DRAM Flash - SSD MCP Storage 2H 2014 Displays Displays, Memory and Storage contacts PRODUCT SELECTION GUIDE Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and display technology. Its display panels, DRAM, flash, mobile and graphics memory are found in many computers – from ultrabooks to powerful servers – and in a wide range of handheld devices such as smartphones and tablets. Samsung is also a leader in TV displays. In addition, Samsung provides the industry’s widest line of storage products from the consumer to enterprise levels. These include optical disc drives as well as flash storage, such as Solid State Drives, and a range of embedded flash storage products. Markets DRAM SSD FLASH ASIC MOBILE/WIRELESS NOTEBOOK PCs/ ULTRABOOKS™ DESKTOP PCs/ WORKSTATIONS SERVERS NETWORKING/ COMMUNICATIONS CONSUMER ELECTRONICS To access our online sales portal, visit: https://smarttools.ssi.samsung.com www.samsung.com/us/oem-solutions LOGIC TFT/LCD ODD DRAM TABLE OF CONTENTS DRAM PAGES 4–13 samsung.com/dram • DDR4 SDRAM • Mobile DRAM • DDR3 SDRAM • Ordering Info • DDR2 SDRAM • Graphics DRAM FLASH - SSD PAGES 14–15 samsung.com/flash • eMMC • Solid State Drives (SSD) MULTI-CHIP PACKAGEs PAGES 16–17 samsung.com/mcp • eMMC + LPDDR2 • eMMC + LPDDR3 storage PAGES 18–20 samsung.com/flash-ssd samsungodd.com • Solid State Drives • Optical Disc Drives Displays PAGES 21–22 samsungdisplay.com • Public Information Display (PID) Product Classification • SNB/UNB • Indoor PID • • • • E-Board Outdoor PID Tablets Monitors ContactS PAGES 23–31 samsung.com/us/oem-solutions • Sales Representatives and Distributors • To access our online sales portal, visit: https://smarttools.ssi.samsung.com // DDR4 SDRAM COMPONENTS Density Voltage 4Gb 1.2V 8Gb 1.2V Organization 1G x 4 512M x8 256Mx16 2G x 4 1G x 8 Part Number K4A4G045WD-BCRC/PB K4A4G085WD-BCRC/PB K4A4G165WD-BCRC/PB K4A8G045WB-BCRC/PB K4A8G085WB-BCRC/PB # Pins-Package 78 Ball -FBGA 78 Ball -FBGA 96 Ball -FBGA 78 ball FBGA 78 ball FBGA Compliance Lead Free & Halogen Free, Flip Chip Lead Free & Halogen Free, Flip Chip Lead Free & Halogen Free Lead Free & Halogen Free Lead Free & Halogen Free Speed (Mbps) 2400/2133 2400/2133 2400/2133 2400/2133 2400/2133 Dimensions 7.5x11mm 7.5x11mm 7.5x13.3mm Production Now Now Now 2Q'15 2Q'15 Part Number Composition Compliance Speed (Mbps) Ranks Production M393A1G40DB0-CPB/CRC 4Gb (1G x4) * 18 Lead Free & Halogen Free, Flip Chip 2133/2400 1 Now M393A1G43DB0-CPB/CRC 4Gb (512M x8) * 18 Lead Free & Halogen Free, Flip Chip 2133/2400 2 Now M393A2G40DB0-CPB/CRC 4Gb (1G x4) * 36 Lead Free & Halogen Free, Flip Chip 2133/2400 2 Now M393A2K40BB0-CPB/CRC 8Gb (2G x4) * 18 Lead Free & Halogen Free 2133/2400 1 1Q'15 M393A2K43BB0-CPB/CRC 8Gb (1G x8) * 18 Lead Free & Halogen Free 2133/2400 1 1Q'15 DDR4 SDRAM REGISTERED MODULES Density Voltage Organization 8GB 1.2V 1Gx 72 16GB 1.2V 2Gx 72 32GB 1.2V 4Gx 72 M393A4K40BB0-CPB/CRC 8Gb (2G x4) * 36 Lead Free & Halogen Free 2133/2400 2 1Q'15 64GB TSV 1.2V 8Gx 72 M393A8G40D40-CRB 4Gb (4Gx4)*36 Lead Free & Halogen Free 2133 4 Now Notes: DDR4 4Gb based DDR4 8Gb based 0=IDT 0=IDT 2 =Montage 4 =Montage PB = DDR4-2133(15-15-15) PB = DDR4-2133(15-15-15) RC = DDR4-2400(17-17-17) RC = DDR4-2400(17-17-17) DDR4 SDRAM LOAD REDUCED MODULES Density Voltage Organization Part Number Composition Compliance Speed (Mbps) Ranks Production 32GB 1.2V 4Gx 72 M386A4G40DM0-CPB/CRC 4Gb DDP (2Gx4) * 36 Lead Free & Halogen Free 2133/2400 4 Now 64GB 1.2V 8Gx 72 M386A8K40BM0-CPB/CRC 8Gb DDP (4Gx4) * 36 Lead Free & Halogen Free 2133/2400 4 1Q'15 Notes: DDR4 4Gb based DDR4 8Gb based 0=IDT 0=IDT 2 =Montage 4 =Montage PB = DDR4-2133(15-15-15) PB = DDR4-2133(15-15-15) RC = DDR4-2400(17-17-17) RC = DDR4-2400(17-17-17) DDR4 SDRAM UNBUFFERED MODULES Density Voltage Organization 4GB 1.2V 512Mx 64 8GB 1.2V 1Gx 64 16GB 1.2V 2Gx 64 Notes: PB = DDR4-2133(15-15-15) Part Number Composition Compliance Speed (Mbps) Ranks Production M378A5143DB0-CPB/CRC 4Gb (512M x8) *8 Lead Free & Halogen Free 2133/2400 1 Now M378A5144BB0-CPB/CRC 8Gb (1G x16) * 4 Lead Free & Halogen Free 2133/2400 1 2Q'15 M378A1G43DB0-CPB/CRC 4Gb (512M x8) *16 Lead Free & Halogen Free 2133/2400 2 Now M378A1K43BB0-CPB/CRC 8Gb (1G x8) * 8 Lead Free & Halogen Free 2133/2400 1 2Q'15 M378A2K43BB0-CPB/CRC 8Gb (1G x8) * 16 Lead Free & Halogen Free 2133/2400 2 2Q'15 RC = DDR4-2400(17-17-17) DDR4 SDRAM ECC UNBUFFERED MODULES Density Voltage Organization 8GB 1.2V 1G x72 16GB 1.2V 2G x72 Notes: PB = DDR4-2133(15-15-15) Part Number Composition Compliance Speed (Mbps) Ranks Production M391A1G43DB0-CPB/CRC 4Gb (512M x8) * 18 Lead Free & Halogen Free 2133/2400 2 Now M391A1K43BB0-CPB/CRC 8Gb (1G x8) * 9 Lead Free & Halogen Free 2133/2400 1 2Q'15 M391A2G43BB0-CPB/CRC 8Gb (1G x8) * 18 Lead Free & Halogen Free 2133/2400 2 2Q'15 Part Number Composition Compliance Speed (Mbps) Ranks Production M471A5143DB0-CPB/CRC 4Gb (512M x8) * 8 Lead Free & Halogen Free 2133/2400 1 Now RC = DDR4-2400(17-17-17) DDR4 SDRAM SODIMM MODULES Density 4GB 8GB Voltage 1.2V Organization 512Mx 64 1.2V 1Gx 64 16GB 1.2V 2Gx 64 Notes: PB = DDR4-2133(15-15-15) 4 DDR4 SDRAM M471A5143BB0-CPB/CRC 8Gb (1G x16) * 4 Lead Free & Halogen Free 2133/2400 1 2Q'15 M471A1G43DB0-CPB/CRC 4Gb (512M x8) * 16 Lead Free & Halogen Free 2133/2400 2 Now M471A1K43BB0-CPB/CRC 8Gb (1G x8) * 8 Lead Free & Halogen Free 2133/2400 1 2Q'15 M471A2K43BB0-CPB/CRC 8Gb (1G x8) * 16 Lead Free & Halogen Free 2133/2400 2 2Q'15 RC = DDR4-2400(17-17-17) 2H 2014 samsung.com/dram samsung.com/dram Density 8GB Voltage Organization 1.2V 1G x72 16GB 1.2V 2G x72 Notes: 0 =IDT 2 =Montage Part Number Composition Compliance Speed (Mbps) Ranks Production M474A1K43BB0-CPB/RC 8Gb (1G x8) * 9 Lead Free & Halogen Free 2133/2400 1 2Q'15 M474A1G43DB0-CPB/CRC 4Gb (512M x8) * 18 Lead Free & Halogen Free 2133/2400 2 Now M474A2K43BB0-CPB/RC 8Gb (1G x8) * 18 Lead Free & Halogen Free 2133/2400 2 2Q'15 PB = DDR4-2133(15-15-15) RC = DDR4-2400(17-17-17) DDR3 SDRAM REGISTERED MODULES Density Voltage Organization Part Number 8GB 1.5V 1Gx72 16GB 8GB 1.5V 1.35V 2Gx72 1Gx72 16GB 1.35V 2Gx72 32GB 1.35V 4Gx72 Notes: 8 = IDT A1 Evergreen 9 = Inphi UVGS02 Composition Compliance Speed (Mbps) Ranks Production M393B1K70QB0-CMA (08/09) 2Gb (512M x4) * 36 