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P18N50
WF
WFP
Silicon N-Channel MOSFET
Features
�
18A,500V,RDS(on)(Max0.27Ω)@VGS=10V
�
Ultra-low Gate charge(Typical 42nC)
�
Fast Switching Capability
�
100%Avalanche Tested
�
Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advancedplanar
stripe,VDMOS technology.this latest technology has beenespecially
designed to minimize on-state resistance, have a high rugged avalanche
characteristics .This devices is specially wellsuited for AC-DC switching
power supplies, DC-DC powerConverters high voltage H-bridge motor
drive PWM
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Value
Units
Drain Source Voltage
500
V
Continuous Drain Current(@Tc=25℃)
18
A
Continuous Drain Current(@Tc=100℃)
12.7
A
80
A
±30
V
ID
IDM
Drain Current Pulsed
(Note1)
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note2)
330
mJ
EAR
Repetitive Avalanche Energy
(Note1)
27.7
mJ
dv/dt
Peak Diode Recovery dv /dt
(Note3)
4.5
V/ ns
Total Power Dissipation(@Tc=25℃)
208
W
Derating Factor above 25℃
1.67
W/℃
-55~150
℃
300
℃
PD
TJ,Tstg
TL
Junction and Storage Temperature
Channel Temperature
Thermal Characteristics
Symbol
Parameter
Value
Min
Typ
Max
Units
RQJC
Thermal Resistance , Junction -to -Case
-
-
0.6
℃/W
RQCS
Thermal Resistance , Case-to-Sink
-
0.5
-
℃/W
RQJA
Thermal Resistance , Junction-to -Ambient
-
-
62.5
℃/W
Rev.A Jun.2011
[email protected] Microelectronics Co., Ltd., All right reserved.
P18N50
WF
WFP
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Gate leakage current
Test Condition
Min
Type
Max
Unit
IGSS
VGS=±25V,VDS=0V
-
-
±10
nA
V(BR)GSS
IG=±10 µA,VDS=0V
±30
-
-
V
IDSS
VDS=500V,VGS=0V
-
-
100
µA
Drain -source breakdown voltage
V(BR)DSS
ID=10 mA,VGS=0V
500
-
-
V
Breakdown voltage Temperature
△BVDSS/
-
0.5
-
V/℃
Gate-source breakdown voltage
Drain cut -off current
ID=250µA,Referenced
coefficient
△TJ
to 25℃
Gate threshold voltage
VGS(th)
VDS=10V,ID=1mA
3
-
5
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=9A
-
0.235
0.27
Ω
Forward Transconductance
gfs
VDS=40V,ID=9A
-
16
-
S
Input capacitance
Ciss
VDS=25V,
-
2530
3290
Reverse transfer capacitance
Crss
VGS=0V,
-
11
14.3
Output capacitance
Coss
f=1MHz
-
300
390
VDD=250V,
-
40
90
ton
ID=18A
-
150
310
tf
RG=25Ω
-
95
200
-
110
230
-
42
55
-
12
-
-
14
-
Min
Type
Max
Unit
Rise time
tr
Turn-on time
Switching time
Fall time
Turn-off time
ns
(Note4,5)
toff
Total gate charge(gate-source
pF
VDD=400V,
Qg
plus gate-drain)
VGS=10V,
Gate-source charge
Qgs
Gate-drain("miller") Charge
Qgd
nC
ID=18A
(Note4,5)
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Continuous drain reverse current
IDR
-
-
-
18
A
Pulse drain reverse current
IDRP
-
-
-
72
A
Forward voltage(diode)
VDSF
IDR=18A,VGS=0V
-
-
1.4
V
Reverse recovery time
trr
IDR=18A,VGS=0V,
-
500
-
ns
Reverse recovery charge
Qrr
dIDR / dt =100 A / µs
-
5.4
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=5.2mH IAS=18A,VDD=50V,RG=25Ω,Starting TJ=25℃
3.ISD≤18A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, keep you advance
P18N50
WF
WFP
Fig.1 On State Characteristics
Fig.3 On-Resistance Variation vs
Drain Current
Fig.5 Capacitance Characteristics
Fig.2 Transfer Current Characteristics
Fig.4 Body Diode Forward Voltage
Variation with Source Currentand
Temperature
Fig.6 Gate Charge Characteristics
3/7
Steady, keep you advance
P18N50
WF
WFP
Fig.7 Breakdown Voltage Variation
Fig.8 On-Resistance Variation
vs.Temperature
Fig.9 Maximum Safe Operation Area
Fig.10 Maximum Drain Current
vs Case Temperature
Fig.11 Transient Thermal Response Curve
4/7
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P18N50
WF
WFP
Fig.12 Gate Test Circuit & Waveform
Fig.13 Resistive Switching Test Circuit & Waveform
Fig.14 Unclamped Inductive Switching Test Circuit & Waveform
5/7
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P18N50
WF
WFP
Fig.15 Peak Diode Recovery dv/dt Test Circuit & Waveform
6/7
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P18N50
WF
WFP
TO220 Package Dimension
TO-220
Unit:mm
7/7
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