UNISONIC TECHNOLOGIES CO., LTD 2SA1774 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR FEATURES * Excellent hFE linearity * Complements the UTC 2SC4617 ORDERING INFORMATION Ordering Number 2SA1774G-x-AE3-R 2SA1774G-x-AL3-R 2SA1774G-x-AN3-R 2SA1774G-x-AQ3-R Note: Pin Assignment: E: Emitter B: Base Package SOT-23 SOT-323 SOT-523 SOT-723 Packing Tape Reel Tape Reel Tape Reel Tape Reel C: Collector (1) R: Tape Reel 2SA1774G-x-AE3-R Pin Assignment 1 2 3 E B C E B C E B C E B C (1)Packing Type (2)Package Type (2) AE3: SOT-23, AL3: SOT-323, AN3: SOT-523, (3)Rank (3)Green Package (3) x: refer to Classification of hFE AQ3: SOT-723 (4) G: Halogen Free and Lead Free MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R221-011.E 2SA1774 PNP EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25°С, unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current RATINGS UNIT -60 V -50 V -6 V -0.15 A SOT-23 0.22 SOT-323 0.16 Collector Power Dissipation PC W SOT-523 0.15 SOT-723 0.125 Junction Temperature TJ 150 °С Storage Temperature TSTG -55 ~ +150 °С Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. The device is guaranteed to meet performance specification within 0°С ~70°С operating temperature range and assured by design from –20°С ~85°С. SYMBOL VCBO VCEO VEBO IC ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified.) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Transfer Ratio Collector-Emitter Saturation Voltage Transition Frequency Output Capacitance SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (SAT) fT COB TEST CONDITIONS IC = -50µA IC = -1mA IE = -50µA VCB= -60V VEB= -6V VCE= -6V, IC= -1mA IC=-50mA, IB=−5mA VCE= -12V, IE=2mA, f=100MHz VCB= -12V, IE=0A, f=1MHz MIN -60 -50 -6 TYP MAX -0.1 -0.1 560 -0.5 120 140 4.0 5.0 UNIT V V V µA µA V MHz pF CLASSIFICATION OF hFE1 RANK Range Q 120 ~ 270 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw R 180 ~ 390 S 270 ~ 560 2 of 3 QW-R221-011.E 2SA1774 PNP EPITAXIAL SILICON TRANSISTOR hFE,DC Current Gain Collector-Emitter Saturation Voltage, VCE(SAT) (V) TYPICAL CHARACTERISTICS UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R221-011.E