UNISONIC TECHNOLOGIES CO., LTD 2SB772 PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage * Complement to 2SD882 ORDERING INFORMATION Ordering Number Lead Free 2SB772L-x-T60-K 2SB772L-x-T6C-K 2SB772L-x-TM3-T 2SB772L-x-TN3-R 2SB772L-x-T9N-B 2SB772L-x-T9N-K Note: Pin assignment: E: Emitter Package Halogen Free 2SB772G-x-T60-K TO-126 2SB772G-x-T6C-K TO-126C 2SB772G-x-TM3-T TO-251 2SB772G-x-TN3-R TO-252 2SB772G-x-T9N-B TO-92NL 2SB772G-x-T9N-K TO-92NL B: Base C: Collector www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd Pin Assignment 1 2 3 E C B E C B B C E B C E E C B E C B Packing Bulk Bulk Tube Tape Reel Tape Box Bulk 1 of 5 QW-R213-016.G 2SB772 PNP SILICON TRANSISTOR MARKING PACKAGE MARKING TO-251 / TO-252 TO-126 / TO-126C TO-92NL UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R213-016.G 2SB772 PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA= 25°C, unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage DC Collector Current Pulse Base Current TO-92NL Collector Dissipation TO-126/TO-126C TO-251/TO-252 SYMBOL VCBO VCEO VEBO IC ICP IB RATINGS -40 -30 -7 -3 -7 -0.6 0.5 1 1 PC UNIT V V V A A A W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER TO-126/ TO-126C Junction to Case TO-251/ TO-252 TO-92NL RATING 12.5 12.5 25 θJC UNIT °C/W ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current SYMBOL BVCBO BVCEO BVEBO ICBO ICEO IEBO hFE1 DC Current Gain (Note) hFE2 Collector-Emitter Saturation Voltage VCE(SAT) Base-Emitter Saturation Voltage VBE(SAT) Current Gain Bandwidth Product fT Output Capacitance COB Note: Pulse test: PW ≤ 300μs, Duty Cycle ≤ 2% SYMBOL TEST CONDITIONS IC=-100μA, IE=0 IC=-1mA, IB=0 IE=-100μA, IC=0 VCB=-30V ,IE=0 VCE=-30V ,IB=0 VEB=-5V, IC=0 VCE=-2V, IC=-20mA VCE=-2V, IC=-1A IC=-2A, IB=-0.2A IC=-2A, IB=-0.2A VCE=-5V, IC=-0.1A VCB=-10V, IE=0,f=1MHz MIN -40 -30 -7 TYP MAX -1000 -1000 -1000 30 100 200 150 -0.3 -1.0 80 45 400 -0.5 -2.0 UNIT V V V nA nA nA V V MHz pF CLASSIFICATION OF hFE2 RANK RANGE Q 100 ~ 200 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw P 160 ~ 320 E 200 ~ 400 3 of 5 QW-R213-016.G 2SB772 ■ PNP SILICON TRANSISTOR TYPICAL CHARACTERICS Derating Curve of Safe Operating Areas Static Characteristics 150 1.6 -IB=9mA -IB=8mA -IB=7mA 100 1.2 -IB=6mA S/ b -IB=5mA ion at ip ss Di 0.8 -IB=4mA 50 d ite 0.4 lim -IB=3mA lim ite d -IB=2mA -IB=1mA 0 0 0 4 8 12 16 20 -50 0 -Collector-Emitter voltage (V) 50 100 150 200 Case Temperature, Tc (℃) Power Derating Collector Output Capacitance 10 3 12 10 8 10 4 0 10 -50 0 50 100 150 IE=0 f=1MHz 2 1 0 200 10 0 10 Case Temperature, Tc (℃) 10 -2 10 -3 -Collector-Base Voltage(v) Current GainBandwidth Product Safe Operating Area 3 10 1 Ic(max),Pulse Ic(max),DC 10 mS 1m S S 1m 0. 10 -1 VCE=5V 10 2 10 0 IB=8mA 10 10 1 10 0 10 -2 10 -1 10 0 10 1 Collector Current, Ic (A) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 10 -1 -2 10 0 10 1 10 2 Collector-Emitter Voltage 4 of 5 QW-R213-016.G 2SB772 ■ PNP SILICON TRANSISTOR TYPICAL CHARACTERICS(Cont.) DC Current Gain Saturation Voltage 3 10 4 10 -Saturation Voltage (mV) DC Current Gain, hFE VCE=-2V 2 10 1 10 0 10 0 10 1 10 2 10 3 10 4 10 -Collector Current, Ic (mA) VBE(SAT) 3 10 2 10 VCE(SAT) 1 10 0 10 0 10 1 10 2 10 3 10 4 10 -Collector Current, Ic (mA) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R213-016.G