Datasheet

UNISONIC TECHNOLOGIES CO., LTD
MMBT3906
PNP SILICON TRANSISTOR
GENERAL PURPOSE
APPLIATION
FEATURES

* Collector-Emitter Voltage: VCEO=40V
* Collector Dissipation:
PD(MAX)=350mW
* Complementary to UTC MMBT3904

ORDERING INFORMATION
Ordering Number
Note:

MMBT3906G-AE3-R
MMBT3906G-AL3-R
MMBT3906G-AN3-R
Pin Assignment: E: Emitter
B: Base
Package
SOT-23
SOT-323
SOT-523
C: Collector
1
E
E
E
Pin Assignment
2
3
B
C
B
C
B
C
Packing
Tape Reel
Tape Reel
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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MMBT3906

PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector Base Voltage
VCBO
-40
V
Collector Emitter Voltage
VCEO
-40
V
Emitter Base Voltage
VEBO
-5
V
Collector Current
IC
-200
mA
Base Current
IB
-50
mA
Collector Dissipation
PC
350
mW
Junction Temperature
TJ
150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified)
PARAMETER
Collector Cut-off Current
Base Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
(Note)
Emitter-Base Breakdown Voltage
DC Current Gain (Note)
Collector-Emitter Saturation Voltage (Note)
Base-Emitter Saturation Voltage
Transition Voltage
Output Capacitance
Turn on Time
SYMBOL
TEST CONDITIONS
ICEX
VCE=-30V, VEB=-3V
IBL
VCE=-30V, VEB=-3V
VCBO
IC=-10A,IE=0
-40
VCEO
IC=-1mA, IB=0
VEBO
hFE1
hFE2
hFE3
hFE4
hFE5
IE=-10A, IC=0
-5
VCE=-1V, IC=-0.1mA
60
VCE=-1V, IC=-1mA
80
VCE=-1V, IC=-10mA
100
VCE=-1V, IC=-50mA
60
VCE=-1V, IC=-100mA
30
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
-0.65
IC=-50mA, IB=-5mA
VCE=-20V, IC=-10mA, f=100MHz 250
VCB=-5V,IE=0, f=1MHz
VCC=-3V, VBE=-0.5V, IC=-10mA,
IB1=-1mA
IB1=1B2=-1mA
VCE(SAT)1
VCE(SAT)2
VBE(SAT)1
VBE(SAT)2
fT
Cob
tON
Turn off Time
tOFF
Note: Pulse test: PW≦300s, Duty Cycle≦2%
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
MAX UNIT
-50
nA
-50
nA
V
-40
V
V
300
-0.25
-0.4
-0.85
-0.95
4.5
V
V
V
V
MHz
pF
70
ns
300
ns
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TYPICAL CHARACTERISTICS
DC Current Gain
Current Gain-Bandwidth Product
1000
DC Current Gain, hFE
300
VCE=10V
100
50
VCE=1V
30
10
-1
-3 -5 -10
Current Gain-Bandwidth Product, fT(MHz)
1000
VCE=-1V
500
-30 -50 -100 -300 -1000
VCE=-20V
500
300
100
50
30
10
-0.1 -0.3 -0.5 -1
-3 -5 -10 -30 -50 -100
Collector Current, IC(mA)
Collector Current, IC(mA)
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Output Capacitance
-10
-5
-3
12
IC=10 IB
VBE(SAT)
-1
-0.5
-0.3
-0.1
VCE(SAT)
-0.05
-0.03
Capacitance, Cob (pF)
Saturation Voltage, VBE(SAT), VCE(SAT) (V)

PNP SILICON TRANSISTOR
IE=0
f=100KHz
10
8
6
4
2
-0.01
-0.1 -0.3 -0.5 -1
-3 -5 -10 -30 -50 -100
Collector Current, IC(mA)
0
-1
-3 -5
-10 -30 -30 -50 -100
Collector-Base Voltage, VCB(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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