UNISONIC TECHNOLOGIES CO., LTD UTT170N08H Preliminary POWER MOSFET 170A, 80V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET DESCRIPTION The UTC UTT170N08H is an N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and low gate charge, etc. The UTC UTT170N08H applies to primary side switch, synchronous rectifier, Motor Drives, etc. FEATURES * RDS(ON) < 4.8 mΩ @ VGS=10V, ID=60A * High Cell Density Trench Technology * High Power and Current Handling Capability SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT170N08HL-TA3-T UTT170N08HG-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 Pin Assignment 1 2 3 G D S Packing Tube MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 5 QW-R209-176 .a UTT170N08H Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 80 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current Continuous ID 170 A Pulsed Drain Current Pulsed (Note 2) IDM 680 A Avalanche Current (Note 3) IAR 42 A Avalanche energy Single Pulsed (Note 3) EAS 88 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.2 V/nS Power Dissipation PD 300 W Junction Temperature TJ +150 °C Storage Temperature Range TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L=0.1mH, IAS=42A, VDD=50V, RG=25Ω, Starting TJ = 25°C. 4. ISD ≤30A, di/dt ≤200A/μs, VDD ≤ V(BR)DSS, TJ = 25°C. THERMAL CHARACTERISTICS PARAMETER SYMBOL θJA θJC Junction to Ambient Junction to Case RATINGS 62.5 0.42 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse IGSS TEST CONDITIONS ID=250µA, VGS=0V VDS=80V, VGS=0V VGS=+20V, VDS=0V VGS=-20V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=60A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge (Note 1) QG VDS=50V, VGS=10V, ID=1.3A, Gate to Source Charge QGS ID=100µA (Note 1, 2) Gate to Drain Charge QGD Turn-on Delay Time (Note 1) tD(ON) VDS=30V, VGS=10V, ID=0.5A, Rise Time tR RG=25Ω (Note 1, 2) Turn-off Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage (Note 1) VSD IS=40A, VGS=0V Reverse Recovery Time (Note 1) trr IS=30A, VGS=0V, dIF/dt=100A/μs Reverse Recovery Charge Qrr Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 80 2.0 1 +100 -100 V µA nA nA 4.0 4.8 V mΩ 4360 595 260 pF pF pF 260 30 45 190 220 650 340 nC nC nC ns ns ns ns 170 680 1.0 45 53 A A V nS nC 2 of 5 QW-R209-176 .a UTT170N08H Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period Peak Diode Recovery dv/dt Test Circuit VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R209-176 .a UTT170N08H Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 4 of 5 QW-R209-176 .a UTT170N08H Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R209-176 .a