2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV Datasheet

2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV
www.vishay.com
Vishay Siliconix
N-Channel 90 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
90
RDS(on) () at VGS = 10 V
4
Configuration
• Military Qualified
•
•
•
•
•
Single
TO-205AD
(TO-39)
BENEFITS
•
•
•
•
•
•
S
1
2
Low On-Resistence: 3.6 
Low Threshold: 1.6 V
Low Input Capacitance: 35 pF
Fast Switching Speed: 6 ns
Low Input and Output Leakage
APPLICATIONS
3
G
Guaranteed Reliability
Low Offset Voltage
Low-Voltage Operation
Easily Driven Without Buffer
High-Speed Circuits
Low Error Voltage
• Hi-Rel Systems
• Direct Logic-Level Interface: TTL/CMOS
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
• Battery Operated Systems
• Solid-State Relays
D
Top View
ORDERING INFORMATION
PART
DESCRIPTION/DSCC
PART NUMBER
PACKAGE
VISHAY ORDERING
PART NUMBER
Commercial
2N6661
2N6661
Commercial, Lead (Pb)-free
www.vishay.com/doc?67884
See -2 Flow Document
2N6661-2
2N6661JANTX
2N6661-E3
2N6661-2
JANTX2N6661 (std Au leads)
TO-205AD
(TO-39)
2N6661JANTXV
2N6661JTX02
JANTX2N6661 (with solder)
2N6661JTXL02
JANTX2N6661P (with PIND)
2N6661JTXP02
JANTXV2N6661 (std Au leads)
2N6661JTXV02
JANTXV2N6661P (with PIND)
2N6661JTVP02
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
90
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain
TC = 25 °C
TC = 100 °C
Currenta
Maximum Power Dissipation
ID
IDM
TC = 25 °C
TA = 25 °C
PD
UNIT
V
0.86
0.54
A
3
6.25
W
0.725
Thermal Resistance, Junction-to-Ambientb
RthJA
170
Thermal Resistance, Junction-to-Case
RthJC
20
TJ, Tstg
- 55 to 150
Operating Junction and Storage Temperature Range
°C/W
°C
Notes
a. Pulse width limited by maximum junction temperature.
b. Not required by military spec.
S11-1542-Rev. D, 01-Aug-11
1
Document Number: 70225
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TA = 25 °C, unless otherwise noted)
LIMITS
PARAMETER
MIN.
TYP.b
VDS = 0 V, ID = 10 μA
90
125
-
VDS = VGS, ID = 1 mA
0.8
1.6
2
TA = - 55 °C
-
1.8
2.5
TA = 125 °C
0.3
1.3
-
-
-
± 100
-
-
± 500
SYMBOL
TEST CONDITIONS
VDS
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
VGS(th)
VDS = 0 V
Gate-Body Leakage
IGSS
VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V
On-State Drain Currentb
ID(on)
VGS = 10 V
VDS = 10 V
VGS = 5 V
ID = 0.3 A
ID = 1 A
Drain-Source On-State Resistanceb
RDS(on)
Forward Transconductanceb
gfs
Diode Forward Voltage
VSD
TA = 125 °C
VDS = 72 V
TA = 125 °C
VGS = 10 V
TA = 125
°Cd
VDS = 7.5 V, ID = 0.475 A
VGS = 0 V
IS = 0.86 A
-
-
1
-
-
100
-
1.8
-
-
3.8
5.3
-
3.6
4
7.5
V
nA
μA
mA

-
6.7
170
340
-
mS
0.7
0.9
1.4
V
Dynamic
Input Capacitance
Ciss
-
35
50
Output Capacitance
Coss
-
15
40
Reverse Transfer Capacitance
Crss
-
2
10
Drain-Source Capacitance
Cds
-
30
-
-
6
10
-
8
10
VGS = 0 V
VDS = 25 V, f = 1 MHz
pF
Switchingc
Turn-On Time
tON
Turn-Off Time
tOFF
VDD = 25 V, RL = 23 
ID  1 A, VGEN = 10 V, Rg = 23 
ns
Notes
a. FOR DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW  300 μs duty cycle  2 %.
c. Switching time is essentially independent of operating temperature.
