HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 20A, 400V and 500V JEDEC TO-218AC • VCE(ON) 2.5V Max. EMITTER COLLECTOR (FLANGE) • TFALL 1µs, 0.5µs COLLECTOR GATE • Low On-State Voltage • Fast Switching Speeds • High Input Impedance • Anti-Parallel Diode Terminal Diagram Applications N-CHANNEL ENHANCEMENT MODE • Power Supplies C • Motor Drives • Protective Circuits G Description E The HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, and HGTH20N50E1D are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. They feature a discrete antiparallel diode that shunts current around the IGBT in the reverse direction without introducing carriers into the depletion region. These types can be operated directly from low power integrated circuits. PACKAGING AVAILABILITY PART NUMBER PACKAGE BRAND HGTH20N40C1D TO-218AC G20N40C1D HGTH20N40E1D TO-218AC G20N40E1D HGTH20N50C1D TO-218AC G20N50C1D HGTH20N50E1D TO-218AC G20N50E1D NOTE: When ordering, use the entire part number. Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCES Collector-Gate Voltage RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCGR Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGE Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM Diode Forward Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . IF25 at TJ = +90oC. . . . . . . . . . . . . . . . . . . . . . IF90 Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . TJ, TSTG HGTH20N40C1D HGTH20N40E1D 400 400 ±20 20 35 35 20 100 0.8 -55 to +150 HGTH20N50C1D HGTH20N50E1D 500 500 ±20 20 35 35 20 100 0.8 -55 to +150 UNITS V V V A A A A W W/oC oC INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,587,713 4,641,162 4,794,432 4,860,080 4,969,027 4,417,385 4,598,461 4,644,637 4,801,986 4,883,767 4,430,792 4,605,948 4,682,195 4,803,533 4,888,627 4,443,931 4,618,872 4,684,413 4,809,045 4,890,143 4,466,176 4,620,211 4,694,313 4,809,047 4,901,127 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 3-76 4,516,143 4,631,564 4,717,679 4,810,665 4,904,609 4,532,534 4,639,754 4,743,952 4,823,176 4,933,740 4,567,641 4,639,762 4,783,690 4,837,606 4,963,951 File Number 2271.4 Specifications HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D Electrical Specifications TC = +25oC, Unless Otherwise Specified LIMITS HGTH20N40C1D, HGTH20N40E1D PARAMETERS SYMBOL TEST CONDITIONS HGTH20N50C1D, HGTH20N50E1D MIN MAX MIN MAX UNITS Collector-Emitter Breakdown Voltage BVCES IC = 1mA, VGE = 0 400 - 500 - V Gate Threshold Voltage VGE(TH) VGE = VCE, IC = 1mA 2.0 4.5 2.0 4.5 V VCE = 400V, TC = +25oC - 250 - - µA VCE = 500V, TC = +25oC - - - 250 µA VCE = 400V, TC = +125oC - 1000 - - µA VCE = 500V, TC = +125oC - - - 1000 µA IGES VGE = ±20V, VCE = 0 - 100 - 100 nA VCE(ON) IC = 20A, VGE = 10V - 2.5 - 2.5 V IC = 35A, VGE = 20V - 3.2 - 3.2 V VGEP IC = 10A, VCE = 10V - 6 (Typ) - 6 (Typ) V On-State Gate Charge QG(ON) IC = 10A, VCE = 10V - 33 (Typ) - 33 (Typ) nC Turn-On Delay Time tD(ON)I IC = 20A, VCE(CLP) = 300V, L = 25µH, TJ = +100oC, VGE = 10V, RG = 25Ω - 50 - 50 ns - 50 - 50 ns - 400 - 400 ns 40E1D, 50E1D 680 (Typ) 1000 680 (Typ) 1000 ns 40C1D, 50C1D 400 (Typ) 500 400 (Typ) 500 ns Zero Gate Voltage Collector Current Gate-Emitter Leakage Current Collector-Emitter On Voltage Gate-Emitter Plateau Voltage Rise Time Turn-Off Delay Time Fall Time Turn-Off Energy Loss per Cycle (Off Switching Dissipation = WOFF x Frequency) ICES tRI tD(OFF)I tFI WOFF IC = 20A, VCE(CLP) = 300V, L = 25µH, TJ = +100oC, VGE = 10V, RG = 25Ω 40E1D, 50E1D 1810 (Typ) µJ 40C1D, 50C1D 1070 (Typ) µJ Thermal Resistance Junction-to-Case RθJC Diode Forward Voltage VEC Diode Reverse Recovery Time tRR - 1.25 - 1.25 oC/W IEC = 20A - 2 - 2 V IEC = 20A, dIEC/dt = 100A/µs - 100 - 100 ns 3-77 HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D Typical Performance Curves 40 VGE = 10V, RGEN = RGS = 50Ω RATED POWER DISSIPATION (%) ICE, COLLECTOR CURRENT (A) 35 30 25 20 15 10 100 80 60 40 20 5 0 -75 -50 -25 0 +25 0 +50 +75 +100 +125 +150 +175 TJ , JUNCTION TEMPERATURE (oC) +75 +100 +125 +150 (oC) FIGURE 2. POWER DISSIPATION