Datasheet

UNISONIC TECHNOLOGIES CO., LTD
2N5551
NPN SILICON TRANSISTOR
HIGH VOLTAGE SWITCHING
TRANSISTOR

FEATURES
* High collector-emitter voltage:
VCEO=160V
* High current gain

APPLICATIONS
* Telephone switching circuit
* Amplifier

ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
2N5551G-x-AB3-R
SOT-89
2N5551L-x-T92-B
2N5551G-x-T92-B
TO-92
2N5551L-x-T92-K
2N5551G-x-T92-K
TO-92
2N5551L-x-T92-A-B
2N5551G-x-T92-A-B
TO-92
2N5551L-x-T92-A-K
2N5551G-x-T92-A-K
TO-92
Note: Pin Assignment: B: Base
C: Collector
E: Emitter

Pin Assignment
1
2
3
B
C
E
E
B
C
E
B
C
E
C
B
E
C
B
Packing
Tape Reel
Tape Box
Bulk
Tape Box
Bulk
MARKING
SOT-89
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
TO-92
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
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25C, unless otherwise specified)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
RATINGS
UNIT
180
V
160
V
6
V
TO-92
625
mW
Collector Dissipation
PC
SOT-89
500
mW
Collector Current
IC
600
mA
Junction Temperature
TJ
+150
C
Storage Temperature
TSTG
-55 ~ +150
C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

SYMBOL
VCBO
VCEO
VEBO
ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
BVCBO IC=100μA, IE=0
Collector-Emitter Breakdown Voltage BVCEO IC=1mA, IB=0
Emitter-Base Breakdown Voltage
BVEBO IE=10A, IC=0
Collector Cut-off Current
ICBO
VCB=120V, IE=0
Emitter Cut-off Current
IEBO
VBE=4V, IC=0
hFE1
VCE=5V, IC=1mA
DC Current Gain(Note)
hFE2
VCE=5V, IC=10mA
hFE3
VCE=5V, IC=50mA
IC=10mA, IB=1mA
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=50mA, IB=5mA
IC=10mA, IB=1mA
Base-Emitter Saturation Voltage
VBE(SAT)
IC=50mA, IB=5mA
Current Gain Bandwidth Product
fT
VCE=10V, IC=10mA, f=100MHz
Output Capacitance
COB
VCB=10V, IE=0 f=1MHz
IC=0.25mA, VCE=5V
Noise Figure
NF
RS=1kΩ, f=10Hz ~ 15.7kHz
Note: Pulse test: PW<300μs, Duty cycle<2%

MIN
180
160
6
TYP
MAX
50
50
80
80
80
100
160
UNIT
V
V
V
nA
nA
400
0.15
0.2
1
1
300
6.0
V
V
V
V
MHz
pF
8
dB
CLASSIFICATION OF hFE2
RANK
RANGE
A
80-170
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
B
150-240
C
200-400
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TYPICAL CHARACTERISTICS
Collector Output Capacitance
DC Current Gain
103
10
VCE=5V
8
f=1MHz
IE=0
102
6
4
101
2
0
10
0
101
Collector-Base Voltage (V)
100
10-1
102
100
101
102
103
Collector Current, IC (mA)
Saturation Voltage (V)
Collector Current, IC (mA)

NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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