d. This parameter not registered with JEDEC.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S11-1542-Rev. D, 01-Aug-11
2
Document Number: 70225
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1.0
100
VGS = 10 V
VGS = 3 V
2.8 V
6V
0.8
I D - Drain Current (mA)
I D - Drain Current (A)
2.6 V
80
5V
0.6
4V
0.4
60
2.4 V
40
2.2 V
3V
0.2
20
2.0 V
1.8 V
2V
0
0
0
1.0
2.0
3.0
4.0
0
5.0
0.4
0.8
1.2
1.6
2.0
VDS - Drain-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Ohmic Region Characteristics
Output Characteristics for Low Gate Drive
7
0.5
125 °C
6
R DS(on) - On-Resistance (Ω)
VDS = 15 V
TJ = - 55 °C
0.4
I D - Drain Current (A)
25 °C
0.3
0.2
0.1
5
4
1.0 A
0.5 A
3
I D = 0.1 A
2
1
0
0
0
2
4
6
8
0
10
12
16
20
Transfer Characteristics
On-Resistance vs. Gate-to-Source Voltage
R DS(on) - Drain-Source On-Resistance (Normalized)
R DS(on) - Drain-Source On-Resistance (Ω)
8
VGS - Gate-Source Voltage (V)
10
8
6
VGS = 10 V
4
2
0
0
4
VGS - Gate-Source Voltage (V)
0.5
1.0
1.5
2.0
VGS = 10 V
2.00
1.75
1.50
1.25
1.00
0.75
0.50
- 50
2.5
- 10
30
70
110
150
TJ - Junction Temperature (°C)
I D - Drain Current (A)
On-Resistance vs. Drain Current
S11-1542-Rev. D, 01-Aug-11
2.25
Normalized On-Resistance
vs. Junction Temperature
3
Document Number: 70225
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
125
VGS = 0 V
VGS = 5 V
f = 1 MHz
C - Capacitance (pF)
I D - Drain Current (mA)
100
1
TJ = 150 °C
0.1
125 °C
75
50
C iss
C oss
25
25 °C
C rss
- 55 °C
0.01
0
0.5
1.0
1.5
2.0
0
VGS - Gate-to-Source Voltage (V)
10
20
30
40
V DS - Drain-to-Source Voltage (V)
Threshold Region
Capacitance
15.0
100
VDD = 25 V
RL = 23 Ω
VGS = 0 V to 10 V
ID = 1.0 A
I D = 1.0 A
12.5
t - Switching Time (ns)
VGS - Gate-to-Source Voltage (V)
50
10.0
VDS = 45 V
7.5
72 V
5.0
10
td(off)
tr
td(on)
tf
2.5
0
1
0
100
200
300
400
0.1
500
1
2
I D - Drain Current (A)
Qg - Total Gate Charge (pC)
Gate Charge
Load Condition Effects on Switching
1.0
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
Single Pulse
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
0.01
t1
t2
2. Per Unit Base = RthJC = 20 °C/W
3. TJM - TC = PDMZthJC(t)
0.01
0.1
1.0
10
100
1K
10 K
t1 - Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70225.
S11-1542-Rev. D, 01-Aug-11
4
Document Number: 70225
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-205AD (TO-39 TALL LID)
CD
HD
α
P
Q
CH
1
2
CL
L1
LU
TW
3
r
L2
TL
LL
LC
Seating
Plane
LD
DIM.
CD
CH
HD
LC (6)
LD (7)(8)
LL (7)(8)
LU (7)(8)
L1 (7)(8)
L2 (7)(8)
P (5)
Q (4)
r (9)
TL (3)
TW (2)
α (6)
ECN: S15-1675-Rev. D, 27-Jul-15
DWG: 5511
INCHES
MIN.
0.305
0.240
0.335
MILLIMETERS
MAX.
0.335
0.260
0.370
MIN.
7.75
6.10
8.51
0.021
0.750
0.019
0.050
—
—
0.050
0.010
0.045
0.034
0.41
12.70
0.41
—
6.35
2.54
—
—
0.74
0.71
0.200 TP
0.016
0.500
0.016
—
0.250
0.100
—
—
0.029
0.028
MAX.
8.51
6.60
9.40
5.08 TP
45° TP
0.53
19.05
0.48
1.27
—
—
1.27
0.25
1.14
0.86
45° TP
Notes
(1) Dimensions are in inches. Metric equivalents are given for general information only.
(2) Beyond radius (r) maximum, TW shall be held for a minimum length of 0.011" (0.028 mm).
(3) Dimension TL measured from maximum HD.
(4) Outline in this zone is not controlled.
(5) Dimension CD shall not vary more than 0.010 (0.25 mm) in zone P. This zone is controlled for automatic handling.
(6) Leads at guage plane 0.054" + 0.001", - 0.000" (1.37 mm + 0.03 mm, - 0.00 mm) below seating plane shall be within 0.007" (0.18 mm) radius
of true position (TP) at maximum material condition (MMC) relative to tab at MMC.
(7) LU applies between L1 and L2, LD applies between L2 and L maximum.
Diameter is uncontrolled in L1 and beyond LL minimum.
(8) All three leads.
(9) Radius (r) applies to both inside corners of tab.
(10) Drain is electrically connected to the case.
Revison: 27-Jul-15
1
Document Number: 71367
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000