INTERSIL RHRD4120

RHRD4120, RHRD4120S
Data Sheet
January 2000
File Number
3626.4
4A, 1200V Hyperfast Diodes
Features
The RHRD4120 and RHRD4120S are hyperfast diodes with
soft recovery characteristics (trr < 60ns). They have half the
recovery time of ultrafast diodes and are silicon nitride
passivated ion-implanted epitaxial planar construction.
• Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . . . <60ns
These devices are intended for use as freewheeling/clamping
diodes and rectifiers in a variety of switching power supplies
and other power switching applications. Their low stored
charge and hyperfast soft recovery minimize ringing and
electrical noise in many power switching circuits, reducing
power loss in the switching transistors
• Avalanche Energy Rated
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .1200V
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
Formerly development type TA49056.
• General Purpose
Ordering Information
PART NUMBER
• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175oC
PACKAGE
BRAND
RHRD4120
TO-251
HR4120
RHRD4120S
TO-252
HR4120
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in the tape and reel, i.e.,
RHRD4120S9A.
Packaging
JEDEC STYLE TO-251
ANODE
CATHODE
CATHODE
(FLANGE)
Symbol
JEDEC STYLE TO-252
K
CATHODE
(FLANGE)
CATHODE
ANODE
A
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV)
(TC = 147.5oC)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IFRM
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Avalanche Energy (See Figures 9 and 10) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ
Maximum Lead Temperature for Soldering
(Leads at 0.063 in. (1.6mm) from case for 10s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG
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RHRD4120, RHRD4120S
1200
1200
1200
4
UNITS
V
V
V
A
8
A
40
A
50
10
-65 to 175
W
mJ
oC
300
260
oC
1-888-INTERSIL or 321-724-7143 | Copyright
oC
© Intersil Corporation 2000
RHRD4120, RHRD4120S
TC = 25oC, Unless Otherwise Specified
Electrical Specifications
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNITS
IF = 4A
-
-
3.2
V
IF = 4A, TC = 150oC
-
-
2.6
V
VR = 1200V
-
-
100
µA
VR = 1200V, TC = 150oC
-
-
500
µA
IF = 1A, dIF/dt = 100A/µs
-
-
60
ns
IF = 4A, dIF/dt = 100A/µs
-
-
70
ns
ta
IF = 4A, dIF/dt = 100A/µs
-
40
-
ns
tb
IF = 4A, dIF/dt = 100A/µs
-
25
-
ns
QRR
IF = 4A, dIF/dt = 100A/µs
-
140
-
nC
VR = 10V, IF = 0A
-
15
-
pF
-
-
3
oC/W
VF
IR
trr
CJ
RθJC
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
trr = Reverse recovery time (See Figure 8), summation of ta + tb.
ta = Time to reach peak reverse current (See Figure 8).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 8).
QRR = Reverse recovery charge.
CJ = Junction Capacitance.
RθJC = Thermal resistance junction to case.
pw = pulse width.
D = duty cycle.
Typical Performance Curves
100
175oC
175oC
10
IR , REVERSE CURRENT (µA)
IF, FORWARD CURRENT (A)
20
100oC
25oC
1
10
1
100oC
0.1
0.01
25oC
0.5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
VF, FORWARD VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
2
0.001
0
200
400
600
800
1000
1200
VR , REVERSE VOLTAGE (V)
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
RHRD4120, RHRD4120S
Typical Performance Curves
(Continued)
75
100
TC = 25oC, dIF/dt = 100A/µs
t , RECOVERY TIMES (ns)
t , RECOVERY TIMES (ns)
60
trr
45
ta
30
tb
15
0
0.5
80
trr
60
ta
40
tb
20
0
4
1
TC = 100oC, dIF/dt = 100A/µs
0.5
1
t, RECOVERY TIMES (ns)
TC = 175oC, dIF/dt = 100A/µs
100
trr
75
ta
50
tb
25
0
0.5
FIGURE 4. trr, ta AND tb CURVES vs FORWARD CURRENT
IF(AV) , AVERAGE FORWARD CURRENT (A)
FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENT
125
4
IF, FORWARD CURRENT (A)
IF, FORWARD CURRENT (A)
5
4
DC
3
SQ. WAVE
2
1
0
125
4
1
135
145
155
165
TC , CASE TEMPERATURE (oC)
IF, FORWARD CURRENT (A)
FIGURE 5. trr, ta AND tb CURVES vs FORWARD CURRENT
FIGURE 6. CURRENT DERATING CURVE
Test Circuits and Waveforms
VGE AMPLITUDE AND
RG CONTROL dIF/dt
t1 AND t2 CONTROL IF
L
DUT
RG
CURRENT
SENSE
IF
+
VGE
IGBT
t1
-
VDD
dIF
dt
trr
ta
tb
0
0.25 IRM
t2
IRM
FIGURE 7. trr TEST CIRCUIT
3
FIGURE 8. trr WAVEFORMS AND DEFINITIONS
175
RHRD4120, RHRD4120S
Test Circuits and Waveforms
(Continued)
IMAX = 1A
L = 20mH
R < 0.1Ω
EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
VAVL
L
CURRENT
SENSE
R
+
VDD
IL
IL
I V
Q1
VDD
DUT
t0
FIGURE 9. AVALANCHE ENERGY TEST CIRCUIT
t1
t2
t
FIGURE 10. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
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