vs TEMPERATURE DERATING CURVE 35 VCE = 10V, PULSE TEST PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VGE = VCE, IC = 1mA 1.3 ICE, COLLECTOR CURRENT (A) NORMALIZED GATE THRESHOLD VOLTAGE (V) +50 TC , CASE TEMPERATURE FIGURE 1. MAX. SWITCHING CURRENT LEVEL. RG = 50Ω, VGE = 0V ARE THE MIN. ALLOWABLE VALUES 1.2 1.1 1.0 0.9 0.8 0.7 -50 30 25 20 15 +25oC 10 +125oC 5 -40oC 0 0 +50 +100 +150 TJ, JUNCTION TEMPERATURE (oC) FIGURE 3. TYPICAL NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE VGE = 20V 35 VGE = 10V VGE = 8V 25 VGE = 7V 20 VGE = 6V 15 VGE = 5V 10 10 VGE = 10V, PULSE TEST TC = +25oC ICE, COLLECTOR CURRENT (A) 30 2.5 5.0 7.5 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 4. TYPICAL TRANSFER CHARACTERISTICS 35 ICE, COLLECTOR CURRENT (A) +25 VGE = 4V 5 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 30 25 +25oC 20 15 10 5 0 1 2 3 4 0 5 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 5. TYPICAL SATURATION CHARACTERISTICS 1 2 3 VCE(ON), COLLECTOR-TO-EMITTER ON VOLTAGE (V) 4 FIGURE 6. TYPICAL COLLECTOR-TO-EMITTER ON-VOLTAGE vs COLLECTOR CURRENT 3-78 HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D Typical Performance Curves (Continued) VCE(ON), COLLECTOR-EMITTER VOLTAGE (V) 2700 f = 0.1MHz C, CAPACITANCE (pF) 2250 1800 1350 CISS 900 COSS 450 CRSS 0 10 20 30 40 50 3.00 2.75 IC = 20A, VGE = 10V 2.50 IC = 20A, VGE = 15V 2.25 2.00 IC = 10A, VGE = 10V 1.75 1.50 +25 IC = 10A, VGE = 15V +50 +75 FIGURE 7. CAPACITANCE vs COLLECTOR-TO-EMITTER VOLTAGE +125 +150 FIGURE 8. TYPICAL VCE(ON) vs TEMPERATURE 400 WOFF = ∫ IC * VCEdt IC = 20A, VGE = 10V, VCE(CLP) = 300V L = 25µH, RG = 25Ω tD(OFF)I , TURN OFF DELAY TIME (ns) +100 TJ , JUNCTION TEMPERATURE (oC) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VGE IC 300 VCE 200 100 0 +25 +50 +75 +100 +125 +150 TJ , JUNCTION TEMPERATURE (oC) FIGURE 9. TYPICAL TURN-OFF DELAY TIME FIGURE 10. TYPICAL INDUCTIVE SWITCHING WAVEFORMS 800 800 700 L = 25µH, RG = 25Ω 600 600 40E1D/50E1D tFI , FALL TIME (ns) tFI , FALL TIME (ns) IC = 20A, VGE = 10V, VCE(CLP) = 300V L = 25µH, RG = 25Ω IC = 10A, VGE = 10V, VCE(CLP) = 300V 700 500 400 40C1D/50C1D 300 200 100 40E1D/50E1D 500 400 40C1D/50C1D 300 200 100 0 +25 +50 +75 +100 +125 0 +25 +150 +50 +75 +100 +125 TJ , JUNCTION TEMPERATURE (oC) TJ , JUNCTION TEMPERATURE (oC) FIGURE 11. TYPICAL FALL TIME (IC = 10A) FIGURE 12. TYPICAL FALL TIME (IC = 20A) 3-79 +150 HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D Typical Performance Curves (Continued) VGE = 10V, VCE(CLP) = 300V L = 25µH, RG = 25Ω 800 700 20A, 40E1D/50E1D 600 20A, 40C1D/50C1D 500 400 10A, 40E1D/50E1D 300 200 10A, 40C1D/50C1D 100 10 500 VCC = BVCES 375 +25 +50 VCC = 0.25 BVCES +75 +100 +125 125 2 COLLECTOR-EMITTER VOLTAGE 0 IG(REF) IG(REF) +150 80 TIME (µs) IG(ACT) IG(ACT) NOTE: For Turn-Off gate currents in excess of 3mA. VCE Turn-Off is not accurately represented by this normalization. FIGURE 13. TYPICAL CLAMPED INDUCTIVE TURN-OFF SWITCHING LOSS/CYCLE FIGURE 14. NORMALIZED SWITCHING WAVEFORMS AT CONSTANT GATE CURRENT (REFER TO APPLICATION NOTES AN7254 AND AN7260) 100 TYPICAL REVERSE RECOVERY TIME 10 tRR , REVERSE RECOVERY TIME (ns) IEC , EMITTER COLLECTOR CURRENT (A) 4 RL = 25Ω IG(REF) = 0.76mA VGE = 10V 20 TJ , JUNCTION TEMPERATURE (oC) 6 250 0 0 8 GATE EMITTER VOLTAGE VGE, GATE-EMITTER VOLTAGE (V) 900 VCE, COLLECTOR-EMITTER VOLTAGE (V) WOFF , TURN-OFF ENERGY LOSS (µJ) 1000 TJ = +150oC TJ = +100oC 1.0 TJ = +25oC TJ = -50oC 60 50 40 dIEC/dt ≥ 100A/µs 30 VR = 30V, TJ = +25oC 20 10 0.1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 2 VEC , EMITTER-COLLECTOR VOLTAGE (V) 4 6 8 10 FIGURE 15. TYPICAL DIODE EMITTER-COLLECTOR VOLTAGE vs CURRENT 14 16 18 20 FIGURE 16. TYPICAL DIODE REVERSE RECOVERY TIME Test Circuit RL = 4Ω L = 25µH VCC 1/RG = 1/RGEN + 1/RGE RGEN = 50Ω VCE(CLP) = 300V 20V 0V 12 IEC , EMITTER-COLLECTOR CURRENT (A) RGE = 50Ω FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT 3-80 100V HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 3-81 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029