UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT80N08H Power MOSFET 80A, 80V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET DESCRIPTION The UTC UTT80N08H is an N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and low gate charge, etc. The UTC UTT80N08H applies to primary side switch, synchronous rectifier, Motor Drives, etc. FEATURES * RDS(ON) ≤11mΩ @ VGS=10V, ID=40A * High Cell Density Trench Technology * High Power and Current Handling Capability SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT80N08HL-TA3-T UTT80N08HG-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 Pin Assignment 1 2 3 G D S Packing Tube UTT80N08HL-TA3-T (1)Packing Type (1) T: Tube (2)Package Type (2) TA3: TO-220 (3)Green Package (3) L: Lead Free, G: Halogen Free and Lead Free MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 5 QW-R209-173 .a UTT80N08H Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 80 V Gate-Source Voltage VGSS ±25 V Continuous Drain Current Continuous ID 80 A Pulsed Drain Current Pulsed (Note 2) IDM 320 A Avalanche Current (Note 3) IAR 40 A Avalanche energy Single Pulsed (Note 3) EAS 80 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 3.2 V/nS Power Dissipation PD 125 W Junction Temperature TJ +150 °C Storage Temperature Range TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L=0.1mH, IAS=40A, VDD=50V, RG=25Ω, Starting TJ = 25°C. 4. ISD ≤30A, di/dt ≤200A/μs, VDD ≤ V(BR)DSS, TJ = 25°C. THERMAL CHARACTERISTICS PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATINGS 62.5 1.0 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V Drain-Source Leakage Current IDSS VDS=80V, VGS=0V Forward VGS=+25V, VDS=0V Gate-Source Leakage Current IGSS Reverse VGS=-25V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=40A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge (Note 1) QG VDS=50V, VGS=10V, ID=1.3A, Gate to Source Charge QGS ID=100µA (Note 1, 2) Gate to Drain Charge QGD Turn-ON Delay Time (Note 1) tD(ON) VDS=30V, VGS=10V, ID=0.5A, Rise Time tR RG=25Ω (Note 1, 2) Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Diode Forward Voltage (Note 1) VSD IS=48A, VGS=0V Body Diode Reverse Recovery Time (Note 1) trr IS=30A, VGS=0V, dIF/dt=100A/µs Body Diode Reverse Recovery Charge Qrr Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 80 2.0 1 +100 -100 V µA nA nA 4.0 11 V mΩ 2800 320 235 pF pF pF 145 19 28 130 130 300 170 nC nC nC ns ns ns ns 80 320 1.2 100 100 A A V nS nC 2 of 5 QW-R209-173 .a UNISONIC TECHNOLOGIES CO., LTD UTT80N08H Preliminary POWER MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms Peak Diode Recovery dv/dt Waveforms www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 3 of 5 QW-R209-173 .a UTT80N08H Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 4 of 5 QW-R209-173 .a UTT80N08H Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R209-173 .a