Lead Free & Halogen Free, Flip Chip 1866 2 Now M393B1G70QH0-CMA (08/09) 4Gb (1G x4) * 18 Lead Free & Halogen Free 1866 1 Now M393B1G73QH0-CMA (08/09) 4Gb (1G x4) * 18 Lead Free & Halogen Free 1866 2 Now M393B2G70QH0-CM (08/09) 4Gb (512M x8) * 36 Lead Free & Halogen Free 1866 2 Now M393B2G70DB0-CMA (02/03) 4Gb (1G x4) * 36 Lead Free & Halogen Free 1866 2 Now M393B1K70QB0-YK0 (08/09) 2Gb (512M x4) * 36 Lead Free & Halogen Free, Flip Chip 1600 2 Now M393B1G70QH0-YK0 (08/09) 4Gb (1G x4) * 18 Lead Free & Halogen Free 1600 1 Now M393B2G70QH0-YK0 (08/09) 4Gb (1G x4) * 36 Lead Free & Halogen Free 1600 2 Now M393B2G70DB0-YK0 (02/03) 4Gb (1G x4) * 36 Lead Free & Halogen Free, Flip Chip 1600 2 Now M393B4G70DM0-YH9(02/03) 8Gb DDP (2G x4) * 36 Lead Free & Halogen Free 1333 4 Now 2 = IDT Alpine 3 = Inphi XV-GS02 F8 = DDR3-1066 (7-7-7) H9 = DDR3-1333 (9-9-9) K0 = DDR3-1600 (11-11-11) MA = DDR3-1866 (13-13-13) DDR3 SDRAM Load Reduced REGISTERED MODULES Density 32GB 64GB Notes: Voltage Organization 1.35V 4Gx72 1.5V 1.35V 8Gx72 1.5V 3 = Inphi iMB GS02B Part Number Composition Compliance Speed (Mbps) Ranks Production M386B4G70DM0-YK0(3/4) 8Gb DDP (2G x4) * 36 Lead Free & Halogen Free 1600 4 Now M386B4G70DM0-CMA(3/4) 8Gb DDP (2G x4) * 36 Lead Free & Halogen Free 1866 4 Now M386B8G70DE0-YH9(4) 16Gb QDP (4G x4) * 36 Lead Free & Halogen Free 1333 8 Now M386B8G70DE0-CK0(4) 16Gb QDP (4G x4) * 36 Lead Free & Halogen Free 1600 8 Now 4 = Montage C1 DDR3 SDRAM VLP REGISTERED MODULES Density Voltage Organization 1.5V 8GB 1.35V 1.5V 1Gx72 1.35V 16GB 1.5V 1.35V 2Gx72 32GB 1.35V Notes: 2 = IDT Alpine 4Gx72 Part Number Composition Compliance Speed (Mbps) Ranks Production M392B1G70DB0-CMA (03/04) 4Gb(1Gx4) * 18 Lead Free & Halogen Free, Flip Chip 1866 1 Now M392B1G70DB0-YK0(03/04) 4Gb(1Gx4) * 18 Lead Free & Halogen Free, Flip Chip 1600 1 Now M392B1G73DB0-CMA (03/04) 4Gb (512M x8) * 18 Lead Free & Halogen Free, Flip Chip 1866 2 Now M392B1G73DB0-YK0 (03/04) 4Gb (512M x8) * 18 Lead Free & Halogen Free, Flip Chip 1600 2 Now M392B2G70DM0-CMA (03/04) 4Gb DDP (2G DDP x4) * 18 Lead Free & Halogen Free, Flip Chip 1866 2 Now M392B2G70DM0-YK0 (03/04) 4Gb DDP (2G DDP x4) * 18 Lead Free & Halogen Free, Flip Chip 1600 2 Now M392B4G70DE0-YH9 (03/04) 4Gb QDP (4G x4) * 18 Lead Free & Halogen Free, Flip Chip 1333 4 Now 3 = Inphi XV-GS02 K0 = DDR3-1600 (11-11-11) MA = DDR3-1866 (13-13-13) DDR3 SDRAM UNBUFFERED MODULES (ECC) Density 8GB Notes: Voltage 1.5V 1.35V Organization 1024Mx72 H9 = DDR3-1333 (9-9-9) samsung.com/dram Part Number Composition Compliance Speed (Mbps) Ranks Production M391B1G73QH0-CMA 4Gb (512M x8) * 18 Lead Free & Halogen Free 1866 2 Now 4Gb (512M x8) * 18 Lead Free & Halogen Free 1600 2 Now M391B1G73QH0-YK0 K0 = DDR3-1600 (11-11-11) 2H 2014 MA = DDR3-1866 (13-13-13) DDR3 SDRAM 5 DRAM DDR4 SDRAM ECC SODIMM MODULES DDR3 SDRAM UNBUFFERED MODULES Density Voltage Organization Part Number Composition Compliance Speed (Mbps) Ranks Production 2GB 1.5V 256Mx64 M378B5773QB0-CK0/MA 2Gb (256M x8) * 8 Lead Free & Halogen Free 1600/1866 1 Now M378B5173QH0-CK0/MA 4Gb (512M x8) * 8 Lead Free & Halogen Free 1600/1866 1 Now M378B5173DB0-CK0/MA 4Gb (512M x8) * 8 Lead Free & Halogen Free 1600/1866 1 Now M378B5173EB0-CK0/MA 4Gb (512M x8) * 8 Lead Free & Halogen Free 1600/1866 1 Now M378B5173QH0-YK0 4Gb (512M x8) * 8 Lead Free & Halogen Free 1600 1 2Q'15 M378B5173EB0-YK0 4Gb (512M x8) * 8 Lead Free & Halogen Free 1600 1 2Q'15 M378B1G73QH0-CK0/MA 4Gb (512M x8) * 16 Lead Free & Halogen Free 1600/1866 2 Now M378B1G73DB0-CK0/MA 4Gb (512M x8) * 16 Lead Free & Halogen Free 1600/1866 2 Now M378B1G73EB0-CK0/MA 4Gb (512M x8) * 16 Lead Free & Halogen Free 1600/1866 2 Now M378B1G73QH0-YK0 4Gb (512M x8) * 16 Lead Free & Halogen Free 1600 2 2Q'15 M378B1G73EB0-YK0 4Gb (512M x8) * 16 Lead Free & Halogen Free 1600 2 2Q'15 1.5V 4GB 512Mx64 1.35V 1.5V 8GB 1024Mx64 1.35V Notes: K0 = DDR3-1600 (11-11-11) MA = DDR3-1866 (13-13-13) DDR3 SDRAM COMPONENTS Density 1Gb 2Gb 4Gb 1Gb 2Gb 4Gb Voltage 1.5V 1.5V 1.5V 1.35V 1.35V 1.35V Organization Part Number # PinsPackage Compliance Speed (Mbps) Dimensions Production 256M x4 K4B1G0446G-BC(H9/K0/MA) 78 Ball -FBGA Lead Free & Halogen Free, Flip Chip 1333/1600/1866 7.5x11mm Now 128M x8 K4B1G0846G-BC(H9/K0/MA) 78 Ball -FBGA Lead Free & Halogen Free, Flip Chip 1333/1600/1866 7.5x11mm Now 128M x16 K4B1G1646G-BC(H9/K0/MA/NB) 96 Ball -FBGA Lead Free & Halogen Free, Flip Chip 1333/1600/186/2133 7.5x13.3mm Now 512M x4 K4B2G0446Q-BC(K0/MA) 78 Ball -FBGA Lead Free & Halogen Free, Flip Chip 1600/1866 7.5x11mm Now 256M x8 K4B2G0846Q-BC(K0/MA) 78 Ball -FBGA Lead Free & Halogen Free, Flip Chip 1600/1866 7.5x11mm Now 128M x16 K4B2G1646Q-BC(K0/MA/NB) 96 Ball -FBGA Lead Free & Halogen Free, Flip Chip 1600/1866/2133 7.5x13.3mm Now 1G x4 K4B4G0446Q-HC(K0/MA) 78 Ball -FBGA Lead Free & Halogen Free 1600/1866 10x11mm Now 512M x8 K4B4G0846Q-HC(K0/MA) 78 Ball -FBGA Lead Free & Halogen Free 1600/1866 10x11mm Now 512M x8 K4B4G0846D-BC(K0/MA/NB) 78 Ball -FBGA Lead Free & Halogen Free, Flip Chip 1600/1866/2133 7.5x11mm Now 256Mx16 K4B4G1646Q-HC(K0/MA) 96 Ball -FBGA Lead Free & Halogen Free 1600/1866 10x13.3mm Now 256Mx16 K4B4G1646D-BC(K0/MA/NB) 96 Ball -FBGA Lead Free & Halogen Free, Flip Chip 1600/1866/2133 7.5x13.3mm Now 256M x4 K4B1G0446G-BY(F8/H9/K0) 78 Ball -FBGA Lead Free & Halogen Free, Flip Chip 1333/1600 7.5x11mm Now 128M x8 K4B1G0846G-BY(H9/K0) 78 Ball -FBGA Lead Free & Halogen Free, Flip Chip 1333/1600 7.5x11mm Now 128M x16 K4B1G1646G-BY(H9/K0) 96 Ball -FBGA Lead Free & Halogen Free, Flip Chip 1333/1600 7.5x13.3mm Now 512M x4 K4B2G0446Q-BYK0 78 Ball -FBGA Lead Free & Halogen Free, Flip Chip 1600 7.5x11mm Now 256M x8 K4B2G0846Q-BYK0/MA 78 Ball -FBGA Lead Free & Halogen Free, Flip Chip 1600/1866 7.5x11mm Now 128M x16 K4B2G1646Q-BYK0/MA 96 Ball -FBGA Lead Free & Halogen Free, Flip Chip 1600/1866 7.5x13.3mm Now 1G x4 K4B4G0446Q-HYK0 78 Ball -FBGA Lead Free & Halogen Free 1600 10x11mm Now 512M x8 K4B4G0846Q-HYK0 78 Ball -FBGA Lead Free & Halogen Free 1600 10x11mm Now 512M x8 K4B4G0846D-BYK0 78 Ball -FBGA Lead Free & Halogen Free, Flip Chip 1600 7.5x11mm Now 256Mx16 K4B4G1646Q-HYK0 96 Ball -FBGA Lead Free & Halogen Free 1600 10x13.3mm Now 256Mx16 K4B4G1646D-BYK0/MA 96 Ball -FBGA Lead Free & Halogen Free, Flip Chip 1600/1866 7.5x13.3mm Now 512Mx16 K4B8G1646Q-MYK0 96 Ball -FBGA Lead Free & Halogen Free 1600 11x13.3mm Now 8Gb 1.35V Notes: H9 = DDR3-1333 (9-9-9) K0 = DDR3-1600 (11-11-11) MA = DDR3-1866 (13-13-13) NB = DDR3-2133 (14-14-14) DDR3 SDRAM ECC SODIMM MODULES Density 8GB 6 Voltage 1.5V 1.35V Organization 1024Mx64 Part Number Composition Compliance Speed (Mbps) Ranks Production M474B1G73QH0-CMA 4Gb x8*18 Lead Free & Halogen Free 1866 2 Now M474B1G73QH0-YK0 4Gb x8*18 Lead Free & Halogen Free 1600 2 Now DDR3 SDRAM & DDR2 SDRAM 2H 2014 samsung.com/dram Density Voltage Organization Part Number Composition Compliance Speed (Mbps) Ranks Production 2GB 1.35V 256Mx64 M471B5674QH0-YK0 4Gb (256M x16) * 4 Lead Free & Halogen Free 1600 1 Now M471B5173QH0-YK0 4Gb (512M x8) * 8 Lead Free & Halogen Free 1600 1 Now 4GB 1.35V 512Mx64 M471B5173DB0-YK0 4Gb (512M x8) * 8 Lead Free & Halogen Free 1600 1 Now M471B5173EB0-YK0 4Gb (512M x8) * 8 Lead Free & Halogen Free 1600 1 Now 8GB 1.35V 1024Mx64 Notes: H9 = DDR3-1333 (9-9-9) M471B1G73QH0-YK0 4Gb (512M x8) * 16 Lead Free & Halogen Free 1600 2 Now M471B1G73DB0-YK0 4Gb (512M x8) * 16 Lead Free & Halogen Free 1600 2 Now M471B1G73EB0-YK0 4Gb (512M x8) * 16 Lead Free & Halogen Free 1600 2 Now K0 = DDR3-1600 (11-11-11) MA = DDR3-1866 (13-13-13) DDR2 SDRAM COMPONENTS Density 512Mb 1Gb Notes: Organization Part Number # Pins-Package Dimensions Package Speed (Mbps) Production 64M x8 K4T51083QQ-BC(E6/F7/E7/F8) 60-FBGA 7.5x9.5mm Lead free & Halogen free , Flip chip 667/800/1066 Now 32M x16 K4T51163QQ-BC(E6/F7/E7/F8) 84-FBGA 7.5x12.5mm Lead free & Halogen free , Flip chip 667/800/1066 Now 128M x8 K4T1G084QG-BC(E6/F7/E7/F8) 60-FBGA 7.5x9.5mm Lead free & Halogen free , Flip chip 667/800/1066 Now 64M x16 K4T1G164QG-BC(E6/F7/E7/F8) 84-FBGA 7.5x12.5mm Lead free & Halogen free , Flip chip 667/800/1066 Now E6 = DDR2-667 (5-5-5) E7 = DDR2-800 (5-5-5) F7 = DDR2-800 (6-6-6) F8 = DDR2-1066 (7-7-7) GRAPHICS DRAM COMPONENTS Type Density Organization 8Gb 256Mx32 4Gb 128Mx32 GDDR5 2Gb 4Gb 64Mx32 256Mx16 gDDR3 2Gb Notes: 128Mx16 Package (1) Speeds (clock cycle - speed bin) samsung.com/dram Part Number Package VDD/VDDQ Speed Bin (MHz) Production K4G80325FB-HC(04/03/28/25) 170-FCFBGA 1.5V/1.5V 5000/6000/7000/8000 CS: '15,1Q K4G80325FB-HC(04/03/28/25) 170-FCFBGA 1.35V/1.35V 4000/5000/(6000)/ (7000) CS: '15,1Q K4G41325FC-HC(04/03/28) 170-FCFBGA 1.5V/1.5V 5000/6000/7000 Now K4G41325FC-HC(04/03) 170-FCFBGA 1.35V/1.35V 4000/5000 Now K4G20325FS-HC(04/03) 170-FBGA 1.5V/1.5V 5000/6000 Now K4G20325FS-HC(04/03) 170-FBGA 1.35V/1.35V 4000/5000 Now K4G20325FD-FC(04/03/28) 170-FBGA 1.5V/1.5V 5000/6000/7000 Now K4G20325FD-FC(04/03) 170-FBGA 1.35V/1.35V 4000/5000 Now K4W4G1646E-BC(1A/1B) 96-FCFBGA 1.5V/1.5V 2133/2400 CS: '14,Oct K4W4G1646E-BC(1A/1B) 96-FCFBGA 1.35V/1.35V 1866/2133 CS: '14,Oct K4W4G1646D-BC(12/11/1A) 96-FCFBGA 1.5V/1.5V 1600/1866/2133 Now K4W4G1646D-BC(1A) 96-FCFBGA 1.35V/1.35V 1866 Now K4W4G1646D-BY(12) 96-FCFBGA 1.35V/1.35V 1600 Now K4W2G1646Q-BC(12/11/1A) 96-FCFBGA 1.5V/1.5V 1600/1866/2133 Now K4W2G1646Q-BC(1A) 96-FCFBGA 1.35V/1.35V 1866 Now K4W2G1646Q-BY(12) 96-FCFBGA 1.35V/1.35V 1600 Now H: FBGA (Halogen Free & Lead Free) (DDR3) B: FCFBGA (Halogen Free & Lead Free) (DDR3) H: FCFBGA (Halogen Free & Lead Free) (GDDR5) F: FBGA (Halogen Free & Lead Free) (GDDR5) 25: 0.25ns (8000Mbps) 28: 0.28ns (7000Mbps) 03: 0.3ns (6000Mbps) 04: 0.4ns (5000Mbps) 2H 2014 05: 0.5ns (4000Mbps) 1B: 8.3ns (2400Mbps gDDR3) 1A: 1.0ns (2133Mbps gDDR3) 11: 1.1ns (1866Mbps) 12: 1.25ns (1600Mbps) Graphics DRAM 7 DRAM DDR3 SDRAM SODIMM MODULES MOBILE DRAM COMPONENTS Type Density 4Gb 8Gb LPDDR2 12Gb 16Gb 4Gb 8Gb 12Gb LPDDR3 16Gb 24Gb 8 Mobile DRAM Organization Part Number Package Power Production 1CH x32 K4P4G324EQ-AGC2 168-FBGA, 12x12 PoP, SDP, 1066Mbps 1.8V/1.2V/1.2V Now 1CH x32 K4P4G324EQ-FGC2 134-FBGA, 11x11.5 , SDP, 1066Mbps 1.8V/1.2V/1.2V Now 1CH x32 K4P8G304EQ-AGC2 168-FBGA, 12x12 PoP, DDP, 1066Mbps 1.8V/1.2V/1.2V Now 1CH x32 K4P8G304EQ-PGC2 216-FBGA, 12x12 PoP, DDP, 1066Mbps 1.8V/1.2V/1.2V Now 2CH x32 K3PE7E70QM-BGC2 216-FBGA, 12x12 PoP, DDP, 1066Mbps 1.8V/1.2V/1.2V Now 2CH x32 K3PE7E70QM-CGC2 220-FBGA, 14x14 PoP, DDP, 1066Mbps 1.8V/1.2V/1.2V Now 1CH x32 K4P2E304EQ-AGC2 168-FBGA, 12x12 PoP, TDP, 1066Mbps 1.8V/1.2V/1.2V Now 1CH x32 K4PAG304EQ-AGC2 168-FBGA, 12x12 PoP, QDP, 1066Mbps 1.8V/1.2V/1.2V Now 2CH x32 K3PE0E00QM-BGC2 216-FBGA, 12x12 PoP, QDP, 1066Mbps 1.8V/1.2V/1.2V Now 2CH x32 K3PE0E00QM-CGC2 220-FBGA, 14x14 PoP, QDP, 1066Mbps 1.8V/1.2V/1.2V Now 1CH x32 K4E4E324EE-EGCE 178-FBGA, 11x11.5, SDP, 1600Mbps 1.8V/1.2V/1.2V Now 1CH x32 K4E8E304EE-EGCE 178-FBGA, 11x11.5, DDP, 1600Mbps 1.8V/1.2V/1.2V Now 1CH x32 K4E8E304EE-AGCE 168-FBGA, 12x12, DDP, 1600Mbps 1.8V/1.2V/1.2V Now 2CH x32 K3QF1F10EM-AGCE 253-FBGA, 11x11.5, DDP, 1600Mbps 1.8V/1.2V/1.2V Now 1CH x32 K4E2E304EE-AGCE 168-FBGA, 12x12, TDP, 1600Mbps 1.8V/1.2V/1.2V Now 1CH x32 K4E6E304EE-EGCE 178-FBGA, 11x11.5, QDP, 1600Mbps 1.8V/1.2V/1.2V Now 1CH x32 K4E6E304EE-AGCE 168-FBGA, 12x12, QDP, 1600Mbps 1.8V/1.2V/1.2V Now 2CH x32 K3QF2F20EM-AGCE 253-FBGA, 11x11.5, QDP, 1600Mbps 1.8V/1.2V/1.2V Now 2CH x32 K3QF2F20EM-FGCE 256-FBGA, 14x14 PoP, QDP, 1600Mbps 1.8V/1.2V/1.2V Now 2CH x32 K3QF2F20EM-QGCE 216-FBGA, 15x15 PoP, QDP, 1600Mbps 1.8V/1.2V/1.2V Now 2CH x32 K3MF8F80DM-MGCE 504-FBGA, 15x15 PoP, QDP, 1600Mbps 1.8V/1.2V/1.2V Now 2CH x32 K3QF6F60MM-FGCE 256-FBGA, 14x14 PoP, QDP, 1600Mbps 1.8V/1.2V/1.2V Now 2CH x32 K3QF6F60MM-QGCE 216-FBGA, 15x15 PoP, QDP, 1600Mbps 1.8V/1.2V/1.2V Now 2CH x32 K3MF9F90MM-MGCE 504-FBGA, 15x15 PoP, QDP, 1600Mbps 1.8V/1.2V/1.2V Now 2H 2014 samsung.com/dram 1 2 3 4 5 6 7 8 9 10 11 K 4 T XX XX X X X X X XX SAMSUNG Memory Speed Temp & Power Package Type Generation Interface (VDD, VDDQ) Number of Internal Banks DRAM DRAM Type Density Bit Organization 1. Memory (K) 2. DRAM: 4 3. DRAM Type B: DDR3 SDRAM D: GDDR SDRAM G: GDDR5 SDRAM H: DDR SDRAM J: GDDR3 SDRAM M: Mobile SDRAM N: SDDR2 SDRAM S: SDRAM T: DDR SDRAM U: GDDR4 SDRAM V: Mobile DDR SDRAM Power Efficient Address W: SDDR3 SDRAM X: Mobile DDR SDRAM Y: XDR DRAM Z: Value Added DRAM 4. Density 10: 1G, 8K/32ms 16: 16M, 4K/64ms 26: 128M, 4K/32ms 28: 128M, 4K/64ms 32: 32M, 2K/32ms 50: 512M, 32K/16ms 51: 512M, 8K/64ms 52: 