V I S H AY I N T E R T E C H N O L O G Y, I N C . Diodes FRED Pt ® Gen 4 Ultrafast Diodes 600 V and 650 V Ultrasoft Recovery FRED Pt® Gen 4 Ultrafast Diodes Reduce Conduction Losses and Increase Efficiency FRED Pt® Gen 4 COMPETITION KEY BENEFITS • FRED Pt® Gen 4 technology • Designed for use with Vishay’s new Trench insulated gate bipolar transistors (IGBT) • Low IRRM and reverse recovery charge • Ultrasoft recovery in any switching conditions • Ultra-low forward voltage down to 1.4 V • Ultrafast reverse recovery times down to 25 ns • High operating temperature up to + 175 °C • RoHS compliant APPLICATIONS • High-frequency converters in power modules, motor drives, UPS, solar inverters, and welding machine inverters • Single- and three-phase inverters, and full- and half-bridge DC/DC converters • Power factor correction (PFC) circuits, boosters, choppers, and secondary-side rectification RESOURCES • Datasheets: please visit http://www.vishay.com/die-wafer/fred_pt_gen4/ for product information • For technical questions, contact [email protected] • Material categorization: For definitions of compliance, please see http://www.vishay.com/doc?99912 A WORLD OF SOLUTIONS PRODUCT SHEET 1/2 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VMN-PT0439-1604 www.vishay.com V I S H AY I N T E R T E C H N O L O G Y, I N C . Diodes FRED Pt ® Gen 4 Ultrafast Diodes 600 V and 650 V Ultrasoft Recovery FRED Pt® Gen 4 Ultrafast Diodes Reduce Conduction Losses and Increase Efficiency The new FRED Pt® Gen 4 Ultrafast recovery diodes provide the perfect complement to Vishay’s recently introduced trench insulated gate bipolar transistors (IGBT). Together, the devices provide low EMI and plug-and-play reliability for single- and three-phase inverters, and full- and half-bridge DC/DC converters. They also show efficient and reliable operation with major suppliers’ state-of-the-art IGBTs. The “H” and “U” series diodes can also be used as stand-alone components for PFC circuits, boosters, choppers, and secondary-side rectification. Designed to minimize conduction losses in medium-speed circuits, “U” series diodes feature extremely low forward voltage down to 1.4 V for 600 V devices. Optimized to deliver high speeds for higher frequency applications, “H” series diodes offer reverse recovery times down to 25 ns with low typical forward voltages down to 1.65 V for 600 V devices. The Gen 4 diodes feature improved technologies in their active area and termination design — allowing for forward currents ranging from 12 A to 250 A in smaller die sizes than previous-generation devices — while their reduced thickness improves thermal impedance. Series Speed BVCES (V) IF (A) VF Typ (V) Max. Temp. (°C) Die Size X (mm) Die Size Y (mm) VS-4FD081H06A6x H 600 12 1.65 175 2.06 2.06 VS-4FD081U06A6x U 600 12 1.4 175 2.06 2.06 VS-4FD121H06A6x H 600 20 1.7 175 3.07 2.43 VS-4FD121U06A6x U 600 20 1.4 175 3.07 2.43 VS-4FD156H06A6x H 600 30 1.65 175 3.96 2.59 VS-4FD156U06A6x U 600 30 1.4 175 3.96 2.59 VS-4FD198H06A6x H 600 50 1.65 175 5.03 3.35 VS-4FD198U06A6x U 600 50 1.4 175 5.03 3.35 VS-4FD236H06A6x H 600 75 1.48 175 4.14 5.99 VS-4FD236U06A6x U 600 75 1.35 175 4.14 5.99 VS-4FD282H06A6x H 600 100 1.55 175 4.42 7.16 VS-4FD282U06A6x U 600 100 1.4 175 4.42 7.16 VS-4FD335H06A6x H 600 150 1.68 175 8.51 5.28 VS-4FD335U06A6x U 600 150 1.5 175 8.51 5.28 VS-4FD378H06A6x H 600 200 1.6 175 9.6 6.04 VS-4FD378U06A6x U 600 200 1.45 175 9.6 6.04 VS-4FD447H06A6x H 600 250 1.6 175 6.73 11.35 11.35 VS-4FD447U06A6x U 600 250 1.4 175 6.73 VS-4FD121H07A6x H 650 20 1.85 175 3.07 2.43 VS-4FD121U07A6x U 650 20 1.47 175 3.07 2.43 VS-4FD156H07A6x H 650 30 1.8 175 3.96 2.59 VS-4FD156U07A6x U 650 30 1.45 175 3.96 2.59 VS-4FD198H07A6x H 650 50 1.88 175 5.03 3.35 VS-4FD198U07A6x U 650 50 1.5 175 5.03 3.35 VS-4FD236H07A6x H 650 75 1.57 175 4.14 5.99 VS-4FD236U07A6x U 650 75 1.42 175 4.14 5.99 VS-4FD282H07A6x H 650 100 1.66 175 4.42 7.16 VS-4FD282U07A6x U 650 100 1.5 175 4.42 7.16 VS-4FD335H07A6X H 650 150 1.78 175 8.51 5.28 VS-4FD335U07A6X U 650 150 1.6 175 8.51 5.28 VS-4FD378H07A6x H 650 200 1.75 175 9.6 6.04 VS-4FD378U07A6x U 650 200 1.55 175 9.6 6.04 x = BC (unsawn wafer), FC (die sawn on film) PRODUCT SHEET 2/2 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VMN-PT0439-1604 www.vishay.com