Datasheet

UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UTT80N08H
Power MOSFET
80A, 80V N-CHANNEL
ENHANCEMENT MODE
TRENCH POWER MOSFET

DESCRIPTION
The UTC UTT80N08H is an N-channel Power MOSFET, it uses
UTC’s advanced technology to provide the customers with high
switching speed and low gate charge, etc.
The UTC UTT80N08H applies to primary side switch,
synchronous rectifier, Motor Drives, etc.

FEATURES
* RDS(ON) ≤11mΩ @ VGS=10V, ID=40A
* High Cell Density Trench Technology
* High Power and Current Handling Capability


SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT80N08HL-TA3-T
UTT80N08HG-TA3-T
Note: Pin Assignment: G: Gate D: Drain
S: Source
Package
TO-220
Pin Assignment
1
2
3
G
D
S
Packing
Tube
UTT80N08HL-TA3-T

(1)Packing Type
(1) T: Tube
(2)Package Type
(2) TA3: TO-220
(3)Green Package
(3) L: Lead Free, G: Halogen Free and Lead Free
MARKING
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UTT80N08H

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
80
V
Gate-Source Voltage
VGSS
±25
V
Continuous Drain Current
Continuous
ID
80
A
Pulsed Drain Current
Pulsed (Note 2)
IDM
320
A
Avalanche Current (Note 3)
IAR
40
A
Avalanche energy
Single Pulsed (Note 3)
EAS
80
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
3.2
V/nS
Power Dissipation
PD
125
W
Junction Temperature
TJ
+150
°C
Storage Temperature Range
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=0.1mH, IAS=40A, VDD=50V, RG=25Ω, Starting TJ = 25°C.
4. ISD ≤30A, di/dt ≤200A/μs, VDD ≤ V(BR)DSS, TJ = 25°C.

THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction to Case

SYMBOL
θJA
θJC
RATINGS
62.5
1.0
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
Drain-Source Leakage Current
IDSS
VDS=80V, VGS=0V
Forward
VGS=+25V, VDS=0V
Gate-Source Leakage Current
IGSS
Reverse
VGS=-25V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=40A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge (Note 1)
QG
VDS=50V, VGS=10V, ID=1.3A,
Gate to Source Charge
QGS
ID=100µA (Note 1, 2)
Gate to Drain Charge
QGD
Turn-ON Delay Time (Note 1)
tD(ON)
VDS=30V, VGS=10V, ID=0.5A,
Rise Time
tR
RG=25Ω (Note 1, 2)
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Diode Forward Voltage (Note 1)
VSD
IS=48A, VGS=0V
Body Diode Reverse Recovery Time (Note 1)
trr
IS=30A, VGS=0V,
dIF/dt=100A/µs
Body Diode Reverse Recovery Charge
Qrr
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%.
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
80
2.0
1
+100
-100
V
µA
nA
nA
4.0
11
V
mΩ
2800
320
235
pF
pF
pF
145
19
28
130
130
300
170
nC
nC
nC
ns
ns
ns
ns
80
320
1.2
100
100
A
A
V
nS
nC
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UTT80N08H

Preliminary
POWER MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
Peak Diode Recovery dv/dt Waveforms
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UTT80N08H

Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
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Time
Unclamped Inductive Switching Waveforms
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UTT80N08H
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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