512M, 8K/32ms 54: 256M, 16K/16ms 55: 256M, 4K/32ms 56: 256M, 8K/64ms 62: 64M, 2K/16ms 64: 64M, 4K/64ms 68: 768M, 8K/64ms 1G: 1G, 8K/64ms 2G: 2G, 8K/64ms 4G: 4G, 8K/64ms 5. Bit Organization 02: x2 04: x4 06: x4 Stack (Flexframe) 07: x8 Stack (Flexframe) samsung.com/dram DRAM COMPONENT DRAM ORDERING INFORMATION 08: x8 15: x16 (2CS) 16: x16 26: x4 Stack (JEDEC Standard) 27: x8 Stack (JEDEC Standard) 30: x32 (2CS, 2CKE) 31: x32 (2CS) 32: x32 6. # of Internal Banks 2: 2 Banks 3: 4 Banks 4: 8 Banks 5: 16 Banks 7. Interface ( VDD, VDDQ) 2: LVTTL, 3.3V, 3.3V 4: LVTTL, 2.5V, 2.5V 5: SSTL-2 1.8V, 1.8V 6: SSTL-15 1.5V, 1.5V 8: SSTL-2, 2.5V, 2.5V A: SSTL, 2.5V, 1.8V F: POD-15 (1.5V,1.5V) H: SSTL_2 DLL, 3.3V, 2.5V M: LVTTL, 1.8V, 1.5V N: LVTTL, 1.5V, 1.5V P: LVTTL, 1.8V, 1.8V Q: SSTL-2 1.8V, 1.8V R: SSTL-2, 2.8V, 2.8V U: DRSL, 1.8V, 1.2V 8. Generation A: 2nd Generation B: 3rd Generation C: 4th Generation D: 5th Generation E: 6th Generation F: 7th Generation G: 8th Generation H: 9th Generation I: 10th Generation J: 11th Generation K: 12th Generation M: 1st Generation N: 14th Generation Q: 17th Generation 2H 2014 9. Package Type DDR2 DRAM L: TSOP II (Lead-free & Halogen-free) H: FBGA (Lead-free & Halogen-free) F: FBGA for 64Mb DDR (Lead-free & Halogen-free) 6: sTSOP II (Lead-free & Halogen-free) T: TSOP II N: sTSOP II G: FBGA U: TSOP II (Lead-free) V: sTSOP II (Lead-free) Z: FBGA (Lead-free) DDR2 SDRAM Z: FBGA (Lead-free) J: FBGA DDP (Lead-free) Q: FBGA QDP (Lead-free) H: FBGA (Lead-free & Halogen-free) M: FBGA DDP (Lead-free & Halogen-free) E: FBGA QDP (Lead-free & Halogen-free) T: FBGA DSP (Lead-free & Halogen-free, Thin) DDR3 SDRAM Z: FBGA (Lead-free) H: FBGA (Halogen-free & Lead-free) Graphics Memory Q: TQFP U: TQFP (Lead Free) G: 84/144 FBGA V: 144 FBGA (Lead Free) Z: 84 FBGA (Lead Free) T: TSOP L: TSOP (Lead Free) A: 136 FBGA B: 136 FBGA (Lead Free) H: FBGA (Hologen Free & Lead Free) E: 100 FBGA (Hologen Free & Lead Free) SDRAM L TSOP II (Lead-free & Halogen-free) N: STSOP II T: TSOP II U: TSOP II (Lead-free) V: sTSOP II (Lead-free) DRAM Ordering Information 9 COMPONENT DRAM ORDERING INFORMATION 1 2 3 4 5 6 7 8 9 10 11 K 4 T XX XX X X X X X XX SAMSUNG Memory Speed Temp & Power Package Type Generation Interface (VDD, VDDQ) Number of Internal Banks DRAM DRAM Type Density Bit Organization XDR DRAM J: BOC(LF) P: BOC Mobile DRAM Leaded/Lead Free G/A: 52balls FBGA Mono R/B: 54balls FBGA Mono X/Z: 54balls BOC Mono J/V: 60(72)balls FBGA Mono 0.5pitch L /F: 60balls FBGA Mono 0.8pitch S/D: 90balls FBGA Monolithic (11mm x 13mm) F/H: Smaller 90balls FBGA Mono Y/P: 54balls CSP DDP M/E: 90balls FBGA DDP 10. Temp & Power - COMMON (Temp, Power) C: Commercial, Normal (0’C – 95’C) & Normal Power C: (Mobile Only) Commercial (-25 ~ 70’C), Normal Power J: Commercial, Medium L: Commercial, Low (0’C – 95’C) & Low Power L: (Mobile Only) Commercial, Low, i-TCSR F: Commercial, Low, i-TCSR & PASR & DS E: Extended (-25~85’C), Normal N: Extended, Low, i-TCSR G: Extended, Low, i-TCSR & PASR & DS I: Industrial, Normal (-40’C – 85’C) & Normal Power P: Industrial, Low (-40’C – 85’C) & Low Power H: Industrial, Low, i-TCSR & PASR & DS 11. Speed (Wafer/Chip Biz/BGD: 00) DDR SDRAM CC: DDR400 (200MHz @ CL=3, tRCD=3, tRP=3) B3: DDR333 (166MHz @ CL=2.5, tRCD=3, tRP=3) *1 A2: DDR266 (133MHz @ CL=2 , tRCD=3, tRP=3) B0: DDR266 (133MHz @ CL=2.5, tRCD=3, tRP=3) Note 1: "B3" has compatibility with "A2" and "B0" 10 DRAM Ordering Information DDR2 SDRAM CC: DDR2-400 (200MHz @ CL=3, tRCD=3, tRP=3) D5: DDR2-533 (266MHz @ CL=4, tRCD=4, tRP=4) E6: DDR2-667 (333MHz @ CL=5, tRCD=5, tRP=5) F7: DDR2-800 (400MHz @ CL=6, tRCD=6, tRP=6) E7: DDR2-800 (400MHz @ CL=5, tRCD=5, tRP=5) DDR3 SDRAM F7: DDR3-800 (400MHz @ CL=6, tRCD=6, tRP=6) F8: DDR3-1066 (533MHz @ CL=7, tRCD=7, tRP=7) G8: DDR3-1066 (533MHz @ CL=8, tRCD=8, tRP=8) H9: DDR3-1333 (667MHz @ CL=9, tRCD=9, tRP=9) K0: DDR3-1600 (800MHz @ CL=11, tRCD=11, tRP=11) MA: DDR3-1866 (933MHz @ CL=13, tRCD=13, tRP=13) NB: DDR3-2133 (1067MHz @ CL=14, tRCD=14, tRP=14) Graphics Memory 18: 1.8ns (550MHz) 04: 0.4ns (2500MHz) 20: 2.0ns (500MHz) 05: 0.5ns (2000MHz) 22: 2.2ns (450MHz) 5C: 0.56ns (1800MHz) 25: 2.5ns (400MHz) 06: 0.62ns (1600MHz) 2C: 2.66ns (375MHz) 6A: 0.66ns (1500MHz) 2A: 2.86ns (350MHz) 07: 0.71ns (1400MHz) 33: 3.3ns (300MHz) 7A: 0.77ns (1300MHz) 36: 3.6ns (275MHz) 08: 0.8ns (1200MHz) 40: 4.0ns (250MHz) 09: 0.9ns (1100MHz) 45: 4.5ns (222MHz) 1 : 1.0ns (1000MHz) 50/5A: 5.0ns (200MHz) 1 : 1.1ns (900MHz) 55: 5.5ns (183MHz) 12: 1.25ns (800MHz) 60: 6.0ns (166MHz) 14: 1.4ns (700MHz) 16: 1.6ns (600MHz) SDRAM (Default CL=3) 50: 5.0ns (200MHz CL=3) 60: 6.0ns (166MHz CL=3) 67: 6.7ns 75: 7.5ns PC133 (133MHz CL=3) XDR DRAM A2: 2.4Gbps, 36ns, 16Cycles B3: 3.2Gbps, 35ns, 20Cycles C3: 3.2Gbps, 35ns, 24Cycles C4: 4.0Gbps, 28ns, 24Cycles DS: Daisychain Sample Mobile-SDRAM 60: 166MHz, CL 3 75: 133MHz, CL 3 80: 125MHz, CL 3 1H: 105MHz, CL 2 1L: 105MHz, CL 3 15: 66MHz, CL 2 & 3 Mobile-DDR C3: 133MHz, CL 3 C2: 100MHz, CL 3 C0: 66MHz, CL 3 Note: All Lead-free and Halogen-free products are in compliance with RoHS 2H 2014 samsung.com/dram 1 2 3 4 5 6 7 8 9 10 11 12 13 M X XX T XX X X X X X X XX X AMB Vendor Speed Temp & Power PCB Revision Package Generation SAMSUNG Memory DIMM Data bits DRAM Component Type Depth Number of Banks Bit Organization 1. Memory Module: M 2. DIMM Type 3: DIMM 4: SODIMM 3. Data bits 12: x72 184pin Low Profile Registered DIMM 63: x63 PC100/PC133 μSODIMM with SPD for 144pin 64: x64 PC100/PC133 SODIMM with SPD for 144pin (Intel/JEDEC) 66: x64 Unbuffered DIMM with SPD for 144pin/168pin (Intel/JEDEC) 68: x64 184pin Unbuffered DIMM 70: x64 200pin Unbuffered SODIMM 71: x64 204pin Unbuffered SODIMM 74: x72/ECC Unbuffered DIMM with SPD for 168pin (Intel/JEDEC) 77: x72/ECC PLL + Register DIMM with SPD for 168pin (Intel PC100) 78: x64 240pin Unbuffered DIMM 81: x72 184pin ECC unbuffered DIMM 83: x72 184pin Registered DIMM 90: x72/ECC PLL + Register DIMM 91: x72 240pin ECC unbuffered DIMM 92: x72 240pin VLP Registered DIMM 93: x72 240pin Registered DIMM 95: x72 240pin Fully Buffered DIMM with SPD for 168pin (JEDEC PC133) 4. DRAM Component Type B: DDR3 SDRAM (1.5V VDD) L: DDR SDRAM (2.5V VDD) S: SDRAM T: DDR2 SDRAM (1.8V VDD) 5. Depth 09: 8M (for 128Mb/512Mb) 