UNISONIC TECHNOLOGIES CO., LTD UPA03R090M Preliminary POWER MOSFET -38A, -30V P-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET DESCRIPTION SOP-8 The UTC UPA03R090M is P-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with ideal for low voltage inverter applications. The UTC UPA03R090M is suitable for high efficiency synchronous rectification in SMPS, UPS, hard switched and high frequency circuits. 1 DFN-8(3x3) FEATURES * RDS(ON) <9mΩ @ VGS=-10V, ID=-10A RDS(ON) <12mΩ @ VGS=-4.5V, ID=-10A * High Power and Current Handling Capability * High Cell Density Trench Technology SYMBOL ORDERING INFORMATION Ordering Number Note: UPA03R090MG-S08-R UPA03R090MG-K08-3030-R Pin Assignment: G: Gate D: Drain Package SOP-8 DFN-8(3×3) 1 S S 2 S S Pin Assignment 3 4 5 6 7 S G D D D S G D D D 8 D D Packing Tape Reel Tape Reel S: Source www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 7 QW-R210-033 .a UPA03R090M Preliminary POWER MOSFET MARKING SOP-8 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw DFN-8(3×3) 2 of 7 QW-R210-033 .a UPA03R090M Preliminary POWER MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Pulsed Drain Current Pulsed (Note 2) Avalanche Current (Note 3) Avalanche energy Single Pulsed (Note 3) Peak Diode Recovery dv/dt (Note 4) SOP-8 Power Dissipation (Note 5) DFN-8(3×3) RATINGS UNIT -30 V ±20 V -13.2 A -52.8 A -53 A 140 mJ 1.2 V/nS 5 W PD 33 W Junction Temperature TJ +150 °C Storage Temperature Range TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L=0.1mH, IAS=-53A, VDD=30V, RG=25Ω, Starting TJ = 25°C. 4. ISD ≤-30A, di/dt ≤200A/μs, VDD ≤ V(BR)DSS, TJ = 25°C. 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. SYMBOL VDSS VGSS ID IDM IAR EAS dv/dt THERMAL CHARACTERISTICS (Note 5) PARAMETER Junction to Ambient Junction to Case SOP-8 DFN-8(3×3) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 50 25 3.8 UNIT °C/W °C/W °C/W 3 of 7 QW-R210-033 .a UPA03R090M Preliminary POWER MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°С, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) Static Drain-Source On-State Resistance RDS(ON) TEST CONDITIONS ID=-250µA, VGS=0V VDS=-30V, VGS=0V VGS=+20V, VDS=0V VGS=-20V, VDS=0V -30 VDS=VGS, ID=-250µA VGS=-10V, ID=-10A VGS=-4.5V, ID=-10A -1.0 DYNAMIC PARAMETERS Input Capacitance CISS VDS=-25V, VGS=0V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge(Note 1) QG VDS=-30V, VGS=-10V, ID=-0.5A, Gate to Source Charge QGS ID=-100µA (Note 1, 2) Gate to Drain Charge QGD Turn-on Delay Time(Note 1) tD(ON) Rise Time tR VDS=-30V, VGS=-10V, ID=-0.5A, R Turn-off Delay Time tD(OFF) G=-25Ω (Note 1, 2) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage (Note 1) VSD IS=-2.8A, VGS=0V Reverse Recovery Time (Note 1) trr IS=-30A, VGS=0V, dIF/dt=100A/μs Reverse Recovery Charge Qrr Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT -1 +100 -100 V µA uA uA -3.0 9.0 12 V mΩ mΩ 3400 480 375 pF pF pF 260 7.5 28 75 185 1380 840 nC nC nC ns ns ns ns -13.2 -52.8 1.2 250 560 A A V nS nC 4 of 7 QW-R210-033 .a UPA03R090M Preliminary POWER MOSFET TEST CIRCUITS AND WAVEFORMS + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period Peak Diode Recovery dv/dt Test Circuit VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R210-033 .a UPA03R090M Preliminary POWER MOSFET TEST CIRCUITS AND WAVEFORMS Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 QW-R210-033 .a UPA03R090M Preliminary POWER MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R210-033 .a