Datasheet

UNISONIC TECHNOLOGIES CO., LTD
MMBT1616/A
NPN EPITAXIAL SILICON TRANSISTOR
NPN EPITAXIAL SILICON
TRANSISTOR
3
DESCRIPTION

* Audio frequency power amplifier
* Medium speed switching
2
1
SOT-23
(JEDEC TO-236)

ORDERING INFORMATION
Order Number
Note:
MMBT1616G-x-AE3-R
MMBT1616AG-x-AE3-R
Pin Assignment: E: Emitter
B: Base
MMBT1616G-x-AE3-R

Package
SOT-23
SOT-23
C: Collector
Pin Assignment
1
2
3
E
B
C
E
B
C
Packing
Tape Reel
Tape Reel
(1) Packing Type
(1) R: Tape Reel
(2) Package Type
(2) AE3: SOT-23
(3) Rank
(3) x: refer to Classification of hFE1
(4) Green Package
(4) L: Lead Free, G: Halogen Free and Lead Free
MARKING
UTC MMBT1616
16G
UTC MMBT1616A
16AG
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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MMBT1616/A

NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25C, unless otherwise specified)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
SYMBOL
MMBT1616
MMBT1616A
MMBT1616
MMBT1616A
RATINGS
60
120
50
60
6
1
2
350
+150
-55 ~ +150
VCBO
VCEO
UNIT
V
V
Emitter to Base Voltage
VEBO
V
Collector Current
DC
IC
A
Collector Current
Pulse
IC
A
Total Power Dissipation (TA=25°C)
PD
mW
Junction Temperature
TJ
°C
Storage Temperature
TSTG
°C
Note (*) Pulse width10ms, Duty cycle<50%
1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified)
PARAMETER
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base Emitter On Voltage
DC Current Gain
Current Gain Bandwidth Product
Output Capacitance
Turn On Time
Storage Time
Fall Time

SYMBOL
ICBO
IEBO
VCE(SAT)
VBE(SAT)
VBE(ON)
hFE1
hFE2
fT
Cob
ton
ts
tf
TEST CONDITIONS
VCB=60V
VEB= 6V
IC=1A, IB=50mA
IC=1A, IB=50mA
VCE=2V, IC=50mA
VCE=2V, IC=100mA
VCE=2V, IC=1A
VCE=2V, IC=100mA
VCB=10V, f=1MHz
VCE=10V, IC=100mA
IB1=-IB2=10mA
VBE(off)=-2～-3V
MIN
600
135
81
100
TYP MAX UNIT
100
nA
100
nA
0.15 0.3
V
0.9
1.2
V
640 700 mV
600
160
19
0.07
0.95
0.07
MHz
pF
us
us
us
CLASSIFICATION OF hFE1
RANK
hFE1
Y
135-270
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
G
200-400
L
300-600
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NPN EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
IB
=4
.0
m
A
Collector Current, IC (mA)
Time, ton (µs), tstg (µs), tf (µs)

UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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MMBT1616/A
s
m
=1
PW s
m s
10 00m
2
D1616A
DC
D1616
T)
SA
E(
C
V
Collector Current, IC (A)
TYPICAL CHARACTERISTICS(Cont.)
Saturation Voltage, VBE(SAT), VCE(SAT) (V)

NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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