17: 16M (for 128Mb/512Mb) 16: 16M 28: 128M 29: 128M (for 128Mb/512Mb) 32: 32M 33: 32M (for 128Mb/512Mb) 51: 512M 52: 512M (for 512Mb/2Gb) 56: 256M 57: 256M (for 512Mb/2Gb) 59: 256M (for 128Mb/512Mb) 64: 64M 65: 64M (for 128Mb/512Mb) 1G: 1G 1K: 1G (for 2Gb) 6. # of Banks in Comp. & Interface 1: 4K/64mxRef., 4Banks & SSTL-2 2 : 8K/64ms Ref., 4Banks & SSTL-2 2: 4K/64ms Ref., 4Banks & LVTTL (SDR Only) 5: 8K/64ms Ref., 4Banks & LVTTL (SDR Only) 5: 4Banks & SSTL-1.8V 6: 8Banks & SSTL-1.8V 7. Bit Organization 0: x 4 3: x 8 4: x16 6: x 4 Stack (JEDEC Standard) 7: x 8 Stack (JEDEC Standard) 8: x 4 Stack 9: x 8 Stack 8.Generation A: 2nd Gen. B: 3rd Gen. C: 4th Gen. D: 5th Gen. E: 6th Gen. F: 7th Gen. G: 8th Gen. M: 1st Gen. Q: 17th Gen. samsung.com/dram DRAM MODULE DRAM ORDERING INFORMATION 2H 2014 9.Package E: FBGA QDP (Lead-free & Halogen-free) G: FBGA H: FBGA (Lead-free & Halogen-free) J: FBGA DDP (Lead-free) M: FBGA DDP (Lead-free & Halogen-free) N: sTSOP Q: FBGA QDP (Lead-free) T: TSOP II (400mil) U: TSOP II (Lead-Free) V: sTSOP II (Lead-Free) Z: FBGA (Lead-free) 10. PCB Revision 0: Mother PCB 1: 1st Rev 2: 2nd Rev. 3: 3rd Rev. 4: 4th Rev. A: Parity DIMM S: Reduced PCB U: Low Profile DIMM 11. Temp & Power C: Commercial Temp. (0°C ~ 95°C) & Normal Power L: Commercial Temp. (0°C ~ 95°C) & Low Power 12. Speed CC: (200MHz @ CL=3, tRCD=3, tRP=3) D5: (266MHz @ CL=4, tRCD=4, tRP=4) E6: (333MHz @ CL=5, tRCD=5, tRP=5) F7: (400MHz @ CL=6, tRCD=6, tRP=6) E7: (400MHz @ CL=5, tRCD=5, tRP=5) F8: (533MHz @ CL=7, tRCD=7, tRP=7) G8: (533MHz @ CL=8, tRCD=8, tRP=8) H9: (667MHz @ CL=9, tRCD=9, tRP=9) K0: (800MHz @ CL=10, tRCD=10, tRP=10) 7A: (133MHz CL=3/PC100 CL2) 13. AMB Vendor for FBDIMM 0, 5: Intel 1, 6, 8: IDT 9: Montage Note: All Lead-free and Halogen-free products are in compliance with RoHS DRAM Ordering Information 11 DDR4 SDRAM MODULE ORDERING INFORMATION 1 2 3 4 5 6 7 8 9 10 11 12 M X XX A XX X X X X X X XX Speed Temp & Power PCB Revision Package Component Revision Memory Module DIMM Type Data bits DRAM Component Type Depth # of Banks in Comp. & Interface Bit Organization 1. Memory Module: M 6. # of Banks in Comp. & Interface 2. DIMM Type 3: R/LRDIMM 4: SODIMM 4: 16Banks & POD-1.2V 74: x72 260pin SODIMM 86: x72 288pin Load Reduced DIMM 93: x72 288pin Registered DIMM 10.PCB Revision 0: x 4 3: x 8 0: None 1: 1st Rev. 2: 2nd Rev. 3: 3rd Rev. 4: 4th Rev. 8. Component Revision 4. DRAM Component Type A: DDR4 SDRAM (1.2V VDD) 5.Depth 1G: 1G 2G: 2G 4G: 4G 8G: 8G 1K: 1G (for 8Gb) 2K: 2G (for 8Gb) 12 B: FBGA (Halogen-free & Lead-free, Flip Chip) M: FBGA (Halogen-free & Lead-free, DDP) 7. Bit Organization 3. Data bits DDR4 SDRAM Module Ordering Information 9.Package M: 1st Gen. A: 2nd Gen. B: 3rd Gen. C: 4th Gen. D: 5th Gen. E: 6th Gen. F: 7th Gen. G: 8th Gen. 11.Temp & Power C: Commercial Temp. (0°C ~ 85°C) & Normal Power 12.Speed PB: DDR4-2133 (1066MHz @ CL=15, tRCD=15, tRP=15) 2H 2014 samsung.com/dram 1 2 3 4 5 6 7 8 9 10 11 K 4 A XX XX X X X X X XX Speed Temp & Power Package Type Revision Interface (Vdd, Vddq) #of Internal Banks Samsung Memory DRAM DRAM Type Density Bit Organization 1. Samsung Memory: K 2. DRAM: 4 3. DRAM Type A: DDR4 SDRAM 4.Density 4G: 4Gb 8G: 8Gb 5. Bit Organization 04: x4 08: x8 samsung.com/dram DRAM DDR4 SDRAM MEMORY ORDERING INFORMATION 6. # of Internal Banks 5: 16Banks 7. Interface (Vdd, Vddq) W: POD (1.2V, 1.2V) 8.Revision M: 1st Gen. A: 2nd Gen. B: 3rd Gen. C: 4th Gen. D: 5th Gen. E: 6th Gen. F: 7th Gen. G: 8th Gen. H: 9th Gen. 2H 2014 9. Package Type B: FBGA (Halogen-free & Lead-free, Flip Chip) M: FBGA (Halogen-free & Lead-free, DDP) 10.Temp & Power C: Commercial Temp. (0°C ~ 85°C) & Normal Power 11.Speed PB: DDR4-2133 (1066MHz @ CL=15, tRCD=15, tRP=15) RC: DDR4-2400 (1200MHz @ CL=17, tRCD=17, tRP=17) DDR4 SDRAM Memory Ordering Information 13 New 10nm-class eMMC MAINSTREAM eMMC Density Flash MMC* Class Part Number Seq R/W Perf (MB/s) Random R/W IOPS Package Size (mm) Status 8GB 64Gb*1 5 200 KLM8G1WEPD-B0310** 130/7 5000/600 11.5 x 13.0 x 0.8 MP 16GB 64Gb*2 5 700 KLMAG2WEPD-B0310** 150/12 5000/1200 11.5 x 13.0 x 0.8 MP 32GB 64Gb*4 5 1500 KLMBG4WEBD-B0310** 250/45 TBD 11.5 x 13.0 x 1.0 Sampling Q1'15 64GB 64Gb*8 5 1500 KLMCG8WEBD-B0310** 250/45 TBD 11.5 x 13.0 x 1.0 Sampling Q1'15 128GB 64Gb*16 5 TBD TBD TBD TBD 11.5 x 13.0 x 1.4 Sampling Q1'15 *MMC5.0 is backwards compatible with 4.51 & 4.4 eMMC EVO > 1000 RW IOPS, eMMC PRO > 1000 RW IOPS HIGH-PERFORMANCE eMMC Density Flash MMC* Class Part Number Seq R/W Perf (MB/s) Random R/W IOPS Package Size (mm) Status 4GB 32Gb*1 5 700 KLM4G1FEPD-B0310** TBD TBD 11.0 x 10.0 x 0.8 Sampling Q1'15 8GB 64Gb*1 5 700 KLM8G1GEND-B0310** 160/25 5000/2500 11.5 x 13.0 x 1.0 MP 16GB 64Gb*2 5 2000 KLMAG2GEND-B0310** 230/50 6000/6000 11.5 x 13.0 x 1.0 MP 32GB 64Gb*4 5 2000 KLMBG4GEND-B0310** 250/100 6000/12000 11.5 x 13.0 x 1.0 MP 64GB 64Gb*8 5 2000 KLMCG8GEND-B0310** 250/100 6000/12000 11.5 x 13.0 x 1.0 MP *MMC5.0 is backwards compatible with 4.51 & 4.41 ***Denotes bucket code for latest firmware patch eMMC Key Features • Industry’s fastest eMMC Performance Specs • Fully-managed NAND • Low active & standby power • High density in small form factor (11.5x13mm pkg) 32GB, 64GB Interface Speed Random R/W Sequential R/W • 4GB to 128GB capacities • JEDEC standard MMC 4.51/5.0 • Leading edge 10nm-class NAND Flash eMMC 4.5 200MB/s 3500/2000 IOPS 150/50 MB/s eMMC 5.0 400MB/s 6000/12000 IOPS 250/100 MB/s * Device performance condition: x8 Bus, Cache-On mode, without host overhead. Applications Samsung offers a compact eMMC solution to fit the needs of any mobile application category, ranging from high-end tablets and smartphones to 4K gaming devices , set-top boxes, and Internet of Things (iOT) devices. Industry-Leading Smartphone and Tablet Design Specifications • Density: 4GB to 128GB • Class: 200/700/1500/2000* • Flash: 32Gb/64Gb • Package Type: FBGA • Package Size: 11x10mm, 11.5x13mm • eMMC: 4.5/5.0 Simple Block Diagram LTE Modem uSD Slot AP + DRAM (POP) Samsung eMMC * Class = Random Write IOPS 14 Mainstream eMMC & High-Performance eMMC 2H 2014 samsung.com/flash SOLID STATE DRIVES (SSD) Drive Type Drive Name CM851 Interface SATA III - 6Gb/s Form Factor mSATA (MZM) M.2 (MZA) Connector Mini PCIe M.2 Power-loss