Datasheet

AOD442/AOI442
60V N-Channel MOSFET
General Description
Product Summary
The AOD442/AOI442 used advanced trench technology to
provide excellent RDS(ON) and low gate charge. Those
devices are suitable for use as a load switch or in PWM
applications.
VDS
60V
37A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 20mΩ
RDS(ON) (at VGS = 4.5V)
< 25mΩ
100% UIS Tested
100% Rg Tested
TO252
DPAK
Top View
Bottom View
Top View
TO-251A
IPAK
D
Bottom View
D
D
D
S
G
G
S
D
S
G
TC=25°C
S
Pulsed Drain Current
C
Avalanche Current C
Avalanche energy L=0.1mH
C
TC=25°C
Power Dissipation
B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
AD
Maximum Junction-to-Ambient
Maximum Junction-to-Case
Rev 0 : Aug 2009
Steady-State
Steady-State
A
IAS, IAR
30
A
EAS, EAR
45
mJ
60
W
30
2.1
RθJA
RθJC
www.aosmd.com
W
1.3
TJ, TSTG
Symbol
t ≤ 10s
A
7
PDSM
TA=70°C
V
5
PD
TC=100°C
±20
60
IDSM
TA=70°C
Units
V
26
IDM
TA=25°C
Continuous Drain
Current
Maximum
60
37
ID
TC=100°C
D
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
Current G
S
G
-55 to 175
Typ
17.4
51
1.8
°C
Max
25
60
2.5
Units
°C/W
°C/W
°C/W
Page 1 of 6
AOD442/AOI442
Electrical Characteristics (T J=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Conditions
Min
ID=250µA, VGS=0V
VDS=48V, VGS=0V
Zero Gate Voltage Drain Current
5
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
On state drain current
VDS=VGS ID=250µA
1.6
VGS=10V, VDS=5V
60
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=20A
TJ=125°C
VGS=4.5V, ID=20A
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
VDS=5V, ID=20A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=10V, VDS=30V, ID=20A
2.1
µA
100
nA
2.7
V
A
16
20
31
37
20
25
mΩ
1
V
32
A
65
0.7
mΩ
S
1535
1920
2300
pF
108
155
200
pF
70
116
165
pF
0.3
0.65
0.8
Ω
38
47.6
68
nC
20
24.2
30
nC
4.8
6
7
nC
8.5
14.4
20
nC
7.4
VGS=10V, VDS=30V, RL=1.5Ω,
RGEN=3Ω
Units
V
1
TJ=55°C
gFS
Max
60
VGS(th)
ID(ON)
IS
Typ
ns
5.1
ns
28.2
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=100A/µs
34
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
46
5.5
ns
41
ns
nC
A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0 : Aug 2009
www.aosmd.com
Page 2 of 6
AOD442/AOI442
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
10V
VDS=5V
4.5V
50
40
125°C
30
4V
ID(A)
ID (A)
40
30
20
20
3.5V
10
10
25°C
VGS=3V
0
0
0
1
2
3
4
2
5
2.5
30
4
4.5
Normalized On-Resistance
2.4
26
VGS=4.5V
RDS(ON) (mΩ)
3.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
22
18
14
VGS=10V
2.2
VGS=10V
ID=20A
2
1.8
17
5
2
VGS=4.5V10
1.6
1.4
1.2
ID=20A
1
0.8
10
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
25
50
75
100
125
150
175
200
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction
18
Temperature (Note E)
1.0E+02
50
ID=20A
1.0E+01
40
40
1.0E+00
30
IS (A)
RDS(ON) (mΩ)
3
125°C
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
20
25°C
1.0E-04
1.0E-05
10
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0 : Aug 2009
www.aosmd.com
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AOD442/AOI442
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3500
10
Capacitance (pF)
VGS (Volts)
3000
VDS=30V
ID=20A
8
6
4
2
Ciss
2500
2000
1500
Coss
1000
Crss
500
0
0
0
10
20
30
40
0
50
10
30
40
50
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
10µs
160
RDS(ON)
limited
DC
1.0
100µs
1ms
10ms
TJ(Max)=175°C
TC=25°C
0.1
0.0
0.01
0.1
1
10
VDS (Volts)
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
17
5
2
10
120
80
40
100
1000
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
TJ(Max)=175°C
TC=25°C
10µs
Power (W)
ID (Amps)
100.0
ZθJC Normalized Transient
Thermal Resistance
60
200
1000.0
10.0
20
0
0.0001
0.001
0.01
0.1
1
10
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=2.5°C/W
1
PD
0.1
Ton
0.01
0.00001
Single Pulse
0.0001
0.001
0.01
T
0.1
1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0 : Aug 2009
www.aosmd.com
Page 4 of 6
AOD442/AOI442
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
TA=25°C
TA=100°C
Power Dissipation (W)
IAR (A) Peak Avalanche Current
100
TA=150°C
10
TA=125°C
1
40
20
10
100
1000
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
0
25
50
75
100
125
150
175
TCASE (°C)
Figure 13: Power De-rating (Note F)
10000
50
TA=25°C
40
Power (W)
1000
30
20
17
5
2
10
100
10
10
1
0.00001
0
0
25
50
75
100
125
150
175
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
0.001
0.1
10
0
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
TCASE (°C)
Figure 14: Current De-rating (Note F)
ZθJA Normalized Transient
Thermal Resistance
37A
0
1
Current rating ID(A)
60
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=60°C/W
0.1
PD
0.01
Single Pulse
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0 : Aug 2009
www.aosmd.com
Page 5 of 6
AOD442/AOI442
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
VDC
DUT
Qgs
Qgd
-
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
Rg
-
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
VDC
Rg
-
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev 0 : Aug 2009
Vgs
L
Isd
+ Vdd
VDC
-
IF
t rr
dI/dt
I RM
Vdd
Vds
www.aosmd.com
Page 6 of 6