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WFF4N60
WFF4N60C
Silicon N-Channel MOSFET
Features
�
4A,600V,RDS(on)(Max 2.5Ω)@VGS=10V
�
Ultra-low Gate Charge(Typical 16nC)
�
Fast Switching Capability
�
100%Avalanche Tested
�
Isolation Voltage(VISO=4000V AC)
�
Maximum Junction Temperature Range(150℃)
General Description
This Power
MOSFET is produced using Winsemi's advanced
planar stripe,VDMOS technology. This latest technology has been
especially designed to minimize on -state resistance,have a high
rugged avalanche characteristics. This devices is specially well
suited for half bridge and full bridge resonant topology line a
electronic lamp ballast.
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Value
Units
600
V
Continuous Drain Current(@Tc=25℃)
4*
A
Continuous Drain Current(@Tc=100℃)
2.5*
A
16*
A
±30
V
Drain Source Voltage
ID
IDM
Drain Current Pulsed
(Note1)
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note2)
240
mJ
EAR
Repetitive Avalanche Energy
(Note1)
10
mJ
dv/dt
Peak Diode Recovery dv /dt
(Note3)
4.5
V/ ns
30
W
0.26
W/℃
-55~150
℃
300
℃
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ,Tstg
TL
Junction and Storage Temperature
Channel Temperature
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
Value
Min
Typ
Max
Units
RQJC
Thermal Resistance , Junction -to -Case
-
-
4.17
℃/W
RQJA
Thermal Resistance , Junction-to -Ambient
-
-
62.5
℃/W
WT-F020-Rev.A0 Apr.2013
[email protected] Microelectronics Co., Ltd., All right reserved.
C
WFF4N60
WFF4N60C
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Gate leakage current
Gate-source breakdown voltage
Min
Type
Max
Unit
IGSS
VGS=±30V,VDS=0V
-
-
±100
nA
V(BR)GSS
IG=±10 µA,VDS=0V
±30
-
-
V
VDS=600V,VGS=0V
-
-
10
µA
VDS=480V,Tc=125℃
-
100
µA
Drain cut -off current
Drain -source breakdown voltage
Test Condition
IDSS
V(BR)DSS
ID=250 µA,VGS=0V
600
-
-
V
Gate threshold voltage
VGS(th)
VDS=10V,ID=250 µA
2
-
4
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=2A
-
1.8
2.5
Ω
Forward Transconductance
gfs
VDS=40V,ID=2A
-
4.7
-
S
Input capacitance
Ciss
VDS=25V,
-
710
920
Reverse transfer capacitance
Crss
VGS=0V,
-
14
19
Output capacitance
Coss
f=1MHz
-
65
85
VDD=300V,
-
55
120
ID=4A,
-
20
50
RG=25Ω,
-
55
120
-
70
150
-
16
20
-
3.4
-
-
7
-
Min
Type
Max
Unit
Rise time
tr
Turn-on time
ton
Switching time
Fall time
tf
Turn-off time
(Note4,5)
toff
Total gate charge(gate-source
pF
ns
VDD=480V,
Qg
plus gate-drain)
VGS=10V,
nC
Gate-source charge
Qgs
Gate-drain("miller") Charge
Qgd
ID=4A
(Note4,5)
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Continuous drain reverse current
IDR
-
-
-
4
A
Pulse drain reverse current
IDRP
-
-
-
17.6
A
Forward voltage(diode)
VDSF
IDR=4A,VGS=0V
-
-
1.4
V
Reverse recovery time
trr
IDR=4A,VGS=0V,
-
390
-
ns
Reverse recovery charge
Qrr
dIDR / dt =100 A / µs
-
2.2
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=18.5mH IAS=4A,VDD=50V,RG=0Ω ,Starting TJ=25℃
3.ISD≤4A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
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WFF4N60
WFF4N60C
Fig.1 On-State Characteristics
Fig.3 On Resistance variation vs
Fig.2 Transfer Current characteristics
Fig.4 Body Diode Forward Voltage
Variation vs Source Current
Drain Current
and temperature
Fig.5 On-Resistance Variation vs
Fig.6 Gate Charge Characteristics
Junction Temperature
3/7
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WFF4N60
WFF4N60C
Fig.7 Maximum Safe Operation Area
Fig.8 Maximum Drain Current vs
Case Temperature
Fig.9 Transient Thermal Response curve
4/7
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WFF4N60
WFF4N60C
Fig.10 Gate Test circuit & Waveform
Fig.11 Resistive Switching Test Circuit & Waveform
Fig.12 Uncamped Inductive Switching Test Circuit & Waveform
5/7
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WFF4N60
WFF4N60C
Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform
6/7
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WFF4N60
WFF4N60C
TO-220F Package Dimension
Unit:mm
7/7
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