Down

WFF640
on N-C
hann
el MOS
FET
Silic
Silico
N-Ch
nnel
MOSF
Features
■ 18A,200V.RDS(on)(Max 0 . 1 8Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical 16nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Isolation Voltage ( VISO = 4000V AC )
■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s advanced Planar
stripe, DMOS technology. This latest technology has been especially
designed to minimize on-state resistance, have a high rugged
avalanche characteristics. This devices is specially well suited for
G
D
low voltage applications such as automotive, high efficiency
TO220F
S
switching for DC/DC converters, and DC motor control.
Absolute Maximum Ratings
Symbol
VDSS
ID
Value
Units
Drain Source Voltage
Parameter
200
V
Continuous Drain Current(@Tc=25℃)
18*
A
12*
A
72*
A
±30
V
Continuous Drain Current(@Tc=100℃)
IDM
Drain Current Pulsed
VGS
Gate to Source Voltage
(Note1)
EAS
Single Pulsed Avalanche Energy
(Note 2)
258
mJ
EAR
Repetitive Avalanche Energy
(Note 1)
13
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
5.5
V/ns
Total Power Dissipation(@Tc=25℃)
PD
TJ, Tstg
TL
44
W
0.35
W/℃
-55~150
℃
300
℃
Derating Factor above 25℃
Junction and Storage Temperature
Channel Temperature
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
Min
Value
Typ
Max
Units
RQJC
Thermal Resistance, Junction-to-Case
-
-
2.85
℃/W
RQCS
Thermal Resistance, Case to Sink
-
0.5
-
℃/W
RQJA
Thermal Resistance, Junction-to-Ambient
-
-
62.5
℃/W
Rev.A Jun.2010
[email protected] Microelectronics Co., Ltd., All right reserved.
WFF640
Electrical Characteristics (Tc = 25°C)
Characteristics
Gate leakage current
Symbol
Test Condition
Min
Type
Max
Unit
IGSS
VGS = ±30 V, VDS = 0 V
-
-
±100
nA
V(BR)GSS
IG = ±10 μA, VDS = 0 V
±30
-
-
V
IDSS
VDS = 200 V, VGS = 0 V
-
-
10
μA
V(BR)DSS
ID = 250 μA, VGS = 0 V
200
-
-
V
Gate threshold voltage
VGS(th)
VDS = 10 V, ID =250 μA
2
-
4
V
Drain−source ON resistance
RDS(ON)
VGS = 10 V, ID = 9A
-
-
0.18
Ω
Forward Transconductance
gfs
VDS = 50 V, ID =9A
6.7
-
-
S
Input capacitance
Ciss
VDS = 25 V,
-
1300
1760
Reverse transfer capacitance
Crss
VGS = 0 V,
-
-
65
Output capacitance
Coss
f = 1 MHz
-
-
245
tr
VDD =100 V,
-
54
-
ton
ID = 18 A
-
104
-
tf
RG=25 Ω
-
327
-
-
108
-
-
-
70
-
8
13
-
22
39
Gate−source breakdown voltage
Drain cut−off current
Drain−source breakdown voltage
Rise time
Turn−on time
Switching time
pF
ns
Fall time
Turn−off time
Total gate charge (gate−source
plus gate−drain)
(Note4,5)
toff
Qg
VDD = 160 V,
VGS = 10 V,
Gate−source charge
Qgs
Gate−drain (“miller”) Charge
Qgd
ID = 18A
(Note4,5)
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Continuous drain reverse current
IDR
-
-
-
18
A
Pulse drain reverse current
IDRP
-
-
-
72
A
Forward voltage (diode)
VDSF
IDR = 18 A, VGS = 0 V
-
1.4
1.5
V
Reverse recovery time
trr
IDR = 18A, VGS = 0 V,
-
195
-
ns
Reverse recovery charge
Qrr
dIDR / dt = 100 A / μs
-
1.48
-
μC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=18.5mH,IAS=18A,VDD=50V,RG=0Ω,Starting TJ=25℃
3.ISD≤18A,di/dt≤300A/us, VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2%
5.Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, keep you advance
WFF640
Fig. 1 On-State Characteristics
Fig.3 On-Resistance Variation vs
Drain Current
Fig.5 On-Resistance Variation vs
Junction Temperature
Fig.2 Transfer
Characteristics
Fig.4 Maximum Avalanche
Energy vs On-State Current
Fig.6 Gate Charge Characteristics
3/7
Steady, keep you advance
WFF640
Fig.7 Maximum Safe Operation Area
Fig.8 Maximum Drain Current vs
Case Temperature
Fig.9 Transient Thermal Response Curve
4/7
Steady, keep you advance
WFF640
Fig.10 Gate Test Circuit & Waveform
Fig.11 Resistive Switching Test Circuit & Waveform
Fig.12 Unclamped Inductive Switching Test Circuit & Waveform
5/7
Steady, keep you advance
WFF640
Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform
6/7
Steady, keep you advance
WFF640
TO-220F Package Dimension
Unit: mm
7/7
Steady, keep you advance