INTERSIL RURU150100

RURU15070, RURU15080,
RURU15090, RURU150100
150A, 700V - 1000V Ultrafast Diodes
April 1995
Features
Package
• Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . . .<125ns
JEDEC STYLE SINGLE LEAD TO-218
o
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+175 C
ANODE
• Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . . . . .1000V
CATHODE
(FLANGE)
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
Symbol
• General Purpose
K
Description
RURU15070, RURU15080 and RURU15090 and RURU150100 are
ultrafast diodes with soft recovery characteristics (tRR < 125ns).
They have low forward voltage drop and are silicon nitride passivated ion-implanted epitaxial planar construction.
A
These devices are intended for use as freewheeling/clamping
diodes and rectifiers in a variety of switching power supplies and
other power switching applications. Their low stored charge and
ultrafast recovery with soft recovery characteristic minimizes ringing and electrical noise in many power switching circuits reducing
power loss in the switching transistors.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
RURU15070
TO-218
RURU15070
RURU15080
TO-218
RURU15080
RURU15090
TO-218
RURU15090
RURU150100
TO-218
RUR150100
NOTE: When ordering, use the entire part number.
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . .VRRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . VRWM
DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . VR
Average Rectified Forward Current . . . . . . . . . . . . IF(AV)
(TC = +65oC)
Repetitive Peak Surge Current. . . . . . . . . . . . . . . . IFSM
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . IFSM
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . PD
Avalanche Energy (L = 40mH) . . . . . . . . . . . . . . . . EAVL
Operating and Storage Temperature . . . . . . . . TSTG, TJ
RURU15070
RURU15080
RURU15090
RURU150100
UNITS
700
700
700
150
800
800
800
150
900
900
900
150
1000
1000
1000
150
V
V
V
A
300
300
300
300
A
1500
1500
1500
1500
A
375
50
-65 to +175
375
50
-65 to +175
375
50
-65 to +175
375
50
-65 to +175
W
mj
oC
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
5-1
File Number
3202.2
Specifications RURU15070, RURU15080, RURU15090, RURU150100
TC = +25oC, Unless Otherwise Specified
Electrical Specifications
LIMITS
RURU15070
SYMBOL
TEST CONDITION
MIN
o
VF
IF = 150A, TC = +25 C
IF = 150A, TC =
VF
IR
+150oC
TYP MAX MIN
RURU15090
TYP MAX MIN
RURU150100
TYP MAX MIN
TYP MAX
UNITS
-
-
1.9
-
-
1.9
-
-
1.9
-
-
1.9
V
-
-
1.7
-
-
1.7
-
-
1.7
-
-
1.7
V
o
-
-
500
-
-
-
-
-
-
-
-
-
µA
o
VR = 800V, TC = +25 C
-
-
-
-
-
500
-
-
-
-
-
-
µA
+25oC
-
-
-
-
-
-
-
-
500
-
-
-
µA
o
-
-
-
-
-
-
-
-
-
-
-
500
µA
o
VR = 700V, TC = +150 C
-
-
3.0
-
-
-
-
-
-
-
-
-
mA
+150oC
VR = 700V, TC = +25 C
VR = 900V, TC =
VR = 1000V, TC = +25 C
IR
RURU15080
VR = 800V, TC =
-
-
-
-
-
3.0
-
-
-
-
-
-
mA
o
-
-
-
-
-
-
-
-
3.0
-
-
-
mA
o
VR = 1000V, TC = +150 C
-
-
-
-
-
-
-
-
-
-
-
3.0
mA
IF = 1A, dIF/dt = 100A/µs
-
-
125
-
-
125
-
-
125
-
-
125
ns
IF = 150A, dIF/dt = 100A/µs
-
-
200
-
-
200
-
-
200
-
-
200
ns
tA
IF = 150A, dIF/d t = 100A/µs
-
100
-
-
100
-
-
100
-
-
100
-
ns
tB
IF = 150A, dIF/dt = 100A/µs
-
75
-
-
75
-
-
75
-
-
75
-
ns
0.4
oC/W
VR = 900V, TC = +150 C
tRR
RθJC
-
-
0.4
-
-
0.4
-
-
0.4
-
-
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
tRR = Reverse recovery time (See Figure 2), summation of tA + tB.
tA = Time to reach peak reverse current (See Figure 2).
tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2).
RθJC = Thermal resistance junction to case.
EAVL = Controlled avalanche energy (See Figures 7 and 8).
pw = pulse width.
D = duty cycle.
V1 AMPLITUDE CONTROLS IF
V2 AMPLITUDE CONTROLS dIF/dt
R1
L1 = SELF INDUCTANCE OF R4
+ LLOOP
Q1
+V1
+V3
t1 ≥ 5tA(MAX)
t2 > tRR
t3 > 0
L1
tA(MIN)
≤
R4
10
Q2
0
LLOOP
t2
R2
t1
IF
dIF
dt
tRR
tA
tB
0
DUT
Q4
0.25 IRM
t3
0
IRM
R4
C1
Q3
-V2
R3
-V4
VR
VRM
FIGURE 2. tRR WAVEFORMS AND DEFINITIONS
FIGURE 1. tRR TEST CIRCUIT
5-2
RURU15070, RURU15080, RURU15090, RURU150100
Typical Performance Curves
FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 4. TYPICAL REVERSE CURRENT vs VOLTAGE
FIGURE 5. TYPICAL tRR, tA AND tB CURVES vs FORWARD
CURRENT
IMAX = 1A
L = 40mH
R < 0.1Ω
EAVL = 1/2LI2 [VAVL/(VAVL - VDD)]
Q1 & Q2 ARE 1000V MOSFETs
Q1
130Ω
L
FIGURE 6. CURRENT DERATING CURVE FOR ALL TYPES
R +
VDD
1MΩ
DUT
12V
VAVL
Q2
130Ω
IL
IL
CURRENT
SENSE
I V
VDD
t0
12V
FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT
t1
t2
t
FIGURE 8. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS
5-3
RURU15070, RURU15080, RURU15090, RURU150100
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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5-4
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