UNISONIC TECHNOLOGIES CO., LTD UTT37N08H Preliminary POWER MOSFET 37A, 80V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET DESCRIPTION The UTC UTT37N08H is an N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and low gate charge, etc. The UTC UTT37N08H applies to primary side switch, synchronous rectifier, Motor Drives, etc. FEATURES * RDS(ON) ≤ 23mΩ @ VGS=10V, ID=8A * High Cell Density Trench Technology * High Power and Current Handling Capability SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT37N08HL-TN3-R UTT37N08HG-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-252 Pin Assignment 1 2 3 G D S Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 5 QW-R209-172 .a UTT37N08H Preliminary Power MOSFET ABSOLUTE MAXIMUM RATING (TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT VDSS 80 V VGSS ±20 V Continuous ID 37 A Drain Current 148 A Pulsed (Note 2) IDM Avalanche Current (Note 2) IAR 26 A Avalanche Energy (Note 3) Single Pulsed (Note 3) EAS 34 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 3.6 V/ns Power Dissipation PD 62 W Junction Temperature TJ +150 °C Storage Temperature Range TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L = 0.1mH, IAS = 26A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C. 4. ISD ≤ 37A, di/dt ≤ 200A/μs, VDD ≤ V(BR)DSS, TJ = 25°C. Drain-Source Voltage Gate-Source Voltage THERMAL RESISTANCES CHARACTERISTICS PARAMETER SYMBOL θJA θJC Junction to Ambient Junction to Case RATINGS 110 2.01 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) Static Drain-Source On-State Resistance RDS(ON) TEST CONDITIONS ID=250µA, VGS=0V VDS=80V, VGS=0V VGS=+20V, VDS=0V VGS=-20V, VDS=0V 80 VDS=VGS, ID=250µA VGS=10V, ID=8.0A VGS=6.0V, ID=4.6A 2.0 DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge (Note 1) QG VDS=50V, VGS=10V, ID=1.3A, Gate to Source Charge QGS IG=100µA Gate to Drain Charge QGD Turn-on Delay Time (Note 1) tD(ON) Rise Time tR VDD=30V, VGS=10V, ID=0.5A, RG =25Ω Turn-off Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage (Note 1) VSD IS=8.0A, VGS=0V Reverse Recovery Time (Note 1) trr IS=30A, VGS=0V, dIF/dt =100A/μs Reverse Recovery Charge Qrr Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating ambient temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 1 +100 -100 V µA nA nA 4.0 23 37 V mΩ mΩ 1220 137 70 pF pF pF 72 9.5 12 76 61 150 61 nC nC nC ns ns ns ns 37 148 1.2 35 28 A A V nS nC 2 of 5 QW-R209-172 .a UTT37N08H Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period Peak Diode Recovery dv/dt Test Circuit VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R209-172 .a UTT37N08H Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 4 of 5 QW-R209-172 .a UTT37N08H Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R209-172 .a