Down

P73
0
WF
WFP
730
annel MOS
FET
Silicon N-Ch
Cha
OSF
Features
■5.5A,400V, RDS(on)(Max 1.0Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical 32nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
rip
General Desc
scrip
ripttion
Th i s Po w e r MOS F ET is pr o d uc e d usi n g Wi n se m i ’ s ad va n ce d
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugg ed ava lan ch e cha racteristics. This devices is spe cially well
suited for high efficiency switch model power supplies, power factor
correction and half bridge and full bridge resonant topology line a
electronic lamp ballast.
ngs
Absolute Max
axiimum Rati
tin
Symbol
VDSS
Param ete
terr
Value
Units
Drain Source Voltage
400
V
Continuous Drain Current(@Tc=25℃)
5.5
A
Continuous Drain Current(@Tc=100℃)
2.9
A
22
A
±30
V
ID
IDM
Drain Current Pulsed
(Note1)
V GS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
330
mJ
E AR
Repetitive Avalanche Energy
(Note 1)
7.4
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4
V/ns
74
W
0.59
W/℃
-55~150
℃
300
℃
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ, Tstg
TL
Junction and Storage Temperature
Channel Temperature
mite
d by jun
ct
*Drain current li
lim
ted
unct
ctiion temp erature
al Ch
arac
stics
Therm
rmal
Cha
actteri
ris
Value
Symb ol
Param ete
terr
U nit s
Min
T yp
Max
R QJC
Thermal Resistance, Junction-to-Case
-
-
1.7
℃/W
R QCS
Thermal Resistance, Case-to-Sink
-
0.5
-
℃/W
R QJA
Thermal Resistance, Junction-to-Ambient
-
-
62.5
℃/W
Rev.C Nov.2008
[email protected] Microelectronics Co., Ltd., All right reserved.
P73
0
WF
WFP
730
arac
C)
Elec
ecttrical Ch
Cha
actteristics (Tc = 25°C
Characteristics
Gate leakage current
Gate−source breakdown voltage
Drain cut−off current
Drain−source breakdown voltage
Break Voltage Temperature
Coefficient
Symbol
Min
Type
Max
Unit
IGSS
VGS = ±30 V, VDS = 0 V
-
-
±100
nA
V(BR)GSS
IG = ±10 μA, VDS = 0 V
±30
-
-
V
IDSS
VDS = 400 V, VGS = 0 V
-
-
1
μA
V(BR)DSS
ID = 250 μA, VGS = 0 V
400
-
-
V
-
0.4
-
V/℃
ΔBVDSS/
ΔTJ
Test Condition
ID=250μA,
Referenced
to
25℃
Gate threshold voltage
VGS(th)
VDS = 10 V, ID =250 μA
2
-
4
V
Drain−source ON resistance
RDS(ON)
VGS = 10 V, ID = 2.75A
-
0.83
1
Ω
Forward Transconductance
gfs
VDS = 50 V, ID = 2.75A
-
4.5
-
S
Input capacitance
C iss
VDS = 25 V,
-
550
720
Reverse transfer capacitance
C rss
VGS = 0 V,
-
23
30
Output capacitance
C oss
f = 1 MHz
-
85
110
VDD =200 V,
-
15
40
ton
ID =3.5A
-
55
120
tf
RG=25Ω
-
85
180
-
50
110
-
32
38
-
4.3
5.7
-
14
22
pF
Rise time
Turn−on time
Fall time
tr
ns
Switching time
Turn−off time
Total gate charge (gate−source
(Note4,5)
toff
Qg
plus gate−drain)
VDD = 320 V,
VGS = 10 V,
Gate−source charge
Qgs
Gate−drain (“miller”) Charge
Qgd
ID = 3.5 A
(Note4,5)
nC
s and Ch
arac
C)
Sou
Sourrce−Drain Rating
ings
Cha
actteristics (Ta = 25°C
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Continuous drain reverse current
IDR
-
-
-
5.5
A
Pulse drain reverse current
IDRP
-
-
-
22
A
Forward voltage (diode)
VDSF
IDR = 5.5 A, VGS = 0 V
-
1.4
1.5
V
Reverse recovery time
trr
IDR = 5.5 A, VGS = 0 V,
-
265
530
ns
Reverse recovery charge
Qrr
dIDR / dt = 100 A / μs
-
2.32
-
μC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=18.5mH,IAS=5.5A,VDD =50V,RG=25Ω,Starting TJ=25℃
3.ISD≤5.5A,di/dt≤300A/us, VDD<BVDSS,STARTING T J=25℃
4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2%
5.Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, keep you advance
P73
0
WF
WFP
730
3/7
Steady, keep you advance
P73
0
WF
WFP
730
4/7
Steady, keep you advance
P73
0
WF
WFP
730
10 Gate Tes
cuit & Waveform
Fig.
Fig.1
estt Cir
Circ
11 Res
e Swit
ching Tes
cuit & Waveform
Fig.
Fig.1
esiistiv
ive
itc
estt Cir
Circ
12 Un
clamped In
ducti
ve Switchi
ng Test Cir
cuit & Waveform
Fig.
Fig.1
Unc
Ind
tiv
hin
Circ
5/7
Steady, keep you advance
P73
0
WF
WFP
730
13 Pea
k Diode Rec
overy dv/dt Test Cir
cuit & Waveform
Fig.
Fig.1
eak
eco
Circ
6/7
Steady, keep you advance
P73
0
WF
WFP
730
ckage Dim
ension
TO
TO--220 Pa
Pac
Dime
Unit: mm
7/7
Steady, keep you advance