Datasheet

AOD4146/AOI4146
30V N-Channel MOSFET
SDMOS TM
General Description
Product Summary
The AOD4146/AOI4146 is fabricated with SDMOSTM
trench technology that combines excellent RDS(ON) with low
gate charge.The result is outstanding efficiency with
controlled switching behavior. This universal technology is
well suited for PWM, load switching and general purpose
applications.
VDS
ID (at VGS=10V)
30V
55A
RDS(ON) (at VGS=10V)
< 5.6mΩ
RDS(ON) (at VGS = 4.5V)
< 9.5mΩ
100% UIS Tested
100% Rg Tested
TO252
DPAK
TopView
TO-251A
IPAK
Bottom View
D
Top View
Bottom View
D
G
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
C
Units
V
±20
V
A
190
15
IDSM
TA=70°C
Maximum
30
43
IDM
TA=25°C
Continuous Drain
Current
S
D
55
ID
TC=100°C
G
D
A
12
Avalanche Current C
IAS, IAR
50
A
Avalanche energy L=0.05mH C
TC=25°C
EAS, EAR
63
mJ
Power Dissipation
B
TC=100°C
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev 1: June 2009
2.5
Steady-State
Steady-State
RθJA
RθJC
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W
1.6
TJ, TSTG
Symbol
t ≤ 10s
W
31
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
62
PD
-55 to 175
Typ
15
41
2
°C
Max
20
50
2.4
Units
°C/W
°C/W
°C/W
Page 1 of 7
AOD4146/AOI4146
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Min
Conditions
ID=250µA, VGS=0V
Typ
Max
30
V
VDS=30V, VGS=0V
100
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.6
ID(ON)
On state drain current
VGS=10V, VDS=5V
190
TJ=55°C
500
VDS=0V, VGS= ±20V
100
VGS=10V, ID=20A
2.1
3
nA
V
4.7
5.6
7.4
8.9
VGS=4.5V, ID=10A
7.9
9.5
VDS=5V, ID=20A
50
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
µA
A
RDS(ON)
TJ=125°C
Units
mΩ
mΩ
S
1
V
55
A
1630
2037
2440
pF
260
375
490
pF
130
220
300
pF
0.5
1.1
1.7
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
28
35
42
nC
Qg(4.5V) Total Gate Charge
13
16
20
nC
6.8
8.6
10
nC
4.6
6.4
nC
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=20A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
8
10
12
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
12
15
18
2.8
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
8.8
ns
26
ns
23
ns
6
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1: June 2009
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Page 2 of 7
AOD4146/AOI4146
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
5V
10V
VDS=5V
80
80
4.5V
6V
60
60
ID(A)
ID (A)
7V
4V
40
40
20
20
125°C
VGS=3.5V
0
0
0
1
2
3
4
0
5
1
2
3
4
5
6
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
15
Normalized On-Resistance
2
12
RDS(ON) (mΩ
Ω)
25°C
VGS=4.5V
9
6
VGS=10V
3
1.8
VGS=10V
ID=20A
1.6
17
5
2
10
=4.5V
1.4
1.2
VGS
ID=20A
1
0.8
0
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
200
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
1.0E+02
20
ID=20A
1.0E+01
16
40
125°C
12
IS (A)
RDS(ON) (mΩ
Ω)
1.0E+00
125°C
8
1.0E-01
25°C
1.0E-02
1.0E-03
4
25°C
1.0E-04
1.0E-05
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 1: June 2009
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 7
AOD4146/AOI4146
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
3000
VDS=15V
ID=20A
8
2500
Capacitance (pF)
VGS (Volts)
Ciss
6
4
2
2000
1500
1000
Coss
500
Crss
0
0
0
5
10
15
20
25
30
35
Qg (nC)
Figure 7: Gate-Charge Characteristics
40
0
10µs
100.0
RDS(ON)
10µs
100µs
10.0
1ms
10ms
DC
1.0
TJ(Max)=175°C
TC=25°C
0.1
TJ(Max)=175°C
TC=25°C
160
Power (W)
ID (Amps)
25
200
1000.0
17
5
2
10
120
80
40
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
10
0.001
0.01
0.1
1
0
10
Pulse Width (s)
18Junction-toFigure 10: Single Pulse Power Rating
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
5
10
15
20
VDS (Volts)
Figure 8: Capacitance Characteristics
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
40
RθJC=2.4°C/W
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 1: June 2009
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Page 4 of 7
AOD4146/AOI4146
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
IAR (A) Peak Avalanche Current
TA=25°C
Power Dissipation (W)
TA=100°C
TA=150°C
TA=125°C
40
20
0
10
0.000001
0.00001
0.0001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche
capability (Note C)
0
0.001
25
50
75
100
125
150
TCASE (°C)
Figure 13: Power De-rating (Note F)
60
100000
50
10000
TA=25°C
1000
17
5
2
10
40
Power (W)
Current rating ID(A)
60
30
100
20
175
10
10
1
0
0.00001
0
Zθ JA Normalized Transient
Thermal Resistance
10
1
25
50
75
100
125
150
TCASE (°C)
Figure 14: Current De-rating (Note F)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
0.001
0.1
10
1000
0
18
175
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=50°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 1: June 2009
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Page 5 of 7
AOD4146/AOI4146
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
12
di/dt=800A/µs
25
16
3
14
10
di/dt=800A/µs
2.5
12
6
25ºC
10
125ºC
trr (ns)
8
125ºC
2
25ºC
0
10
15
20
25
0
30
0
0
IS (A)
Figure 17: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
10
20
5
10
15
20
25
30
IS (A)
Figure 18: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
15
2.5
Is=20A
Is=20A
8
125ºC
15
12
2
125ºC
25ºC
6
10
Qrr
4
trr (ns)
trr
Irm (A)
Qrr (nC)
0.5
25ºC
2
0
5
1
S
4
5
1.5
25ºC
6
4
Irm
0
trr
9
1.5
25ºC
6
S
15
2
125ºC
10
S
8
125ºC
Qrr
Irm (A)
Qrr (nC)
20
1
125º
125ºC
S
5
25ºC
Irm
0
0
200
400
600
800
2
3
0
0
1000
di/dt (A/µ
µs)
Figure 19: Diode Reverse Recovery Charge and Peak
Current vs. di/dt
Rev 1: June 2009
0.5
25ºC
0
0
200
400
600
800
1000
di/dt (A/µ
µs)
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
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Page 6 of 7
AOD4146/AOI4146
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 1: June 2009
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 7 of 7