
VDS
100V
1.0A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 700mΩ
RDS(ON) (at VGS=4.5V)
< 820mΩ
SOT223
Top View
D
Bottom View
D
D
G
S
G
D
D
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current G
VGS
TA=25°C
Units
V
±20
V
1
ID
TA=70°C
Maximum
100
A
0.8
Pulsed Drain Current C
IDM
4
Avalanche Current C
IAS
3.5
A
Avalanche energy L=50uH C
TA=25°C
EAS
0.3
mJ
Power Dissipation B
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev 0: Jan. 2012
3.1
PD
TA=70°C
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
W
2
RθJA
RθJL
-55 to 150
Typ
33
60
30
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°C
Max
40
75
40
Units
°C/W
°C/W
°C/W
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AOH3110
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=250µA, VGS=0V
100
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS，ID=250µA
ID(ON)
On state drain current
VGS=10V, VDS=5V
1
TJ=55°C
±100
nA
2.3
2.9
V
585
700
1110
1340
VGS=4.5V, ID=0.75A
635
820
Static Drain-Source On-Resistance
1.7
4
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=0.9A
2.8
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.9
IS
Maximum Body-Diode Continuous Current G
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Units
µA
5
VGS=10V, ID=0.9A
Coss
Max
V
VDS=100V, VGS=0V
IDSS
RDS(ON)
Typ
VGS=0V, VDS=50V, f=1MHz
mΩ
mΩ
S
1.2
V
1
A
100
pF
13
pF
5
pF
5
7.5
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
2.8
6
nC
Qg(4.5V) Total Gate Charge
1.5
3
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=50V, ID=0.9A
2.5
0.4
nC
0.8
nC
5
ns
4
ns
12
ns
5
ns
52
ns
nC
VGS=10V, VDS=50V, RL=50Ω,
RGEN=3Ω
IF=5.6A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge IF=5.6A, dI/dt=100A/µs
60
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The
maximum current rating is package limited.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Jan. 2012
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Page 2 of 5
AOH3110
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
3
10V
6V
VDS=5V
2.5
5V
4.5V
2
ID(A)
ID (A)
3
1.5
3.5V
2
125°C
1
1
25°C
0.5
VGS=3.0V
0
0
0
1
2
3
4
0
5
1200
2
3
4
5
6
Normalized On-Resistance
2.4
1000
VGS=4.5V
800
RDS(ON) (mΩ
Ω)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
600
400
VGS=10V
200
2.2
VGS=10V
ID=0.9A
2
1.8
17
5
2
VGS=4.5V
10
1.6
1.4
1.2
ID=0.75A
1
0.8
0
0
0.5
0
1
1.5
2
2.5
3
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
1500
1.0E+01
ID=0.9A
1.0E+00
1200
40
125°C
125°C
900
IS (A)
RDS(ON) (mΩ
Ω)
1.0E-01
1.0E-02
600
1.0E-03
25°C
25°C
300
1.0E-04
1.0E-05
0
2
6
8
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: Jan. 2012
4
10
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AOH3110
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
160
VDS=50V
ID=0.9A
140
8
Ciss
Capacitance (pF)
VGS (Volts)
120
6
4
100
80
60
Coss
40
Crss
2
20
0
0
0
0.5
1
1.5
2
2.5
Qg (nC)
Figure 7: Gate-Charge Characteristics
3
0
10
20
30
40 50 60 70 80
VDS (Volts)
Figure 8: Capacitance Characteristics
90
100
10000
10.0
TA=25°C
10µs
RDS(ON)
limited
ID (Amps)
1000
100µs
Power (W)
1.0
1ms
10ms
0.1
100
10
TJ(Max)=150°C
TA=25°C
10s
DC
1
0.0
1E-05
0.01
0.1
1
10
VDS (Volts)
100
0.001
0.1
10
1000
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=75°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Jan. 2012
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Page 4 of 5
AOH3110
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s
RL
V ds
Vds
DUT
Vgs
90 %
+
Vdd
VDC
-
Rg
1 0%
Vgs
V gs
t d (o n )
tr
t d (o ff)
to n
tf
t o ff
D iode R ecovery T est C ircuit & W aveform s
Q rr = -
V ds +
Idt
DUT
V gs
V ds -
Isd
V gs
Ig
Rev 0: Jan. 2012
L
Isd
+
VD C
-
IF
t rr
dI/dt
I RM
V dd
V dd
V ds
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Page 5 of 5