Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UH11K
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
DUAL BIAS RESISTOR
TRANSISTORS

DESCRIPTION
The UTC UH11K is a dual bias resistor transistors, it uses UTC’s
advanced technology to provide customers with saving board space,
reducing component count, etc.
The UTC UH11K is suitable for low power surface mount
applications, etc.

FEATURES
* Reducing component count
* Saving board space

EQUIVALENT CIRCUIT

ORDERING INFORMATION
Ordering Number
Note:
UH11KG-AL6-R
UH11KG-AN6-R
Pin Assignment: E: Emitter
UH11KG-AL6-R

Package
B: Base
SOT-363
SOT-563
C: Collector
1
E1
E1
Pin Assignment
2
3
4
5
B1 C2 E2 B2
B1 C2 E2 B2
(1)Packing Type
(1) R: Tape Reel
(2)Package Type
(2) AL6: SOT-363, AN6: SOT-563
(3)Green Package
(3) G: Halogen Free and Lead Free
6
C1
C1
Packing
Tape Reel
Tape Reel
MARKING
SOT-363
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
SOT-563
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
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
RATINGS
UNIT
50
V
50
V
100
mA
SOT-363
150
mW
Power Dissipation
PD
SOT-563
120
mW
Junction Temperature
TJ
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

SYMBOL
VCBO
VCEO
IC
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BVCBO IC=10µA, IE=0
50
Collector-Emitter Breakdown Voltage (Note 1)
BVCEO IC=2.0mA, IB=0
50
Collector-Base Cutoff Current
ICBO
VCB=50V, IE=0
Collector-Emitter Cutoff Current
ICEO
VCE=50V, IB=0
Emitter-Base Cutoff Current
IEBO
VEB=6.0V, IC=0
ON CHARACTERISTICS (Note 2)
DC Current Gain
hFE
VCE=10V, IC=5.0mA
35
Output Voltage (on)
VOL
VCC=5.0V, VB=2.5V, RL=1.0 kΩ
ON CHARACTERISTICS (Note 2)
Input Resistor
R1
7.0
Resistor Ratio
R1/R2
0.8
Notes: 1. Pulse Test: Pulse Width<300µs, Duty Cycle<2.0%
2. Pulse Test: Pulse Width<300ms, Duty Cycle<2.0%
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TYP MAX UNIT
100
500
0.5
V
V
nA
nA
mA
0.2
V
13
1.2
kΩ
kΩ
60
10
1.0
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Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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