AOD11S60/AOI11S60 600V 11A α MOS TM Power Transistor General Description Product Summary The AOD11S60 & AOI11S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS @ Tj,max 700V IDM 45A RDS(ON),max 0.399Ω Qg,typ 11nC Eoss @ 400V 2.7µJ 100% UIS Tested 100% Rg Tested TO252 DPAK Top View TO251A IPAK Bottom View Top View D Bottom View D D G S S G G S S S G AOI11S60 AOD11S60 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G D D VGS TC=25°C TC=100°C Maximum 600 Units V ±30 V 11 ID 8.5 A Pulsed Drain Current C IDM Avalanche Current C IAR 2 A Repetitive avalanche energy C EAR 60 mJ Single pulsed avalanche energy H TC=25°C Power Dissipation B Derate above 25oC MOSFET dv/dt ruggedness Peak diode recovery dv/dt Junction and Storage Temperature Range EAS 120 mJ 45 PD dv/dt TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds K TL Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Symbol RθJA Maximum Case-to-sink A RθCS Maximum Junction-to-CaseD,F RθJC Rev3: Jan 2012 208 W 1.67 100 20 -55 to 150 W/ oC 300 °C V/ns °C Typical Maximum Units 45 55 °C/W -0.45 0.5 0.6 °C/W °C/W www.aosmd.com Page 1 of 7 AOD11S60/AOI11S60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units ID=250µA, VGS=0V, TJ=25°C 600 - - ID=250µA, VGS=0V, TJ=150°C 650 700 - V µA STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VDS=600V, VGS=0V - - 1 VDS=480V, TJ=150°C - 10 - IGSS Gate-Body leakage current VDS=0V, VGS=±30V - - ±100 VGS(th) Gate Threshold Voltage VDS=5V,ID=250µA 2.8 3.5 4.1 nΑ V RDS(ON) Static Drain-Source On-Resistance VSD Diode Forward Voltage IS ISM VGS=10V, ID=3.8A, TJ=25°C - 0.35 0.399 Ω VGS=10V, ID=3.8A, TJ=150°C - 0.98 1.11 Ω IS=5.5A,VGS=0V, TJ=25°C - 0.84 - V Maximum Body-Diode Continuous Current - - 11 A Maximum Body-Diode Pulsed CurrentC - - 45 A DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Co(er) Effective output capacitance, energy related I Crss Effective output capacitance, time related J Reverse Transfer Capacitance Rg Gate resistance Co(tr) - 545 - pF - 37.3 - pF - 30.8 - pF - 93.6 - pF VGS=0V, VDS=100V, f=1MHz - 1.42 - pF VGS=0V, VDS=0V, f=1MHz - 16.5 - Ω VGS=0V, VDS=100V, f=1MHz VGS=0V, VDS=0 to 480V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg - 11 - nC - 2.8 - nC Gate Drain Charge - 3.8 - nC Turn-On DelayTime - 20 - ns - 20 - ns - 59 - ns - 20 - ns Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time VGS=10V, VDS=480V, ID=5.5A VGS=10V, VDS=400V, ID=5.5A, RG=25Ω Body Diode Reverse Recovery Time Peak Reverse Recovery Current IF=5.5A,dI/dt=100A/µs,VDS=400V - 250 - ns Irm IF=5.5A,dI/dt=100A/µs,VDS=400V - 21 - Qrr Body Diode Reverse Recovery Charge IF=5.5A,dI/dt=100A/µs,VDS=400V - 3.3 - A µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. H. L=60mH, IAS=2A, VDD=150V, Starting TJ=25°C I. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS. J. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS. K. Wave soldering only allowed at leads. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev3: Jan 2012 www.aosmd.com Page 2 of 7 AOD11S60/AOI11S60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 16 24 10V 10V 20 7V 12 7V 12 6V 8 5.5V 4 5V 6V ID (A) ID (A) 16 8 5.5V 4 5V VGS=4.5V VGS=4.5V 0 0 0 5 10 15 0 20 5 10 15 20 VDS (Volts) Figure 2: On-Region Characteristics@125°C VDS (Volts) Figure 1: On-Region Characteristics@25°C 100 1.2 -55°C VDS=20V 10 0.9 RDS(ON) (Ω ) ID(A) 125°C 1 25°C VGS=10V 0.6 0.3 0.1 0.0 0.01 2 4 6 8 0 10 10 15 20 25 ID (A) Figure 4: On-Resistance vs. Drain Current and Gate Voltage VGS(Volts) Figure 3: Transfer Characteristics 1.2 3 2.5 VGS=10V ID=3.8A BVDSS (Normalized) Normalized On-Resistance 5 2 1.5 1 1.1 1 0.9 0.5 0 -100 -50 0 50 100 150 200 Temperature (°C) Figure 5: On-Resistance vs. Junction Temperature Rev3: Jan 2012 www.aosmd.com 0.8 -100 -50 0 50 100 150 200 TJ (oC) Figure 6: Break Down vs. Junction Temperature Page 3 of 7 AOD11S60/AOI11S60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 1.0E+02 1.0E+01 125°C 12 VDS=480V ID=5.5A 25°C 1.0E-01 9 VGS (Volts) IS (A) 1.0E+00 1.0E-02 6 1.0E-03 3 1.0E-04 1.0E-05 0 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 7: Body-Diode Characteristics (Note E) 0 8 12 16 Qg (nC) Figure 8: Gate-Charge Characteristics 10000 6 5 Ciss 1000 Eoss(uJ) Capacitance (pF) 4 100 Eoss 4 3 Coss 2 10 1 Crss 0 1 0 100 200 300 400 500 VDS (Volts) Figure 9: Capacitance Characteristics 0 600 100 200 300 400 VDS (Volts) Figure 10: Coss stored Energy 500 600 800 RDS(ON) limited 10µs 100µs 1 DC 1ms TJ(Max)=150°C TC=25°C 600 Power (W) 10 ID (Amps) 100 400 10ms 200 0.1 TJ(Max)=150°C TC=25°C 0.01 1 10 100 1000 0 0.0001 VDS (Volts) Figure 11: Maximum Forward Biased Safe Operating Area (Note F) Rev3: Jan 2012 www.aosmd.com 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 12: Single Pulse Power Rating Junction-toCase (Note F) Page 4 of 7 AOD11S60/AOI11S60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.6°C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse PD 0.1 Ton 0.01 T Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 13: Normalized Maximum Transient Thermal Impedance (Note F) 120 12 Current rating ID(A) EAS(mJ) 90 60 30 0 9 6 3 0 25 75 100 125 TCASE (°C) Figure 14: Avalanche energy Rev3: Jan 2012 50 150 175 www.aosmd.com 0 25 50 75 100 125 TCASE (°C) Figure 15: Current De-rating (Note B) 150 Page 5 of 7 AOD11S60/AOI11S60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 400 TA=25°C Power (W) 300 200 100 0 0.01 0.1 1 10 100 Pulse Width (s) Figure 16: Single Pulse Power Rating Junction-to-Ambient (Note G) 1000 Zθ JA Normalized Transient Thermal Resistance 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=55°C/W 0.1 0.01 PD 0.001 Ton Single Pulse 0.0001 0.001 0.01 0.1 T 1 10 100 1000 10000 Pulse Width (s) Figure 17: Normalized Maximum Transient Thermal Impedance (Note G) Rev3: Jan 2012 www.aosmd.com Page 6 of 7 AOD11S60/AOI11S60 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev3: Jan 2012 L Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.aosmd.com Page 7 of 7