Datasheet

UNISONIC TECHNOLOGIES CO., LTD
2N4403
PNP SILICON TRANSISTOR
PNP GENERAL PURPOSE
AMPLIFIER
„
DESCRIPTION
The UTC 2N4403 is designed for use as a general purpose
amplifier and switch requiring collector currents up to 500mA.
*Pb-free plating product number: 2N4403L
„
ORDERING INFORMATION
Ordering Number
Normal
Lead Free Plating
2N4403-T92-B
2N4403L-T92-B
2N4403-T92-K
2N4403L-T92-K
Package
TO-92
TO-92
Pin Assignment
1
2
3
E
B
C
E
B
C
Packing
Tape Box
Bulk
發
行
FOR
ISSUE
JUL 17.2007
文 件 管 理 中 心
UTC
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
Doc.Control
Center
1 of 5
QW-R201-053.D
2N4403
„
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25℃, unless otherwise specified)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Total Device Dissipation
Derate above 25℃
RATINGS
UNIT
-40
V
-40
V
-5
V
-600
mA
625
mW
PC
5.0
mW/℃
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
„
THERMAL DATA (Ta=25℃, unless otherwise specified)
CHARACTERISTIC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
„
SYMBOL
VCBO
VCEO
VEBO
IC
SYMBOL
θJA
θJC
RATINGS
200
83.3
UNIT
℃/W
℃/W
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Collector-Emitter Breakdown
BVCEO IC=-1mA, IB=0
Voltage (Note)
Collector-Base Breakdown Voltage BVCBO Ic=-0.1mA, IE=0
Emitter-Base Breakdown Voltage
BVEBO IE=-0.1mA, IC=0
Collector Cut-off Current
ICEX
VCE=-35V, VEB=-0.4V
Base Cut-off Current
IBEX
VCE=-35V, VBE=-0.4V
ON CHARACTERISTICS*
hFE1
VCE=-1V,IC=-0.1mA
hFE2
VCE=-1V,IC=-1mA
DC Current Gain
hFE3
VCE=-1V,IC=-10mA
hFE4
VCE=-2V, IC=-150mA (Note)
hFE5
VCE=-2V, IC=-500mA (Note)
VCE(SAT1) IC=-150mA, IB=-15mA
Collector-Emitter Saturation
Voltage
VCE(SAT2) IC=-500mA, IB=-50mA
VBE(SAT1) IC=-150mA, IB=-15mA(Note)
Base-Emitter Saturation Voltage
VBE(SAT2) IC=-500mA, IB=-50mA
MIN
TYP
MAX
-40
V
-40
-5
V
V
µA
µA
-0.1
-0.1
30
60
100
100
20
-0.75
300
-0.4
-0.75
-0.95
-1.3
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
fT
VCE=-10V, IC=-20mA, f=100MHz
200
Collector-Base Capacitance
Ccb
VCB=-10V, IE=0, f=140kHz
8.5
Emitter-Base Capacitance
Ceb
VBE=-0.5V, IC=0, f=140kHz
30
Input Impedance
hIE
VCE=-10V, IC=-1mA, f=1kHz
1.5
15
Voltage Feedback Ratio
hRE
VCE=-10V, IC=-1mA, f=1kHz
0.1
8
Small-Signal Current Gain
hFE
VCE=-10V, IC=-1mA, f=1kHz
60
500
FOR ISSUE
Output Admittance
hOE
VCE=-10V, IC=-1mA, f=1kHz
1.0
100
JUL 17.2007
SWITCHING CHARACTERISTICS
Delay Time
tD
文 件 管 理 中 15心
VCC=-30V, IC=-150mA IB1=-15mA
Rise Time
tR
20
UTC
Doc.Control
Center
VCC=-30V, IC=-150mA
Storage Time
tS
225
IB1= IB2=-15mA
30
Fall Time
tF
Note: Pulse test: Pulse Width≤300µs, Duty Cycle≤2%
發
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
UNIT
行
V
V
V
V
MHz
pF
pF
kΩ
×10-4
µmbos
ns
ns
ns
ns
2 of 5
QW-R201-053.D
2N4403
„
PNP SILICON TRANSISTOR
TEST CIRCUIT
-30V
200
Ω
0
-16V
≤220ns
1KΩ
50Ω
Figure 1. Saturated Turn-On Switching Timer
1.5V -6V
Note: BVEBO=5V
0
-30V
≤220ns
1k
37Ω
1KΩ
50Ω
Figure 2. Saturated Turn-Off Switching Timer
發
行
FOR
ISSUE
JUL 17.2007
文 件 管 理 中 心
UTC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Doc.Control
Center
3 of 5
QW-R201-053.D
2N4403
Base-Emitter Voltage, VBE(SAT) (V)
Base-Emitter OnVoltage, VBE(ON )(V)
DC Current Gain, hFE
Collector-Emitter Voltage, VCE(SAT) (V)
TYPICAL CHARACTERISTICS
-100
Collector-Cutoff Current
vs. Ambient Temperature
20
Input and Output
Capacitance vs. Reverse Bias Voltage
VCB=-35V
16
-10
Capacitance (pF)
Collector Current,ICBO (nA)
„
PNP SILICON TRANSISTOR
-1
-0.1
-0.01
25
50
75
100 125
Ambient Temperature, TA (℃)
Cib
12
8
4
0
-0.1
FOR
www.unisonic.com.tw
行
ISSUE
JUL 17.2007
-1
-10
-50
文 件 Bias
管 Voltage
理 中(V) 心
Reverse
UTC
UNISONIC TECHNOLOGIES CO., LTD
Cob
發
Doc.Control
Center
4 of 5
QW-R201-053.D
2N4403
PNP SILICON TRANSISTOR
發
行
UTC assumes no responsibility for equipment failures that result from
using
FO
R products
I S SatUvalues
E that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
JUL described
17.2007or contained
other parameters) listed in products specifications of any and all UTC products
herein. UTC products are not designed for use in life support appliances,
or systems
文 件devices
管 理
中 心 where
malfunction of these products can be reasonably expected to result inUTC
personal
injury. Reproduction
in
Doc.Control
Center
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 5
QW-R201-053.D