IRF234, IRF235, IRF236, IRF237 Semiconductor 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 8.1A and 6.5A, 275V and 250V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. • rDS(ON) = 0.45Ω and 0.68Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • 275V, 250V DC Rated - 120V AC Line System Operation Formerly developmental type TA17413. • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER PACKAGE G BRAND IRF234 TO-204AA IRF234 IRF235 TO-204AA IRF235 IRF236 TO-204AA IRF236 IRF237 TO-204AA IRF237 S NOTE: When ordering, include the entire part number. Packaging JEDEC TO-204AA DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1997 5-1 File Number 2208.3 IRF234, IRF235, IRF236, IRF237 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRF234 IRF235 IRF236 IRF237 UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . VDS 250 250 275 275 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . VDGR 250 250 275 275 V Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID 8.1 6.5 8.1 6.5 A TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID 5.1 4.1 5.1 4.1 A Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . IDM 32 26 32 26 A Gate to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 ±20 ±20 ±20 V Maximum Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . PD 75 75 75 75 W Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 0.6 0.6 0.6 W/oC Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . EAS 180 180 180 180 mJ Operating and Storage Temperature . . . . . . . . . . . . . TJ, TSTG -55 to 150 -55 to 150 -55 to 150 -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . .Tpkg 300 260 300 260 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER MIN TYP MAX UNITS IRF234, IRF235 250 - - V IRF236, IRF237 275 - - V 2.0 - 4.0 V VDS = Rated BVDSS, VGS = 0V - - 25 µA VDS = 0.8 x Rated BVDSS, VGS = 0V TJ =125oC - - 250 µA 8.1 - - A 6.5 - - A - - ±100 nA IRF234, IRF236 - 0.32 0.45 Ω IRF235, IRF237 - 0.48 0.68 Ω 2.9 4.3 - S - 9.1 14 ns - 23 35 ns - 31 47 ns - 19 29 ns - 24 35 nC - 5.1 - nC - 12 - nC Drain to Source Breakdown Voltage Gate to Threshold Voltage Zero-Gate Voltage Drain Current On-State Drain Current (Note 2) SYMBOL BVDSS TEST CONDITIONS VGS = 0V, ID = 250µA, (Figure 10) VGS(TH) VGS = VDS, ID = 250µA IDSS ID(ON) IRF234, IRF236 VDS > ID(ON) x rDS(ON)MAX, VGS = 10V, (Figure 7) IRF235, IRF237 Gate to Source Leakage Drain to Source On-State Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain “Miller” Charge IGSS rDS(ON) gfs td(ON) tr td(OFF) VGS = ±20V VGS = 10V, ID = 4.1A, (Figures 8, 9) VDS ≥ 50V, ID = 4.1A, (Figure 12) VDD = 125V, ID ≈ 8.1A, RG = 12Ω, RL = 1.1Ω VGS = 10V, (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature tf Qg(TOT) VGS = 10V, ID = 8.1A, VDS = 0.8 x Rated BVDSS IG(REF) = 1.5mA, (Figures 14, 19, 20) Gate Charge is Essentially Independent of Qgs Operating Temperature Qgd 5-2 IRF234, IRF235, IRF236, IRF237 Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Input Capacitance CISS VGS = 0V, VDS = 25V, f = 1.0MHz, (Figure 11) - 600 - pF Output Capacitance COSS - 180 - pF Reverse Transfer Capacitance CRSS - 52 - pF - 5.0 - nH - 12.5 - nH - - 1.67 oC/W - - 30 oC/W MIN TYP MAX UNITS - - 8.1 A - - 32 A - - 2.0 V Internal Drain Inductance LD Internal Source Inductance LS Measured Between the Contact Screw on the Flange that is Closer to Source and Gate Pins and the Center of Die Modified MOSFET Symbol Showing the Internal Devices Inductances D LD Measured From The Source Lead, 6mm (0.25in) From the Flange and the Source Bonding Pad G LS S Therma Resistance Junction to Case RθJC Therma Resistance Junction to Ambient RθJA Free Air Operation Source to Drain Diode Specifications PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SYMBOL IS ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode D G S Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovered Charge VSD TJ = 25oC, ISD = 8.1A, VGS = 0V, (Figure 13) trr TJ = 25oC, ISD = 8.1A, dISD/dt = 100A/µs 92 180 390 ns QRR TJ = 25oC, ISD = 8.1A, dISD/dt = 100A/µs 0.63 1.3 2.7 µC NOTES: 2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 50V, starting TJ = 25oC, L = 4.5mH, RG = 25Ω, peak IAS = 8.1A. See Figures 15, 16. 