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Brochure
Samsung Memory DDR4 SDRAM
The new generation of high-performance, power-efficient memory
that delivers great reliability for enterprise applications
© 2015 Samsung Electronics Co.
Brochure
An optimized memory for enterprise-level workloads and client
workloads on low-end servers used as web, collaboration and
infrastructure systems.
Meet diverse enterprise workload demands,
while enhancing client performance and
battery life with higher bandwidth and reduced
power consumption
Rising energy costs and the need to provide greater
environmental sustainability are also placing demands on
chipmakers and server vendors. A server running a virtualized
environment can achieve a higher utilization that, in turn,
increases the total power consumption of the server. As a
result, CPU and server companies are focusing more on the
development of next-generation green IT systems.
Accelerated adoption of cloud computing, virtualization and
high-performance computing (HPC) technologies has made
higher-performing, higher-density memory a key factor for
optimal server operations. Highly virtualized environments
enable companies to run numerous applications on a single
server instead of multiple servers. A single server with more
virtual machines (VMs) requires not only a higher processor
speed, but also higher memory density .
The memory that supports next-generation, green IT systems
should meet the diverse demands of enterprise workloads
with higher performance, increased density, improved reliability
and low power consumption.
Requirements for memory become more diverse when
supporting a wide range of enterprise server applications, from
less critical workloads to mission-critical workloads. Enterpriselevel workloads, such as databases or transaction processing
that run on high-end servers, need a large capacity of in-memory
systems and higher reliability.
As screen resolution increases (up to 8K UHD), more memory
bandwidth is also needed for client applications. Adopting
higher bandwidth memory, users can better experience the
more natural and smoother texture inherent in high resolution
screens. Also, one of the most important factors in portable PCs
is battery life time. By reducing memory power consumption,
users can take advantage of their portable PCs longer with
extended battery life.
Mid-range servers that are used for virtualization or consolidation
require high bandwidth and scalability. Small form factor, lower
power consumption and low cost are essential requirements for
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Brochure
Leverage the expertize of a technology leader in innovation
Samsung DDR4 SDRAM provide an optimized
solution for enterprise applications
The portfolio includes the following modules :
Samsung DDR4 is an optimized solution for highly virtualized
environments, high-performance computing and networking
as well as PC clients. Samsung DDR4-based modules are
designed with a new system circuit architecture to deliver higher
performance with lower power requirements than previously
available memory products.
Voltage
Speed
3,200 Mbps
3.3 V
1,866 Mbps
1.8 V
2.5 V
1,600 Mbps
800 Mbps
133 Mbps
1.35 V
400 Mbps
SDR
DDR
DDR2
DDR3
DDR3L
Enterprise
Client
4 GB
-
UDIMMs/SoDIMMs
8 GB
RDIMMs
UDIMMs/SoDIMMs
16 GB
RDIMMs
UDIMMs/SoDIMMs
32 GB
RDIMMs/LRDIMMs
UDIMMs/SoDIMMs
64 GB
RDIMMs/LRDIMMs
-
128 GB
RDIMMs/LRDIMMs
-
256 GB
RDIMMs
-
Doubled bandwidth, along with reduced voltage and dramatically
lower power consumption, improve performance and optimize
the total cost of ownership (TCO). Samsung DDR4's enhanced
reliability, availability and serviceability (RAS) features provide
enhanced reliability and improved signal integrity (S/I).
1.2 V
1.5 V
Density
DDR4
To meet the ever increasing demand for higher density server
memory modules, Samsung offers 3DS (3 Dimensional
Stacked) DDR4 RDIMMs which apply TSV (Through Silicon Via)
technology. The new TSV 3DS stack technology enables higher
density DRAM stack packages with higher operational frequency
and reduced power consumption. The RDIMM configuration
along with 3DS TSV DRAM packages exhibits performance
benefits and lower power consumption over alternative high
density solutions to ultimately provide the lowest TCO for data
centers.
