Datasheet

UTC KSC945
NPN EPITAXIAL SILICON TRANSISTOR
AUDIO FREQUENCY AMPLIFIER
HIGH FREQUENCY OSC NPN
TRANSISTOR
DESCRIPTION
The UTC KSC945 is an audio frequency amplifier high
frequency OSC NPN transistor.
1
FEATURES
*Collector-Base voltage:
BVCBO=60V
*Collector current up to 150mA
*High hFE linearity
*Complimentary to KSA733
TO-92
1:EMITTER
2: BASE
3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified )
PARAMETER
SYMBOL
VALUE
UNIT
VCBO
VCEO
VEBO
Pc
Ic
IB
Tj
TSTG
60
50
5
250
150
50
150
-55 ~ +150
V
V
V
mW
mA
mA
°C
°C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Dissipation(Ta=25°C)
Collector Current
Base Current
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain(note)
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
BVCBO
BVCEO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
NF
Ic=100µA, IE=0
IC=10mA,IB=0
VCB=40V,IE=0
VEB=3V,Ic=0
VCE=6V,Ic=1mA
Ic=100mA,IB=10mA
VCE=10V,Ic=50mA
VCB=10V,IE=0,f=1MHz
Ic=-0.1mA,VCE=6V
RG=10kΩ,f=100Hz
60
50
UTC
UNISONIC TECHNOLOGIES
TYP
40
100
0.1
190
2.0
4.0
MAX
100
100
700
0.3
3.0
6.0
CO. LTD
UNIT
V
V
nA
nA
V
MHz
pF
dB
1
QW-R201-060,A
UTC KSC945
NPN EPITAXIAL SILICON TRANSISTOR
CLASSIFICATION OF hFE
RANK
RANGE
R
40-80
O
70-140
Y
120-240
G
200-400
L
350-700
TYPICAL PERFORMANCE CHARACTERISTICS
Fig.1 Static characteristics
Fig.2 DC current Gain
2
10
IB=300 µA
60
IB=250 µA
IB=200 µA
40
IB=150 µA
IB=100 µA
20
IB=50 µA
0
4
8
12
16
2
10
1
10
0
10
0
20
Ic,Collector current (mA)
VCE=6V
80
HFE, DC current Gain
Ic,Collector current (mA)
Fig.3 Base-Emitter on Voltage
3
10
100
-1
10
0
10
1
10
2
10
0
0.2
0.4
0.6
0.8
Ic,Collector current (mA)
Base-Emitter voltage (V)
Fig.4 Saturation voltage
Fig.5 Current gain-bandwidth
product
Fig.6 Collector output
Capacitance
3
10
VBE(sat)
2
10
VCE(sat)
0
10
1
10
2
10
Ic,Collector current (mA)
3
10
VCE=6V
2
10
1
10
0
10
1.0
2
10
Cob,Capacitance (pF)
3
10
Current Gain-bandwidth
product,f T(MHz)
Saturation voltage (MV)
0
10
-1
10
3
10
Ic=10*IB
-1
10
VCE=6V
Collector-Emitter voltage ( V)
4
10
1
10
1
10
f=1MHz
IE=0
1
10
0
10
-1
10
-1
10
0
10
1
10
2
10
0
10
Ic,Collector current (mA)
1
10
2
10
3
10
Collector-Base voltage (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES
CO. LTD
2
QW-R201-060,A