Protection No Write Endurance PC Workload Density Part Number 16GB MZAPF016HCDD-00000 32GB 64GB MZMPF032HCFV-00000 MZAPF032HCFV-00000 MZMPF032HCFV-00000 128GB FLASH - SSD MZMTE128HMGR-00000 MZNTE128HMGR-00000 MZ7TE128HMGR-00000 MZMTE256HMHP-00000 Client PC/ Embedded PM851 SATA III - 6Gb/s mSATA (MZM) M.2 (MZN) 2.5" (MZ7) Mini PCIe M.2 SFF-8223 No PC Workload 256GB MZNTE256HMHP-00000 MZ7TE256HMHP-00000 MZMTE512HMHP-00000 512GB MZNTE512HMJH-00000 MZ7TE512HMHP-00000 XP941 PM853T Data Center SM843Tn SV843 SM1635 PCIe - SATAe SATA III - 6Gb/s SATA III - 6Gb/s SATA III - 6Gb/s SAS - 12Gb/s M.2 M.2 2.5" 7mmT 2.5" 7mmT 2.5" 7mmT 2.5" 15mmT SFF-8223 SFF-8223 SFF-8223 SFF-8680 No Yes Yes Yes Yes Enterprise PC Workload 0.3 DWPD 1.8 DWPD 3.6 DWPD 10 DWPD 7.0 DWPD XS1715 samsung.com/flash PCIe - NVMe 2.5" 15mmT 2H 2014 SFF-8639 Yes 5.4 DWPD 1024GB MZMTE1T0HMJH-00000 128GB MZHPU128HCGM-00004 256GB MZHPU256HCGL-00004 512GB MZHPU512HCGL-00004 240GB MZ7GE240HMGR-00003 480GB MZ7GE480HMHP-00003 960GB MZ7GE960HMHP-00003 120GB MZ7WD120HCFV-00003 240GB MZ7WD240HCFV-00003 480GB MZ7WD480HCGM-00003 480GB MZ7WD480HMHP-00003 960GB MZ7WD960HMHP-00003 400GB MZIES400HMGR-00003 800GB MZIES800HMHP-00003 1600GB MZIES1T6HMJH-00003 400GB MZWEI400HAGM-00003 800GB MZWEI800HAGM-00003 1600GB MZWEI1T6HAGP-00003 Solid State Drives 15 Samsung has a portfolio of eMCP products for a variety of devices, such as mobile phones and tablets. The following illustration shows Samsung’s lineup of eMCP memory solutions, which can be deployed in almost any application. Samsung eMCP product suite with different densities and types of Mobile DRAM and eMMC eMCP = eMMC + LPDDR2 or LPDDR3 64GB 32GB RO M 16GB 8GB 4GB 2GB 4G 6G 8G 12G 16G 24G R AM 16 Multi-Chip Packages 2H 2014 samsung.com/mcp eMCP: eMMC + LPDDR3 Memory eMMC Density 4GB eMMC & MDRAM 8GB 16GB DRAM Density/Organization Voltage (eMMC-DRAM) Package 4Gb (x32) 3.3V/1.8V - 1.8V/1.2V 221FBGA 11.5x13mm 6Gb (x32) 3.3V/1.8V - 1.8V/1.2V 221FBGA 11.5x13mm 4Gb*2 (x32, 1CH, 2CS) 3.3V/1.8V - 1.8V/1.2V 221FBGA 11.5x13mm 6Gb*2 (x32, 1CH, 2CS) 3.3V/1.8V - 1.8V/1.2V 221FBGA 11.5x13mm 4Gb*2 (x32, 1CH, 2CS) 3.3V/1.8V - 1.8V/1.2V 221FBGA 11.5x13mm 4Gb*4 (x32, 1CH, 2CS) 3.3V/1.8V - 1.8V/1.2V 221FBGA 11.5x13mm 6Gb*4 (x32, 1CH, 2CS) 3.3V/1.8V - 1.8V/1.2V 221FBGA 11.5x13mm eMCP: eMMC + LPDDR2 eMMC Density DRAM Density/Organization Voltage (eMMC-DRAM) Package eMMC & MDRAM 4GB 4Gb (x32) 3.3V/1.8V - 1.8V/1.2V 162FBGA 11.5x13mm MCPs Memory samsung.com/mcp 2H 2014 Multi-Chip Packages 17 Samsung Solid State Drives SATA STANDARD DATA CENTER SERIES Read-Intensive Environments DELUXE ENTERPRISE SERIES High-Write Environments SAS PCIe ENTERPRISE STORAGE SERIES High Redundancy Environments EXTREME PERFORMANCE SERIES Data Cache Environments Samsung PM853T Samsung SV843 Samsung SM1635 Samsung XS1715 2.5 inches 2.5 inches 2.5 inches 2.5 inches 240/480/960 480/960 400/800/1600 400/800/1600 Serial ATA 3 (6 Gb/s) Serial ATA 3 (6 Gb/s) SAS 3 (12 Gb/s) PCIe Gen3 x4 1.5 Million Hours 2.0 Million Hours 2.0 Million Hours 2.0 Million Hours Uncorrectable Bit Error Rate (UBER) 1x1016 1x1017 1x1017 1x1017 Power Consumption (Active) 3.4W 2.9W 11.0W 25.0W Power Consumption (Idle) 1.1W 1.0W 4.0W 8.0W Random Read Up to 87,000 IOPS Up to 88,000 IOPS Up to 215,000 IOPS Up to 750,000 IOPS Random Write Up to 15,000 IOPS (28% O/P: up to 35,000 IOPS) Up to 14,000 IOPS (28% O/P: up to 35,000 IOPS) Up to 47,000 IOPS Up to 115,000 IOPS Sequential Read Up to 530 MB/s Up to 530 MB/s Up to 1380 MB/s Up to 3000 MB/s Sequential Write Up to 410 MB/s Up to 430 MB/s Up to 1300 MB/s Up to 1400 MB/s Terabytes Written (TBW) Up to 665 TBW Up to 0.3 DWPD Up to 6,728 TBW Up to 3.6 DWPD Up to 29,200 TBW Up to 10 DWPD Up to 16,700 TBW Up to 7 DWPD Physical Dimensions 100 x 70 x 7mm 100 x 70 x 7mm 100 x 70 x 15mm 100 x 70 x 15mm 63g 62g 140g 210g Form Factor Capacity (GB) Host Interface MTBF Weight Which SSD is right for you? For more information, email: [email protected] 18 Solid State Drives 2H 2014 samsung.com/flash-ssd samsungodd.com SOLID STATE DRIVES (SSD) Drive Type Drive Name CM851 Interface SATA III - 6Gb/s Form Factor mSATA (MZM) M.2 (MZA) Connector Mini PCIe - M.2 Power-loss Protection No Write Endurance PC Workload Density Part Number 16GB MZAPF016HCDD-00000 32GB 64GB MZMPF032HCFV-00000 MZAPF032HCFV-00000 MZMPF032HCFV-00000 MZMTE128HMGR-00000 128GB MZNTE128HMGR-00000 MZ7TE128HMGR-00000 MZMTE256HMHP-00000 Client PC/ Embedded PM851 SATA III - 6Gb/s mSATA (MZM) M.2 (MZN) 2.5" (MZ7) Mini PCIe M.2 SFF-8223 No PC Workload 256GB MZNTE256HMHP-00000 MZ7TE256HMHP-00000 MZMTE512HMHP-00000 512GB MZNTE512HMJH-00000 XP941 PM853T Data Center SM843Tn SV843 SM1635 PCIe - SATAe SATA III - 6Gb/s SATA III - 6Gb/s SATA III - 6Gb/s SAS - 12Gb/s M.2 2.5" 7mmT 2.5" 7mmT 2.5" 7mmT 2.5" 15mmT M.2 SFF-8223 SFF-8223 SFF-8223 SFF-8680 No Yes Yes Yes Yes Enterprise PC Workload 0.3 DWPD 1.8 DWPD 3.6 DWPD 10 DWPD 7.0 DWPD XS1715 PCIe - NVMe samsung.com/flash-ssd 2.5" 15mmT samsungodd.com SFF-8639 2H 2014 Yes 5.4 DWPD 1024GB MZMTE1T0HMJH-00000 128GB MZHPU128HCGM-00004 256GB MZHPU256HCGL-00004 512GB MZHPU512HCGL-00004 240GB MZ7GE240HMGR-00003 480GB MZ7GE480HMHP-00003 960GB MZ7GE960HMHP-00003 120GB MZ7WD120HCFV-00003 240GB MZ7WD240HCFV-00003 480GB MZ7WD480HCGM-00003 480GB MZ7WD480HMHP-00003 960GB MZ7WD960HMHP-00003 400GB MZIES400HMGR-00003 800GB MZIES800HMHP-00003 1600GB MZIES1T6HMJH-00003 400GB MZWEI400HAGM-00003 800GB MZWEI800HAGM-00003 1600GB MZWEI1T6HAGP-00003 Solid State Drives STORAGE MZ7TE512HMHP-00000 19 Blu-ray SLIM Interface Speed Type Loading Model SATA BD Writer 6X Slim Tray SN-506BB Blu-ray Writer SLIM EXTERNAL Interface Speed Type Loading Model USB 2.0 BD Writer 6X Slim Tray SE-506CB Interface Speed Type Loading Model SATA DVD Write 24X H/H Tray SH-224FB Interface Speed Type Loading Model SATA DVD Read 18X H/H Tray SH-118CB Speed Type Loading Model DVD Write 8X Slim (12.7mm) Tray SN-208FB DVD Write 8X Slim (9.5mm) Tray SU-208GB DVD Write 8X Slim (9.0mm) Tray SU-228GB Model DVD-W H/H DVD-ROM H/H DVD-W SLIM Interface SATA DVD-W SLIM EXTERNAL Interface Speed Type Loading USB 2.0 DVD Write 8X Ultra Slim Tray 20 Optical Disc Drives 2H 2014 SE-218GN SE-208GB samsung.com/flash-ssd samsungodd.com Public Information