UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR FEATURES * High breakdown voltage.(BVCEO=120V) * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SD1857L-x-T60-K 2SD1857G-x-T60-K 2SD1857L-x-T6S-K 2SD1857G-x-T6S-K 2SD1857L-x-TM3-T 2SD1857G-x-TM3-T 2SD1857L-x-T92-B 2SD1857G-x-T92-B 2SD1857L-x-T92-K 2SD1857G-x-T92-K 2SD1857L-x-T9N-B 2SD1857G-x-T9N-B 2SD1857L-x-T9N-K 2SD1857G-x-T9N-K Note: Pin Assignment: E: Emitter C: Collector B: Base www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., LTD Package TO-126 TO-126S TO-251 TO-92 TO-92 TO-92NL TO-92NL Pin Assignment 1 2 3 E C B E C B E C B E C B E C B E C B E C B Packing Bulk Bulk Tube Tape Box Bulk Tape Box Bulk 1 of 4 QW-R201-057. I 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR MARKING TO-126 / TO-126C TO-251 TO-92 TO-92NL L: Lead Free G: Halogen Free UTC 2SD1857 Data Code UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R201-057. I 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Power Dissipation SYMBOL VCBO VCEO VEBO TO-126/TO-126S TO-92 TO-92 NL TO-251 RATINGS 120 120 5 1.4 0.625 0.9 2 2 3 PC Collector Current Collector Current IC ICP UNIT V V V W A A Junction Temperature TJ +150 °C Storage Temperature TSTG -40 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA=25°C) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Transfer Ratio Collector-Emitter Saturation Voltage Transition Frequency Output Capacitance Note: Measured using pulse current. SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(SAT) fT COB TEST CONDITIONS MIN IC=50µA 120 IC=1mA 120 IE=50µA 5 VCB=100V VEB=4V VCE=5V, IC=0.1A 82 IC=/IB=1A/0.1A (Note) VCE=5V, IE= -0.1A, f=30MHz. VCB=10V, IE=0A, f=1MHz (Note) TYP MAX UNIT V V V 1 µA 1 µA 390 0.4 V 80 MHz 20 pF CLASSIFICATION OF hFE RANK RANGE P 82-180 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Q 120-270 R 180-390 3 of 4 QW-R201-057. I 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTICS 1.0 1000 9mA 8mA 7mA Collector Current: IC(A) 0.8 6mA 5mA 4mA 0.6 0.4 3mA 2mA 0.2 1mA 0 IB=0mA 0 1 2 3 4 5 Collector to Emitter Voltage: VCE(V) Collector Saturation Voltage: VCE(SAT)(V) 10 DC Current Fain: hFE 10mA 500 TA=25°C 200 VCE=10V 100 50 20 5V 10 5 2 1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 Collector Current,IC (A) 5 10 TA=25°C 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 Collector Current,IC (A) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R201-057. I