High speed and low voltage of DDR4 SDRAM
The Samsung portfolio of DDR4-based modules using 20 nmclass process technology includes registered dual inline memory
modules (RDIMMs), load-reduced DIMMs (LRDIMMs) for servers
and unregistered DIMMs (UDIMMs), and small outline DIMMs
(SODIMMs) for workstations and PCs. These memory modules
are available with initial speeds up to 2667 Mbps, increasing to
the Joint Electron Devices Engineering Council (JEDEC)-defined
3200 Mbps.
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Brochure
Low - power memory consumption with higher capacity and performance
DDR3
[GB per second]
DDR4
DDR4
60
52.5
DDR4-2666,
128-bit
= 42.7 GB/s
45
37.5
30
22.5
15
DDR3-1066,
128-bit
= 17.0 GB/s
7.5
...
2011
DDR4-2133,
128-bit
= 34 GB/s
DDR3-1866,
128-bit
= 30 GB/s
DDR3-1600,
128-bit
DDR3-1333, = 25.6 GB/s
128-bit
= 21.3 GB/s
2012
2013
2014
Increased performance for higher bandwidth
Max
45 %
Better
42 %
65 %
1.42
1
1
1DPC
DDR3L
1600 M
DDR4
2133 M
26 %
Power
Efficient
1.45
1.65
DDR3L
1333 M
DDR4
1867 M
[Watt/Performance]
26 %
3DPC
DDR3L
800 M
2017
2018
20 %
Power
Efficient
1.26
1
1
2DPC
2016
A major decrease in voltage and the improved input/output (I/O)
power efficiency of DDR4 synchronous dynamic RAM (SDRAM)
translates into significant cost savings. According to Samsung
internal testing, DDR4 boasts a continuous working voltage of
1.2 V, a voltage that is 11% lower than the 1.35 V consumed
by DDR3L. It also has a Pseudo Open Drain (POD) interface to
reduce I/O power consumption and increase power savings
by 50% compared to DDR3L. Overall DDR4 shows a higher
performance/watt of over 20%
Max
65 %
Better
45 %
2015
Reduce power usage for greener, lower-cost
computing
Samsung DDR4 delivers higher performance at higher speeds
than DDR3. DDR4 can achieve up to 3.2 Gbps bandwidth.
Compared to DDR3L (low power DDR3), Samsung DDR4 shows
overall performance improvements in every DIMM and over 40%
better performance at 1DIMM per channel.
Max
42 %
Better
DDR4-2400,
128-bit
= 38.4 GB/s
DDR4-3200,
128-bit
DDR4-2933, = 51.2 GB/s
128-bit
= 46.9 GB/s
20 %
1
1DPC
DDR4
1600 M
DDR3
1600 M
4
1.20
2DPC
DDR4
2133 M
Measured under controller’s
POR condition
Samsung SPEC_CPU Benchmark/DDR3L 1.35 V vs. DDR4 1.2 V/2Rank 16 GB
[Watt/Performance]
DDR3
1333 M
DDR4
1867 M
Samsung Power Benchmark/
DDR3L 1.35 V vs. DDR4 1.2 V
Brochure
100% detection of random 1-to 2-bit errors
+CRC
For Reliability : DQ
+Parity
For Reliability : CMD/ADD
0100 … 00
0100 … 00
0100 … 001011
0100 … 001
DDR3
Control
DDR4
+Per DRAM Addressability
For Better S/I : Vref setting
CLK 2N mode
+Gear Down Mode
For Better S/I : High Speed
RAS feature comparison of DDR3 and DDR4 SDRAM
3. Per DRAM Addressability for enhanced signal integrity
Provide greater reliability, availability and
serviceability (RAS)
Samsung DDR4 can control module components and enhance
signal integrity by controlling the ODT of Vref levels.
DDR3 modules provided only one RAS feature, their errorcorrecting code (ECC) capability. Compared to DDR3, Samsung
DDR4 provides more robust RAS features, such as Cyclic
Redundancy Check (CRC), Parity, Per DRAM Addressability and
Gear Down Mode.
