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F12N65S
WF
WFF12N65S
650V Super-Junction Power MOSFET
Features
�
Ultra low R dson
�
Ultra low gate charge (typ. Q g = 28nC)
�
100% UIS tested
�
RoHS compl iant
�
Maximum Junction Temperature Range(150℃)
General Description
Power MOSFET is fabricated using advanced super junction
technology.
The resulting device
has
extremely
low
on
resistance, making it especially suitable for applications which
require superior power density and outstanding efficiency.
Absolute Maximum Ratings
Symbol
VDSS
ID
Parameter
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
1)
I DM
Drain Current Pulsed
VGS
Gate to Source Voltage
EAS
I AR
EAR
PD
Value
Units
650
V
12
A
30
A
±30
V
Single Pulse Avalanche Energy
2)
350
mJ
Single Pulse Avalanche Current
1)
12
A
12.5
mJ
33
W
Repetitive Avalanche Energy
1)
Total Power Dissipation(@Tc=25℃)
-Derate above 25℃
0.26
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃
Is
Continuous diode forward current
12
A
Diode pulse current
30
A
Is,pulse
Notes:
1.Repetitive Rating:Pulse width limited by maximum Junction Temperature
2.I AS=3.5,VDD=60V,R G=25Ω,Starting T J=25℃
Thermal Characteristics
Symbol
Parameter
Min
Value
Typ
Max
Units
R θJC
Thermal Resistance , Junction -to -Case
-
-
3.8
℃/W
RθJA
Thermal Resistance , Junction -to -Ambient
-
-
80
℃/W
WT-F042-Rev.A1 Nov.2013
Copyr [email protected] Microelectronics Co., Ltd., All right reserved.
F12
N65S
WF
WFF12
F12N
Electrical Characteristics(Tc=25℃ unless otherwise noted)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Gate leakage current
I GSS
VGS =±30V,VDS =0V
-
-
±100
nA
Drain cut -off current
I DSS
VDS =650,VGS =0V
-
-
1
µA
V(BR)DSS
I D=250µA,VGS =0V
650
-
-
V
VGS(th)
VDS =VGS,I D=250uA
2.5
-
4.5
V
Tj=25℃
-
0.315
0.35
Ω
Tj=125℃
-
0.69
-
Drain -source breakdownvoltage
Gate threshold voltage
VGS =10V,ID=6A
Drain -source ON resistance
R DS(ON)
Gate resistance
RG
f=1MHz,open drain
-
0.9
Input capacitance
C iss
VDS =25V,
-
1040
Reverse transfer capacitance
C rss
VGS =0V,
-
10
Output capacitance
C oss
f=1MHz
-
780
-
16
-
VDD = 380V, I D = 6A R G
-
14
-
= 4.7Ω, VGS =10V
-
40
-
tf
-
5
-
Gate to source charge
Qgs
-
6
-
Gate to drain charge
Q gd
VDD=480
-
13
-
Gate charge total
Qg
VG S=0 to 10 V
-
28
-
-
5.5
-
Min
Type
Max
Unit
VGS=0 V, I F=6A
-
-
1.4
V
Turn-on delay time
td(on)
tr
Rise time
Turn-off delay time
td(off)
Fall time
Gate plateau voltage
V,
I D=6A,
V plateau
Ω
pF
ns
nC
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Diode forward voltage
VSD
Reverse recovery time
trr
VR=50 V, I F=12A,
-
439
-
ns
Reverse recovery charge
Qrr
dIF/dt=100 A/μs
-
3.6
-
µc
Peak reverse recovery current
I rrm
-
15
-
A
2/6
Steady, keep you advance
F12
N65S
WF
WFF12
F12N
Fig.1 On-Region Characteristics
Fig.3 On-Resistance Variation vs.
Fig.2 Transfer Characteristics
Fig.4 Threshold Voltage vs.Temperature
Drain Current
Fig.5 Breakdown Voltage vs.
Fig.6 On-Resistance vs. Temperature
Temperature
3/6
Steady, keep you advance
F12
N65S
WF
WFF12
F12N
ID =6A
Fig.7 Capacitance Characteristics
Fig.9 Maximum Safe Operating Area
Fig.8 Gate Charge Characteristics
Fig.10 Power Dissipation vs.
Temperature
Fig.11 Transient Thermal Response Curve
4/6
Steady, keep you advance
F12
N65S
WF
WFF12
F12N
Fig.12 Gate Charge Test Circuit & Waveform
Fig.13 Switching Test Circuit & Waveforms
Fig.14 Unclamped Inductive Switching Test Circuit & Waveform
5/6
Steady, keep you advance
F12
N65S
WF
WFF12
F12N
F Package Dimension
TO-220
TO-220F
Unit:mm
6/6
Steady, keep you advance
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