Datasheet

UNISONIC TECHNOLOGIES CO., LTD
2SA1015
PNP SILICON TRANSISTOR
LOW FREQUENCY PNP
AMPLIFIER TRANSISTOR

FEATURES
* Collector-Emitter Voltage: BVCEO=-50V
* Collector Current up to 150mA
* High hFE Linearity
* Complement to UTC 2SC1815

TO-92
ORDERING INFORMATION
Ordering Number
Lead Free Plating
Halogen Free
2SA1015L-xx-T92-B
2SA1015G-xx-T92-B
2SA1015L-xx-T92-K
2SA1015G-xx-T92-K
Note: Pin Assignment: E: Emitter
C: Collector
B: Base

1
Package
TO-92
TO-92
Pin Assignment
1
2
3
E
C
B
E
C
B
Packing
Tape Box
Bulk
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., LTD
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
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PC
RATINGS
-50
-50
-5
-150
-50
400
UNIT
V
V
V
mA
mA
mW
Junction Temperature
TJ
125
°C
Storage Temperature
TSTG
-55 ~ +125
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
VCE(SAT)
VBE(SAT)
COB
fT
Noise Figure

NF
TEST CONDITIONS
IC=-100μA, IE=0
IC=-10mA, IB=0
IE=-10μA, IC=0
VCB=-50V, IE=0
VEB=-5V, IC=0
VCE=-6V, IC=-2mA
VCE=-6V, IC=-150mA
IC=-100mA, IB=-10mA
IC=-100mA, IB=-10mA
VCB=-10V, IE=0, f=1MHz
VCE=-10V, Ic=-1mA
VCE=-6V , IC=-0.1mA,
RG=1kΩ, f=100Hz
MIN
-50
-50
-5
TYP
MAX UNIT
V
V
V
-100
nA
-100
nA
700
-0.1
4.0
-0.3
-1.1
7.0
V
V
pF
MHz
0.5
6
dB
120
25
80
CLASSIFICATION OF hFE1
RANK
RANGE
Y
120-240
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
GR
200-400
BL
350-700
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
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Static characteristics
DC Current Gain
-50
103
-40
VCE=-6V
102
IB=-300µA
-30
IB=-250µA
IB=-200µA
-20
101
IB=-150µA
-10
IB=-100µA
IB=-50µA
0
-0
-8
-4
-12
-16
-20
100
-10-1
-100
Collector-Emitter Voltage, BVCEO (V)
-101
-102
-103
Collector current, IC (mA)
Base-Emitter on Voltage
Saturation voltage
-101
-102
IC=10xIB
VCE=-6V
-101
-100
-100
-10-1
-10-1
-10-2
0
-0.2
-0.4
-0.6
-0.8
VBE(SAT)
VCE(SAT)
-10-1
-1.0
Base-Emitter Voltage, BVBEO (V)
-101
-102
-103
Collector Current, IC (mA)
Current Gain-Bandwidth Product
Collector Output Capacitance
-102
f=1MHz
-10-1 IE=0
3
10
VCE=-6V
102
-101
101
-100
100
-10-1
-100
-10-1
0
-10
1
-10
2
-10
Collector current, IC (mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
-100
-101
-102
-103
Collector-Base Voltage, BVCBO (V)
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PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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