UNISONIC TECHNOLOGIES CO., LTD BD139 NPN SILICON TRANSISTOR NPN POWER TRANSISTORS FEATURES * High current (max.1.5A) * Low voltage (max.80V) ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free BD139L-xx-T60-K BD139G-xx-T60-K TO-126 BD139L-xx-T6S-K BD139G-xx-T6S-K TO-126S BD139L-xx-TM3-T BD139G-xx-TM3-T TO-251 Note: Pin Assignment: E: Emitter C: Collector B: Base BD139L-xx-T60-K Pin Assignment 1 2 3 E C B E C B B C E Packing Bulk Bulk Tube (1)Packing Type (1) K: Bulk, T: Tube (2)Package Type (2) T60: TO-126, T6S: TO-126S, TM3: TO-251 (3)Rank (3) refer to hFE (4)Green Package (4) L: Lead Free, G: Halogen Free and Lead Free MARKING TO-126 / TO-126S www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd TO-251 1 of 3 QW-R204-007.E BD139 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Peak Collector Current Peak Base Current Power Dissipation (Ta=25°C) SYMBOL VCBO VCEO VEBO IC ICM lBM TO-126/ TO-126S TO-251 PD RATINGS 100 80 5 1.5 2 1 1.25 UNIT V V V A A A W W °C °C °C 1 +150 -65~+150 -65~+150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Junction Temperature Operating Temperature Storage Temperature TJ TOPR TSTG ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL Collector Cut-Off Current ICBO Emitter Cut-Off Current IEBO DC Current Gain hFE BD139-10 BD139-16 Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency DC Current Gain IC =150mA, VCE=2V (See Fig.1) VCE(SAT) VBE fT UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS IE=0, VCB=30V IE=0, VCB=30V, TJ=125°C IC=0, VEB=5V IC=5mA VCE=2V (See Fig.1) IC =150mA IC =500mA IC =500 mA, IB=50mA IC =500 mA, VCE=2V IC =500 mA, VCE=5V, f=100MHz MIN TYP MAX UNIT 100 nA 10 μA 100 nA 40 63 25 63 100 250 160 250 0.5 1 190 V V MHz 2 of 3 QW-R204-007.E BD139 NPN SILICON TRANSISTOR Collector Current, IC (A) DC Current Gain, hFE TYPICAL CHARACTERISTICS UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R204-007.E