Datasheet

UNISONIC TECHNOLOGIES CO., LTD
13003BS
Preliminary
NPN SILICON TRANSISTOR
NPN SILICON BIPOLAR
TRANSISTORS FOR LOW
FREQUENCY AMPLIFICATION

DESCRIPTION
The UTC 13003BS is a silicon NPN power switching transistor; it
uses UTC’s advanced technology to provide customers high
collector-base breakdown voltage, low reverse leakage current and
high reliability, etc.
The UTC 13003BS is suitable for electronic ballast power switch
circuit and the compact electronic energy-saving light.

FEATURES
* High collector-base breakdown voltage
* Low reverse leakage current
* High reliability

EQUIVALENT CIRCUIT

ORDERING INFORMATION
Ordering Number
Lead Free
13003BSL-TM3-T
13003BSL-T60-K
13003BSL-T92-B
13003BSL-T92-K
13003BSL-T92-R
Note: Pin Assignment: B: Base
Halogen Free
13003BSG-TM3-T
13003BSG-T60-K
13003BSG-T92-B
13003BSG-T92-K
13003BSG-T92-R
C: Collector
E: Emitter
Package
TO-251
TO-126
TO-92
TO-92
TO-92
Pin Assignment
1
2
3
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
Packing
Tube
Bulk
Tape Box
Bulk
Tape Reel
13003BSL-TM3-T
(1)Packing Type
(1) T: Tube, B: Bluk, K: Bulk, R: Tape Reel
(2)Package Type
(2) TM3: TO-251, T60: TO-126, T92: TO-92
(3)Lead Free
(3) L: Lead Free, G: Halogen Free
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
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13003BS

Preliminary
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
RATINGS
UNIT
800
V
450
V
9
V
2
A
Continuous
Collector Current
Peak
4
A
1
A
Continuous
Base Current
Peak
2
A
TO-251
10
W
Power Dissipation (TC=25°C)
PD
TO-126
20
W
TO-92
1
W
Junction Temperature
TJ
150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case

SYMBOL
TO-251
TO-126
TO-92
TO-251
TO-126
TO-92
θJA
θJC
RATING
90
100
150
12.5
7.5
100
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise noted)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector-Emitter Cut-Off Current
Emitter-Base Cut-Off Current
DC Current Gain (Note)
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
hFE
Low current and high current hFE2 hFE1 ratio
hFE1/ hFE2
Collector-Emitter Saturation Voltage (Note)
VCE(SAT)
Base-Emitter Saturation Voltage (Note)
VBE(SAT)
Storage Time
tS
Rise Time
tR
Fall Time
tF
Transition Frequency
fT
Note: Pulse test, pulse width tp≤300µs, Duty cycle≤2%.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TEST CONDITIONS
IC=1mA, IE=0
IC=1mA, IB=0
IE=1mA, IC=0
VCB=800V, IE=0
VCE=450V, IB=0
VEB=9V, IC=0
VCE=5V, IC=0.2mA
hFE1: VCE=5V, IC=5mA
hFE2: VCE=5V, IC=0.2A
IC=0.5A, IB=0.1A
IC=0.5A, IB=0.1A
MIN TYP MAX
800
450
9
0.1
0.1
0.1
20
35
0.75
2
UI9600, IC=0.25A
VCE=10V, IC=0.1A, f=1MHz
UNIT
V
V
V
mA
mA
mA
5
0.8
1.5
5
2
2
V
V
μs
μs
μs
MHz
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13003BS
Preliminary
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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