Display (PID) Product Classification Outdoor PID » High Brightness » Full High Definition » 110°C Clearing Point Super Narrow Bezel (SNB)/ Ultra Narrow Bezel (UNB) » Video Wall » UNB: 3.9mm A-to-A » SNB: 5.9mm A-to-A » 500 - 700 nits Brightness » AGAR Surface Treatment Indoor PID » Narrow Bezel » 40"/46"/55"/75" » 700 nits Brightness E-Board PID » Landscape Orientation » 55"/70"/82" Edge LED » AGAR Surface Treatment Why PID instead of TV? COMMERCIAL (PID) CONSUMER (TV) WARRANTY 18 months to 2 years 90 days to 1 year RELIABILITY Public environments 20+ hours daily duty cycle Variety of temperatures & location 5-8 hour daily duty cycle Designed for in-home use in controlled environment In-home living room PRODUCTION LIFECYCLE 24-36 months 12-15 months PICTURE QUALITY Designed to resist image retention LCD backlight covers a wider color spectrum necessary for PC source integration, giving better picture quality AGAR coating for public viewing 120Hz / 240Hz for full-motion video Designed for TV signals Gloss surface treatment LOCATION Most models portrait capable Can only be oriented in landscape mode Product Segmentation HEAVY USE SNB / UNB Indoor PID E-Board PID Restaurant Retail Digital Signage • QSR Menu Boards • Outdoor TV • Wayfinding • Outdoor Mall • Street Furniture • Mobile Signage Professional Indoor Events Billboard • Control Room • Simulation • Scoreboard • Sports Broadcasting • Dynamic Signage • Flagship Retail Entertainment Transportation Communication Rental • Casino • Theatre • Airport • Train/Bus Station • Conference Room • Rental • Staging Commercial Education Hospitality • Kiosk • Conference Systems • Interactive FPD • Hotel Signage DISPLAYS Outdoor PID LIGHT USE Product Segmentation Suggested Run Time Brightness Usage Applications Value Tier 20+ hours 2500-5000 nits Heavy Outdoor Premium commercial range 20+ hours 500-700 nits Heavy Video Walls Premium commercial range 2 years Normal 3.9mm - 5.9mm A-to-A Narrow 20+ hours 600/700 nits Medium Semi-Outdoor Mid-price range 18 months Normal 12 hours 450 nits Daily Indoor, e-Board High-value commercial range Type Class Warranty Bezel Outdoor PID High Bright, Wide Temp 2 years SNB / UNB Super / Ultra Narrow Bezel 2 years Indoor PID Indoor Commercial Panels E-Board Value, Large Format samsungdisplay.com 2H 2014 DID Panel Lineup, Tablets & Monitors 21 SAMSUNG PUBLIC INFORMATION DISPLAY (PID) PANEL LINEUP Type Outdoor PID SNB / UNB Indoor PID E-Board Model Size Model Bezel Resolution Backlight Brightness (typical) Contrast Ratio Response Time Frequency MP* Comment LTI460HZ01 46" FHD Narrow D-LED 5,000 nits 4,000:1 8ms 60Hz Now High Bright, Hi Temp LC, 1/4λ Pol. LTI460HF01 46" FHD Narrow D-LED 2,500 nits 5,000:1 8ms 60Hz Q4, '14 High Bright, Hi Temp LC, 1/4λ Pol. LTI550HF04 55" FHD Narrow D-LED 2,500 nits 5,000:1 8ms 60Hz Q4, '14 High Bright, Hi Temp LC, 1/4λ Pol. LTI750HF01 75" FHD Narrow D-LED 2,500 nits 5,000:1 8ms 60Hz Q4, '14 High Bright, Hi Temp LC, 1/4λ Pol. LTI460HN01 46" FHD Super narrow D-LED 700 nits 3,000:1 8ms 60Hz Now 5.9mm Active to Active, LED LTI460HN09 46" FHD Super narrow D-LED 500 nits 3,000:1 8ms 60Hz Now 5.9mm Active to Active, LED LTI460HN10 46" FHD Ultra narrow D-LED 700 nits 3,000:1 8ms 60Hz Now 3.9mm Active to Active, LED LTI460HN12 46" FHD Ultra narrow D-LED 500 nits 3,000:1 8ms 60Hz Q4, '14 3.9mm Active to Active, LED LTI550HN01 55" FHD Super narrow D-LED 700 nits 3,000:1 8ms 60Hz Now 5.9mm Active to Active, LED LTI550HN08 55" FHD Super narrow D-LED 500 nits 3,000:1 8ms 60Hz Now 5.7mm Active to Active, LED LTI550HN09 55" FHD Ultra narrow D-LED 700 nits 3,000:1 8ms 60Hz Now 3.9mm Active to Active, LED LTI550HN10 55" FHD Ultra narrow D-LED 500 nits 3,000:1 8ms 60Hz Q4, '14 3.9mm Active to Active, LED LTI400HA10 40" FHD Narrow eLED 700 nits 3,000:1 8ms 60Hz Now eLED, Landscape / Portrait LTI460HN08 46" FHD Narrow eLED 700 nits 4,000:1 8ms 60Hz Now eLED, Landscape / Portrait LTI550HN06 55" FHD Narrow eLED 700 nits 4,000:1 8ms 60Hz Now eLED, Landscape / Portrait LTI550HN07 55" FHD Narrow eLED 450 nits 4,000:1 8ms 60Hz Now E-Board; Landscape/Portrait NEW 75" FHD Normal D-LED 500 nits 3,500:1 8 ms 120Hz Q4, '14 120Hz, Landscape / Portrait NEW 75" UHD Normal D-LED 500 nits 3,500:1 8 ms 240Hz Q4, '14 240Hz, Landscape / Portrait LTI700HA02 70" FHD Normal eLED 400 nits 4,000:1 8ms 60Hz Now E-Board; Landscape/Portrait LTI820HA01 82" FHD Normal eLED 450 nits 3,000:1 8ms 60Hz Now E-Board; Landscape mode only TABLETS Size PN 7" 8.0" Open Cell 10.1" Mode Resolution H(RGB) V Aspect Ratio PPI Brightness (nits) MP LTN070AL01 PLS WXGA 1280 800 16:10 216 400 EOL LTL070NL01 PLS WSVGA 1024 600 16:9 170 400 Now LTL080AL01 PLS WXGA 1280 800 16:9 189 Open Cell Now LTL101AL06 PLS WXGA 1280 800 16:10 149 400 Now LTL101DL03 PLS WQXGA 2560 1600 16:10 300 370 Now Mode Resolution H(RGB) V Aspect Ratio PPI Brightness (nits) MP MONITORS Size 23" 27" 31.5" 22 PN LTM230HL07 PLS FHD 1920 1080 16:9 96 300 Now LTM270HT03 TN FHD 1920 1080 16:9 82 300 Now LTM270DL02 PLS QHD 2560 1440 16:9 109 300 Now LTM270HL02 PLS FHD 1920 1080 16:9 82 350 Now LTM315FL01 PLS UHD 3840 2160 16:9 140 350 Now DID Panel Lineup, Tablets & Monitors 2H 2014 samsungdisplay.com Contacts Feel free to contact your local distributor or sales representative with any Samsung sales inquiries. Adelsa | www.adetronics.com.mx PRODUCTS TERRITORY ADDRESS MAIN PHONE FAX Memory SLSI LCD Mexico Guadalajara Monterrey Cd. Juarez Reynosa MEXICO Hacienda Corralejo #80 Bosque de Echegaray Naucalpan, Mexico 53310 52-555-560-5002 52-555-363-1010 GUADALAJARA El Rosario #643 Jardines de Los Arcos Guadalajara, Jal, CP 44500 52-333-122-3054 52-333-647-9611 MONTERREY Lince #113 Cumbre Elite 8vo. Sector Monterrey, NL. CP 64349 52-818-214-0011 52-818-214-0012 CD. JUAREZ Rio Magdalena #4425 Fovissste Chamizal Cd. Juarez, CH, CP 32310 52-656-613-3517 REYNOSA Bravo #1040 Centro Reynosa, Tam, CP 88500 52-899-922-5540 ATMI Sales | www.atmisales.com MAIN PHONE ADDRESS MAIN PHONE FAX Memory SLSI LCD British Columbia Washington Oregon OREGON 4900 S.W. Griffith Drive Suite 253 Beaverton, OR 97005 1-800-898-2446 503-643-8307 503-643-4364 WASHINGTON 8581 154th Ave. NE Redmond WA 98052 425-869-7636 425-869-9841 CONTACTS PRODUCTS samsung.com/us/oem-solutions 