UNISONIC TECHNOLOGIES CO., LTD 1NM60 Power MOSFET 1.0A, 600V N-CHANNEL SUPER-JUNCTION MOSFET 1 TO-251 DESCRIPTION The UTC 1NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC, AC-DC converters for power applications. 1 TO-252 FEATURES 1 * RDS(ON) < 3.5Ω @ VGS = 10V, ID =0.5A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SOT-223 SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 1NM60G-AA3-R 1NM60L-TM3-T 1NM60G-TM3-T 1NM60L-TN3-R 1NM60G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source 1NM60G-AA3-R Package SOT-223 TO-251 TO-252 Pin Assignment 1 2 3 G D S G D S G D S Packing Tape Reel Tube Tape Reel (1)Packing Type (1) R: Tape Reel, T: Tube (2)Package Type (2) AA3: SOT-223, TM3: TO-251, TN3: TO-252 (3)Green Package www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd (3) L: Lead Free, G: Halogen Free and Lead Free 1 of 7 QW-R205-275.a 1NM60 Power MOSFET MARKING SOT-223 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TO-251 / TO-252 2 of 7 QW-R205-275.a 1NM60 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Continuous ID 1.0 A Drain Current Pulsed (Note 2) IDM 4.0 A Avalanche Current (Note 2) IAR 1.3 A Avalanche Energy Single Pulsed (Note 3) EAS 8.5 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 6.0 V/ns SOT-223 8.0 W Power Dissipation PD TO-251/TO-252 28 W Junction Temperature TJ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature. 3. L=10mH, IAS=1.3A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. ISD≤1.0A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL CHARACTERISTICS PARAMETER SOT-223 Junction to Ambient TO-251/TO-252 SOT-223 Junction to Case TO-251/TO-252 SYMBOL UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJA θJC RATINGS 150 110 15.6 4.46 UNIT °C/W °C/W °C/W °C/W 3 of 7 QW-R205-275.a 1NM60 Power MOSFET ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse IGSS TEST CONDITIONS VGS = 0V, ID = 250μA VDS = 600V, VGS = 0V VGS = +30V, VDS = 0V VGS = -30V, VDS = 0V MIN TYP MAX UNIT 600 ON CHARACTERISTICS Gate Threold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.5 Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID =0.5A DYNAMIC CHARACTERISTICS Input Capacitance CISS VGS =0V, VDS =25V, f =1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Total Gate Charge (Note 1) QG VDS=50V, VGS=10V, ID=0.5A Gate to Source Charge QGS IG=100µA (Note 1, 2) Gate to Drain Charge QGD Turn-ON Delay Time (Note 1) tD (ON) VDD=30V, VGS=10V, ID =0.5A, Rise Time tR RG =25Ω (Note 1, 2) Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage (Note 1) VSD IS=1.0A, VGS=0V Body Diode Reverse Recovery Time (Note 1) trr IS=1.0A, VGS=0V, dIF/dt=100A/µs Body Diode Reverse Recovery Charge Qrr Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 10 +100 -100 V μA nA nA 4.5 3.5 V Ω 113 79 8.5 pF pF pF 22.5 2.3 3.7 43 40 68 26 nC nC nC ns ns ns ns 1.0 4.0 1.4 155 0.6 A A V nS μC 4 of 7 QW-R205-275.a 1NM60 Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R205-275.a 1NM60 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 QW-R205-275.a 1NM60 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R205-275.a