5-3 IRF234, IRF235, IRF236, IRF237 Typical Performance Curves Unless Otherwise Specified POWER DISSIPATION MULTIPLIER 1.2 10 ID, DRAIN CURRENT (A) 1.0 0.8 0.6 0.4 0.2 0 8 IRF234, IRF236 6 IRF235, IRF237 4 2 0 0 50 100 150 25 50 TC, CASE TEMPERATURE (oC) 75 125 100 150 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE ZθJC, TRANSIENT THERMAL IMPEDANCE (oC/W) 10 1 0.5 0.2 PDM 0.1 0.1 0.05 t1 t2 t2 0.02 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC + TC SINGLE PULSE 0.01 10-5 10-4 0.1 10-3 10-2 t1, RECTANGULAR PULSE DURATION (s) 1 10 FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE 100 15 10 IRF234, 236 100µs IRF235, 237 1ms OPERATION IN THIS REGION IS LIMITED BY rDS(ON) 1 TC = 25oC TJ = MAX RATED SINGLE PULSE 0.1 1 VGS = 10V 10ms IRF234, IRF235 DC IRF236, IRF237 100 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 80µs PULSE TEST VGS = 8V 10µs IRF235, 237 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) IRF234, 236 12 VGS = 7V 9 6 VGS = 6V 3 VGS = 4V VGS = 5V 0 0 1000 FIGURE 4. FORWARD BIAS SAFE OPERATING AREA 25 50 75 100 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 5. OUTPUT CHARACTERISTICS 5-4 125 IRF234, IRF235, IRF236, IRF237 Typical Performance Curves Unless Otherwise Specified (Continued) 15 100 12 VGS = 8V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS = 2 x VGS 80µs PULSE TEST VGS = 10V 80ms PULSE TEST 9 VGS = 7V 6 VGS = 6V 3 VGS = 4.0V 1 TJ = 150oC VGS = 5V 0.1 0 0 0 10 2 4 6 8 VDS, DRAIN TO SOURCE VOLTAGE (V) 10 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) FIGURE 6. SATURATION CHARACTERISTICS 3.0 80µs PULSE TEST NORMALIZED DRAIN TO SOURCE ON RESISTANCE VOLTAGE DRAIN TO SOURCE ON RESISTANCE 10 FIGURE 7. TRANSFER CHARACTERISTICS 4.0 3.2 2.4 1.6 VGS = 10V 0.8 VGS = 20V 0 0 8 16 24 ID, DRAIN CURRENT (A) 32 1.25 2.4 1.8 1.2 0.6 0 20 40 60 80 100 120 140 160 1500 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGD C, CAPACITANCE (pF) 1200 1.05 0.95 0.85 900 CISS 600 COSS 300 -20 -20 FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 1.15 -40 -40 TJ, JUNCTION TEMPERATURE (oC) ID = 250µA 0.75 -60 ID = 4.1A VGS = 10V 0 -60 40 FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE TJ = 25oC 0 20 40 60 80 0 100 120 140 160 TJ, JUNCTION TEMPERATURE (oC) CRSS 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 5-5 IRF234, IRF235, IRF236, IRF237 Typical Performance Curves 102 ISD, SOURCE TO DRAIN CURRENT (A) VDS ≥ 50V 80µs PULSE TEST 8 TJ = 25oC 6 TJ = 150oC 4 2 0 10 TJ = 25oC TJ = 150oC 1 0.1 0 3 6 9 ID, DRAIN CURRENT (A) 12 15 0 FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT 0.4 0.8 1.2 1.6 VSD, SOURCE TO DRAIN VOLTAGE (V) FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE 20 VGS, GATE TO SOURCE VOLTAGE (V) gfs, TRANSCONDUCTANCE (S) 10 Unless Otherwise Specified (Continued) ID = 8.1A 16 VDS = 50V VDS = 125V 12 VDS = 200V 8 4 0 0 10 20 30 40 50 Qg(TOT), TOTAL GATE CHARGE (nC) FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE 5-6 2.0 IRF234, IRF235, IRF236, IRF237 Test Circuits and Waveforms VDS BVDSS L tP VARY tP TO OBTAIN + RG REQUIRED PEAK IAS VDS IAS VDD VDD - VGS DUT tP 0V IAS 0 0.01Ω tAV FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS tON tOFF td(ON) td(OFF) tf tr RL VDS 90% 90% + RG - VDD 10% 0 10% DUT 90% VGS VGS 0 50% PULSE WIDTH 10% FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS VDS (ISOLATED SUPPLY) CURRENT REGULATOR 50% VDD Qg(TOT) 12V BATTERY 0.2µF SAME TYPE AS DUT 50kΩ Qgd Qgs 0.3µF D IG(REF) VDS 0 DUT G S 0 IG CURRENT SAMPLING RESISTOR VGS IG(REF) VDS ID CURRENT SAMPLING RESISTOR 0 FIGURE 20. GATE CHARGE WAVEFORMS FIGURE 19. GATE CHARGE TEST CIRCUIT 5-7