Enhanced reliability and improved S/I for mission-critical
enterprise applications are directly attributable to Samsung
DDR4's significant advancements with the following RAS
features:
4. Gear Down Mode for improved signal integrity
DDR4 Gear Down Mode allows a high speed of DQ to be
maintained while decreasing the high speed of CMD/ADD.
Fault-tolerant, higher RAS systems supported
by DDR4 SDRAM can remain available for
considerably longer periods of time without
failure.
1. Cyclic Redundancy Check (CRC) for improved data
reliability
CRC is error-detecting code that detects accidental changes
to raw data of DRAM's DQ. CRC confirms 100% detection of
random 1- to 2-bit errors by enabling error detection capability
for data transfer.
2. On-chip parity detection for the integrity of Command/
Address
Parity for Command/Address (CMD/ADD) provides a method of
verifying the integrity of command and address transfers over a
link.
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Brochure
Samsung DDR4 SDRAM
delivering higher performance and reduced power consumption
with increased reliability. By taking advantage of the advanced
features of Samsung DDR4, companies can achieve greater
performance at a lower TCO.
Manage a range of enterprise workloads with
greater reliability, doubled bandwidth and
reduced power consumption
Designed with advanced system circuit architecture, Samsung
DDR4 supports a wide range of server memory needs by
DDR3 and DDR4 Specifications and features comparison
Feature
Component density, speed
Physical
512 Mb - 4 Gb
4 Gb - 16 Gb
0.8 – 1.6 Gbps
1.6 - 3.2 Gbps
8, 16, 32, 64 and 256 GB
1.5V, 1.5V, NA (1.35V, 1.35V, NA)
1.2 V, 1.2 V, 2.5 V
Vref
External Vref (VDD, 2)
Internal Vref (need training)
Data I/O
Center Tab Termination (CTT) (34 ohm)
POD (34 ohm)
Voltage(VDD, VDDQ, VPP)
Core architecture
DDR4
1, 2, 4, 8, 16, 32 and 64 GB
Module density
Interface
DDR3
CMD, ADDR I/O
CTT
CTT
Strobe
Bi-dir, diff
Bi-dir, diff
Number of banks
8 banks
16 banks (4-bank group)
Page size (X4, 8, 16)
1 KB, 1 KB, 2 KB
512 B, 1 KB, 2 KB
Number of prefetch
8 bits
8 bits
Added functions
RESET, ZQ, Dynamic ODT
RESET, ZQ, Dynamic ODT, CRC,
Data Bus Inversion (DBI), Multiple preamble
Package type, balls
(X4, 8, X16)
78, 96 BGA
78, 96 BGA
DIMM type
R, LR, U, SoDIMM
R, 3DS R, LR, (ECC/nECC) U/SoDIMM
DIMM pins
240 (R, LR, U), 204 (So)
288 (R, LR, U), 260 (So)
Legal and additional information
About Samsung Electronics Co., Ltd.
Samsung Electronics Co., Ltd. is a global leader in technology, opening new possibilities for people everywhere. Through relentless innovation and
discovery, we are transforming the worlds of TVs, smartphones, tablets, PCs, cameras, home appliances, printers, LTE systems, medical devices,
semiconductors and LED solutions. We employ 307,000 people across 84 countries with annual sales of U.S $196 billion. To discover more, please
visit official website at www.samsung.com
For more information
For more information about Samsung DDR4 SDRAM, visit www.samsung.com/semiconductor
Copyright ⓒ 2015 Samsung Electronics Co. Ltd. All rights reserved. Samsung is a registered trademark of Samsung
Electronics Co. Ltd. Specifications and designs are subject to change without notice. Non-metric weights and
measurements are approximate. All data were deemed correct at time of creation. Samsung is not liable for errors or
omissions. All brand, product, service names and logos are trademarks and/or registered trademarks of their respective
owners and are hereby recognized and acknowledged.
Samsung Electronics Co., Ltd.
(Maetan-dong) 129 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, Korea
2015-07
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