datasheet

SKM 400GB125D
' 3 ,4 5# Absolute Maximum Ratings
Symbol Conditions
IGBT
6#2
'7 3 ,4 5#
#
'7 3 )4- 5#
),--
6
9--
$
' 3 :- 5#
*--
$
--
$
= ,-
6
)-
A
' 3 ,4 5#
*B-
$
' 3 :- 5#
,-
$
--
$
'7 3 )4- 5#
,::-
$
' 3 ,4 5#
*B-
$
' 3 :- 5#
,-
$
--
$
,::-
$
4--
$
'"7
D 9-CCCE )4-
5#
'
D 9-CCCE ),4
5#
9---
6
#1;3,#
6<2
Ultra Fast IGBT Modules
6## 3 -- 6> 6<2 ? ,- 6>
6#2 @ ),-- 6
'7 3 )4- 5#
1;
;
3 )- > C
SKM 400GAL125D
Freewheeling Diode
SKM 400GAR125D
'7 3 )4- 5#
1;
;
3 )- > C
! " #$ %&# % # &
'
()* + (,- +
Typical Applications*
.,-/0
1 " )-- /0
" 2 . ,- /0
'7 3 ),4 5#
Inverse Diode
SKM 400GB125D
Features
1;3, 1;3,
'7 3 )4- 5#
Module
(1;+
6
$# ) C
' 3 ,4 5# Characteristics
Symbol Conditions
IGBT
6<2(+
6<2 3 6#2 # 3 ), $
#2
6<2 3 - 6 6#2 3 6#2
6#2#2
6#2(+
6<2 3 )4 6
'7 3 ,4 5#
Units
94
44
4
6
-)4
-94
$
)9
6
'7 3 ,45#
*
G
'7 3 ),45#
F
G
3 ) ;0
6
**
*:4
9
944
6
,,
**
*9
),
)
6
H<
6<2 3 -6 D E,-6
,4-
#
1<
'7 3 5#
),4
I
F4)F
4-*,
J
):
J
(+
2
(+
1< 3 , G
1< 3 , G
2
1(7D+
1
max.
)F
#
GAL
typ.
'7 3 ),4 5#
# 3 *-- $ 6<2 3 )4 6 '7 3 ,45#"C
6#2 3 ,4 6<2 3 - 6
min.
'7 3 ,4 5#
'7 3 ),45#"C
#
#
GB
Units
' 3 ,4 5#
#1;
SEMITRANS® 3
Values
<&'
6## 3 --6
#3 *--$
'7 3 ),4 5#
6<2 3 =)46
--4
KLM
GAR
27-06-2007 SCH
© by SEMIKRON
SKM 400GB125D
Characteristics
Symbol Conditions
Inverse Diode
6 3 62#
6
3 *-- $> 6<2 3 - 6
-
min.
typ.
max.
Units
'7 3 ,4 5#"C
,
,4
6
'7 3 ),4 5#"C
):
'7 3 ,4 5#
))
6
),
'7 3 ),4 5#
6
'7 3 ,4 5#
*
9*
'7 3 ),4 5#
®
SEMITRANS 3
Ultra Fast IGBT Modules
11;
H
3 *-- $
L
3 :*-- $LA
2
6<2 3 - 6> 6## 3 -- 6
1(7D+%
6
G
G
'7 3 ),4 5#
*494
$
A#
)
J
-),4
KLM
,4
6
Freewheeling Diode
6 3 62#
SKM 400GB125D
6
SKM 400GAL125D
3 *-- $> 6<2 3 - 6
-
'7 3 ,4 5#"C
,
'7 3 ),4 5#"C
):
'7 3 ,4 5#
))
),
*
9*
6
'7 3 ),4 5#
SKM 400GAR125D
6
'7 3 ,4 5#
'7 3 ),4 5#
Features
! " #$ %&# % # &
'
()* + (,- +
11;
H
3 *-- $
L
3 :*-- $LA
2
6<2 3 - 6> 6## 3 -- 6
1(7D+
%
6
6
6
'7 3 ),4 5#
*494
$
A#
)
J
-),4
KLM
Module
#2
1##NE22N
)4
C D
1(D+
;
/ ;
;
;
,-
'3 ,4 5#
-*4
G
'3 ),4 5#
-4
G
--*:
KLM
*
4
O
,4
4
O
*,4
Typical Applications*
.,-/0
1 " )-- /0 This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
" 2 . ,- /0
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our personal.
GB
2
GAL
GAR
27-06-2007 SCH
© by SEMIKRON
SKM 400GB125D
Zth
Symbol
Zth(j-c)l
Conditions
Values
Units
1
1
1
1
3)
3,
3*
39
3)
3,
3*
*
)-4
*
-4
--F99
---F:
---)
/LM
/LM
/LM
/LM
39
----,
SKM 400GAL125D
1
1
1
1
3)
3,
3*
39
3)
3,
3*
F4
*:
)-
)9
--*:
--,-)
---)
/LM
/LM
/LM
/LM
SKM 400GAR125D
39
---*
SEMITRANS® 3
Zth(j-c)D
Ultra Fast IGBT Modules
SKM 400GB125D
Features
! " #$ %&# % # &
'
()* + (,- +
Typical Applications*
.,-/0
1 " )-- /0
" 2 . ,- /0
GB
3
GAL
GAR
27-06-2007 SCH
© by SEMIKRON
SKM 400GB125D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
4
27-06-2007 SCH
© by SEMIKRON
SKM 400GB125D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode peak reverse recovery charge
5
27-06-2007 SCH
© by SEMIKRON
SKM 400GB125D
UL Recognized
File 63 532
# % 4
<&
6
# % 4
<$
# % 4F (P % 4+
27-06-2007 SCH
<$1
# % 4: (P % 4 +
© by SEMIKRON
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