2H 2014 Contacts 23 Bear VAI Technology | www.bearvai.com PRODUCTS TERRITORY ADRRESS MAIN PHONE FAX Memory SLSI LCD Michigan Ohio Western Pennsylvania Kentucky MAIN OFFICE - BRECKSVILLE, OHIO 6910 Treeline Drive Unit H Brecksville, OH 44141 440-526-1991 440-526-5426 MAIN OFFICE - INDIANA 11451 Overlook Drive Fishers, IN 46037 440-832-7637 317-845-8650 SOUTHERN OHIO OFFICES 2676 Longwood Dr. Beavercreek, OH 45431 440-526-1991 440-526-5426 58 E California Ave Columbus, OH 43202 440-526-1991 440-526-5426 PITTSBURGH OFFICE 1975 Menold Dr. Allison Park, PA 15101 440-526-1991 412-364-8776 MICHIGAN OFFICES 5506 Alpine Ridge Stevensville, MI 49127 440-526-1991 440-526-5426 FAX 17426 Willow Ridge Northville, MI 48168 312 Woodward Ave Rochester, MI 48307 600 Broadway Ave NW #617 Grand Rapids, MI 49504 3120 Edgewood Park Dr. Commerce Twp, MI 48382 Core Sales, Inc. | www.coresales.com PRODUCTS TERRITORY ADDRESS MAIN PHONE Memory SLSI LCD Chicago Milwaukee 901 Warrenville Road Suite 211 Lisle, IL 60532 847-843-8888 Crestone Technology Group | www.crestonegroup.com PRODUCTS TERRITORY ADDRESS MAIN PHONE FAX Memory SLSI LCD Idaho Montana Wyoming Utah Colorado COLORADO 7108 S. Alton Way Building L Centennial, CO 80112 303-280-7202 720-482-2220 Customer 1st | UTAH (home office based) www.customer1st.com PRODUCTS TERRITORY ADDRESS MAIN PHONE FAX Memory SLSI LCD North Dakota South Dakota Nebraska Kansas Minnesota Iowa Missouri Wisconsin (exclude Milwaukee) Illinois (exclude Chicago) MINNESOTA 2950 Metro Drive Suite 101 Bloomington, MN 55425 952-851-7909 952-851-7907 24 Contacts KANSAS 2111 E. Crossroad Lane #202 Olathe, KS 66062 2H 2014 samsung.com/us/oem-solutions InTELaTECH | www.intelatech.com PRODUCTS TERRITORY ADDRESS MAIN PHONE FAX Memory SLSI Canada (exclude BC) ONTARIO - CANADA 5225 Orbitor Drive Suite 2 905-629-0082 905-624-6909 905-629-1795 905-629-8910 21 Concourse Gate Suite 12 Ottawa, ONT K2E 7S4 905-629-0082 613-221-9160 ALBERTA - CANADA 1925-18th Ave NE Suite #115 Calgary, Alberta T2E 7T8 905-629-0082 403-686-6926 QUEBEC - CANADA 620 St-Jean Blvd Suite 202 Pointe Claire Quebec H9R 3K2 905-629-0082 905-629-0082 BRITISH COLUMBIA - CANADA 5811 Cooney Road Suite 305, South Tower Vancouver, BC V5X 3M1 905-629-0082 905-629-1795 I-Squared Incorporated | www.isquared.com PRODUCTS TERRITORY ADDRESS MAIN PHONE FAX Memory SLSI LCD Northern California Nevada 2635 N. 1st Street Suite 128 San Jose, CA 95134 408-988-3400 408-988-2079 1250 B Street Petaluma, CA 94952 Neptune Electronics (necco) | www.neccoelect.com PRODUCTS TERRITORY ADDRESS MAIN PHONE FAX Memory SLSI LCD Southern New York Eastern Pennsylvania West Virginia Virginia Maryland Delaware New Jersey Washington D.C. 11 Oval Drive Suite 169 Islandia, NY 11749 631-234-2525 631-234-2707 MAIN PHONE FAX New Elpis, Inc. | www.newelpis.com TERRITORY ADDRESS LCD Canada (exclude BC) 2550 Matheson Blvd. E. Unit 129 Mississauga, ONT Canada L4W 4Z1 905-275-4109 CONTACTS PRODUCTS samsung.com/us/oem-solutions 2H 2014 Contacts 25 New Tech Solutions PRODUCTS TERRITORY ADDRESS MAIN PHONE FAX Memory SLSI LCD Maine New Hampshire Vermont Massachusetts Rhode Island Connecticut 26 Ray Avenue Burlington, MA 01803 781-229-8888 585-204-2183 781-229-1614 MAIN PHONE FAX 770-209-9242 678-591-6753 770-209-9245 Rep One Associates, Inc. | www.repone.com PRODUCTS TERRITORY ADDRESS Memory SLSI LCD North Carolina South Carolina Georgia Alabama MIssissippi Florida ALABAMA 303 Williams Ave Suite 1011 Huntsville, AL 35801 GEORGIA 3000 Langford Rd Bldg 300 Norcross, GA 30071 NORTH CAROLINA 5540 Centerview Dr Suite 200 Raleigh, NC 27606 919-424-3866 10800 Sikes Place Suite 300 Charlotte, NC 28277 704-846-5744 FLORIDA (home office based) Tech Coast Sales | www.tc-sales.com PRODUCTS TERRITORY ADDRESS MAIN PHONE FAX Memory SLSI LCD Arizona/New Mexico Los Angeles, CA Orange County Area, CA San Diego, CA Southern Nevada MAIN OFFICE 23121 Verdugo Drive Suite 101 Laguna Hills, CA 92653 949-305-6869 949-305-4073 818-715-1012 818-597-1770 West Associates | www.westassociates.com PRODUCTS TERRITORY ADDRESS MAIN PHONE FAX Memory SLSI LCD Oklahoma Texas Louisiana Arkansas AUSTIN / SAN ANTONIO 4100 Duval Rd Bld 1, Ste 102 Austin, TX 78759 512-343-1199 512-343-1922 DALLAS / OKLAHOMA / ARKANSAS 2745 Dallas Pkwy Ste 460 Plano, TX 75093 972-680-2800 972-699-0330 HOUSTON / VALLEY / LOUISIANA 24624 Interstate 45 North Ste 200 Spring, TX 77386 512-343-1199 512-343-1922 To access our online sales portal, visit: https://smarttools.ssi.samsung.com For all product information please visit: samsung.com/us/oem-solutions 26 Contacts 2H 2014 samsung.com/us/oem-solutions CONTACTS Notes samsung.com/us/oem-solutions 2H 2014 Contacts 27 M e mo r y Displays, and Stora SD Flash - S T PRODUTCIO N C E L E S GUIDE ge contacts Displays Storage MCP 2H 2014 Samsung Semiconductor, Inc. 601 McCarthy Boulevard Milpitas, CA 95035 samsung.com/us/oem-solutions Disclaimer: The information in this publication has been carefully checked and is believed to be accurate at the time of publication. Samsung assumes no responsibility, however, for possible errors or omissions, or for any consequences resulting from the use of the information contained herein. Samsung reserves the right to make changes in its products or product specifications with the intent to improve function or design at any time and without notice and is not required to update this documentation to reflect such changes. This publication does not convey to a purchaser of semiconductor devices described herein any license under the patent rights of Samsung or others. Samsung makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Samsung assume any liability arising out of the application or use of any product or circuit and specifically disclaims any and all liability, including without limitation any consequential or incidental damages. Copyright 2014. Samsung and Samsung Semiconductor, Inc. are registered trademarks of Samsung Electronics, Co., Ltd. Ultrabooks is a trademark of Intel Corporation. All other names and brands may be claimed as the property of others. The appearance of all products, dates, figures, diagrams and tables are subject to change at any time, without notice. BR-14-ALL-001 | Printed 10/14