Datasheet

UNISONIC TECHNOLOGIES CO., LTD
MMBT3904
NPN EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE
APPLIATION

FEATURES
* Collector-Emitter Voltage: VCEO=40V
* Collector Dissipation:
PD(MAX)=350mW
* Complementary to UTC MMBT3906

ORDERING INFORMATION
Ordering Number
Note:

MMBT3904G-AE3-R
MMBT3904G-AL3-R
MMBT3904G-AN3-R
Pin Assignment: E: Emitter
B: Base
Package
SOT-23
SOT-323
SOT-523
C: Collector
Pin Assignment
1
2
3
E
B
C
E
B
C
E
B
C
Packing
Tape Reel
Tape Reel
Tape Reel
MARKING
1A.G
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Copyright © 2014 Unisonic Technologies Co., Ltd
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
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING ( TA=25°С, unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
200
mA
Collector Dissipation
PC
350
mW
Junction Temperature
TJ
+150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
SYMBOL
VCBO
VCEO
VEBO
VCE(SAT)1
Collector-Emitter Saturation Voltage (Note)
VCE(SAT)2
VBE(SAT)1
Base-Emitter Saturation Voltage (Note)
VBE(SAT)2
Collector Cut-Off Current
ICEX
Base Cut-Off Current
IBL
hFE1
hFE2
DC Current Gain (Note)
hFE3
hFE4
hFE5
Current Gain Bandwidth Product
fT
Output Capacitance
COB
Turn On Time
tON
Turn Off Time
tOFF
Note: Pulse test: PW<=300s, Duty Cycle<=2%
TEST CONDITIONS
IC=10A, IE=0
IC=1mA, IB=0 (Note)
IE=10A, IC=0
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=30V, VEB=3V
VCE=30V, VEB=3V
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=50mA
VCE=1V, IC=100mA
VCE=20V, IC=10mA, f=100MHz
VCB=5V, IE=0, f=1MHz
VCC=3V,VBE=0.5V,IC=10mA,IB1=1mA
IB1=1B2=1mA
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
60
V
40
V
6
V
0.2
V
0.3
V
0.65
0.85 V
0.95 V
50
nA
50
nA
40
70
100
300
60
30
300
MHz
4
pF
70
ns
250 ns
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Current Gain-Bandwidth Product, fT (MHz)
TYPICAL CHARACTERISTICS
DC Current Gain, hFE

NPN EPITAXIAL SILICON TRANSISTOR
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
5
3
Output Capacitance
6
IC=10 IB
IE=0
f=1MHz
5
VBE(sat)
1
4
0.5
0.3
3
0.1
2
VCE(sat)
0.05
0.03
0.01
0.1 0.3 0.5 1
3 5 10
1
3050 100
Collector current, IC (mA)
0
1
3
5
10
30 50 100
Collector-Base Voltage, VCB (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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