UNISONIC TECHNOLOGIES CO., LTD UP2855 PNP SILICON TRANSISTOR PNP MEDIUM POWER LOW SATURATION TRANSISTOR DESCRIPTION The UTC UP2855 is a transistor with low saturation voltage. It provides customers with very low on-state losses that makes it ideal for applications, such as driving and power management functions and DC-DC circuits. FEATURES * Extremely low saturation voltages * Peak current up to 10A * 4A continuous current ORDERING INFORMATION Ordering Number Note: UP2855G-AA3-R Pin Assignment: B: Base C: Collector Package SOT-223 E: Emitter Pin Assignment 1 2 3 B C E Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 4 QW-R207-024.E UP2855 PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified ) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current (Note 1) Peak Pulse Current RATINGS UNIT -180 V -140 V -7 V -4 A -10 A 3.0 (Note 1) Power Dissipation PD W 1.6 (Note 2) Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VCBO VCEO VEBO IC ICM THERMAL RESISTANCE PARAMETER RATINGS UNIT 42 (Note 1) Junction to Ambient θJA °C/W 78 (Note 2) Notes: 1. For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. SYMBOL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER SYMBOL TEST CONDITIONS Collector-Base Breakdown Voltage VCBO IC=-100μA Collector-Emitter Breakdown Voltage VCER IC=-1μA, RB≤1kΩ Collector-Emitter Breakdown Voltage VCEO IC=-10mA (Note 1) Emitter-Base Breakdown Voltage VEBO IE=-100μA VCB=-150V Collector Cut-Off Current ICBO VCB=-150V, TA=100°C VCB=-150V, Collector Cut-Off Current ICER R≤1kΩ TA=100°C Emitter Cut-Off Current IEBO VEB=-6V IC=-0.1A, IB=-5mA Collector-Emitter Saturation Voltage IC=-0.5A, IB=-50mA VCE(SAT) (Note 1) IC=-1A, IB=-100mA IC=-3A, IB=-300mA Base-Emitter Saturation Voltage VBE(SAT) IC=-3A, IB=-300mA(Note 1) Base-Emitter Turn-On Voltage VBE(ON) IC=-3A, VCE=-5V (Note 1) IC=-10mA, VCE=-5V Static Forward Current Transfer IC=-1A, VCE=-5V hFE Ratio (Note 1) IC=-3A, VCE=-5V IC=-10A, VCE=-5V IC=-100mA, VCE=-10V Transition Frequency fT f=50MHz Output Capacitance (Note 1) COBO VCB=-10V, f=1MHz tON IC=-1A, VCC=-50V, Switching Times IB1=-IB2=-100mA tOFF Note: 1. Measured under pulsed conditions. Pulse width≤300μs; duty cycle≤2%. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN -180 -180 -140 -7.0 TYP -200 -200 -160 -8.0 <1 <1 100 100 45 <1 -40 -55 -85 -275 -940 -830 225 200 100 5 MAX -20 -0.5 -20 -0.5 -10 -60 -80 -120 -360 -1040 -930 UNIT V V V V nA μA nA μA nA mV mV mV mV mV mV 300 120 MHz 33 42 636 pF ns 2 of 4 QW-R207-024.E UP2855 PNP SILICON TRANSISTOR TYPICAL CHARACTERISTICS Power Dissipatio vs Ambient Temperature hFE vs. IC 100 VCE=5V 10 1ms 1 10ms 100ms 0.1 1.0s DC 0.01 250 250 1.4 300μs Normalised Gain Collector Current, -IC (A) 1.6 TA=25ºC 0.1 55ºC 1.2 200 25ºC 1.0 150 0.8 100 0.6 50 0 0.4 10m 1m 1 10 100 Collector-Emitter Voltage,-VCE(V) Typical Gain(hFE) 100m 1 Collector Current, -IC (A) VBE(SAT) vs. IC VCE(SAT) vs. IC 1.4 2.0 IC / IB=10 IC / IB=10 55°C 1.2 1.0 25°C -VBE(SAT) (V) -VCE(SAT) (V) 1.5 0.5 0.0 1.0 0.8 0.6 25°C 0.4 55°C 1 100m 1m 10m 100m Collector Current, -IC (A) Collector Current, -IC (A) VBE(ON) vs. IC VCE(SAT) vs. IC 1 VCE=5V 1 TA=25°C 1.4 -VCE(SAT)(V) -VBE(ON) (V) 1.2 1.0 0.8 0.6 25°C 0.4 55°C 100m IC / IB=50 IC / IB=20 IC / IB=10 10m 1m 10m 100m 1 Collector Current, -IC (A) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 1m 10m 100m 1 Collector Current, -IC (A) 3 of 4 QW-R207-024.E UP2855 PNP SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R207-024.E