Datasheet

UNISONIC TECHNOLOGIES CO., LTD
MMDT2907A
Preliminary
DUAL TRANSISTOR
NPN & PNP GENERAL
PURPOSE AMPLIFIER

DESCRIPTION
The UTC MMDT2907A is an NPN & PNP general purpose
amplifier. it’s suitable for a medium power amplifier and switch
requiring collector currents up to 500mA.

FEATURES
* Low VCE(SAT
* High collector current gain under high collector current condition

EQUIVALENT CIRCUIT

ORDERING INFORMATION
Ordering Number
Package
MMDT2907AG-AL6-R
SOT-363
MMDT2907AG-AL6-R

1
E1
Pin Assignment
2
3
4
5
B1 C2 E2 B2
(1)Packing Type
(1) R: Tape Reel
(2)Package Type
(2) AL6: SOT-363
(3)Green Package
(3) G: Halogen Free and Lead Free
6
C1
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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QW-R218-028.b
MMDT2907A

Preliminary
DUAL TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted) (Note 1, 2)
PARAMETER
SYMBOL
RATINGS
UNIT
30
V
Collector-Emitter Voltage
VCEO
-30
V
60
V
Collector-Base Voltage
VCBO
-60
V
5.0
V
Emitter-Base Voltage
VEBO
-5.0
V
500
mA
Collector Current - Continuous
IC
-500
mA
300
mW
Total Device Dissipation
PD
Derate above 25°C
2.4
mW/°C
Junction Temperature
TJ
-55~+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. These ratings are limiting values above which the serviceability of any semiconductor device may be
impaired
3. All voltages (V) and currents (A) are negative polarity for PNP transistors.
TR1
TR2
TR1
TR2
TR1
TR2
TR1
TR2

THERMAL DATA (TA=25°C, unless otherwise noted)
PARAMETER
Thermal Resistance, Junction to Ambient

SYMBOL
θJA
RATINGS
415
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise noted) (Note 2)
TR1
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (Note 1) V(BR)CEO IC=10mA, IB=0
Collector-Base Breakdown Voltage
V(BR)CBO IC=10µA, IE=0
Emitter-Base Breakdown Voltage
V(BR)EBO IE=10µA, IC=0
Collector Cutoff Current
ICBO
VCB=50V, IE=0
Emitter Cutoff Current
IEBO
VEB=3.0V, IC=0
ON CHARACTERISTICS
IC=1.0mA, VCE=10V
IC=10mA, VCE=10V
DC Current Gain
hFE
IC=150mA, VCE=10V (Note 1)
IC=300mA, VCE=10V (Note 1)
IC=150mA, IB=15mA
Collector-Emitter Saturation Voltage (Note 1)
VCE(sat)
IC=300mA, IB=30mA
Base-Emitter Saturation Voltage (Note 1)
VBE(sat) IC=150mA, IB=15mA
SMALL SIGNAL CHARACTERISTICS
IC=50mA, VCE=20V,
Current Gain - Bandwidth Product
fT
f=100MHz
Output Capacitance
COBO
VCB=10V, IE=0, f=100kHz
Input Capacitance
CIBO
VEB=2.0V, IC=0, f=100kHz
IC=100µA, VCE=10V,
Noise Figure
NF
RS=1.0kΩ, f=1.0kHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP MAX UNIT
30
60
5.0
30
30
V
V
V
nA
nA
0.4
1.4
1.3
V
V
V
50
75
100
30
250
MHz
4.0
12
pF
pF
2.0
dB
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
Preliminary
DUAL TRANSISTOR
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
SWITCHING CHARACTERISTICS
Turn-on Time
tON
VCC=30V, IC=150mA,
Delay Time
tD
IB1=15mA
Rise Time
tR
Turn-off Time
tOFF
VCC=6.0V, IC=150mA,
Storage Time
tS
IB1=IB2=15mA
Fall Time
tF
Notes: 1. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2.0%
2. All voltages (V) and currents (A) are negative polarity for PNP transistors.
MIN
TYP MAX UNIT
30
8.0
20
80
60
20
ns
ns
ns
ns
ns
ns
TR2
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (Note 1) V(BR)CEO IC=-10mA, IB=0
Collector-Base Breakdown Voltage
V(BR)CBO IC=-10µA, IE=0
Emitter-Base Breakdown Voltage
V(BR)EBO IE=-10µA, IC=0
Collector Cutoff Current
ICBO
VCB=-50V, IE=0
Emitter Cutoff Current
IEBO
VEB=-3.0V, IC=0
ON CHARACTERISTICS
IC=-1.0mA, VCE=-10V
IC=-10mA, VCE=-10V
DC Current Gain
hFE
IC=-150mA, VCE=-10V (Note 1)
IC=-300mA, VCE=-10V (Note 1)
IC=-150mA, IB=-15mA
Collector-Emitter Saturation Voltage (Note 1)
VCE(sat)
IC=-300mA, IB=-30mA
Base-Emitter Saturation Voltage (Note 1)
VBE(sat) IC=-150mA, IB=-15mA
SMALL SIGNAL CHARACTERISTICS
IC=-50mA, VCE=-20V,
Current Gain - Bandwidth Product
fT
f=100MHz
Output Capacitance
COBO
VCB=-10V, IE=0, f=100kHz
Input Capacitance
CIBO
VEB=-2.0V, IC=0, f=100kHz
IC=-100µA, VCE=-10V,
Noise Figure
NF
RS=1.0kΩ, f=1.0kHz
SWITCHING CHARACTERISTICS
Turn-on Time
tON
VCC=-30V, IC=-150mA,
Delay Time
tD
IB1=-15mA
Rise Time
tR
Turn-off Time
tOFF
VCC=6.0V, IC=-150mA,
Storage Time
tS
IB1=IB2=-15mA
Fall Time
tF
Notes: 1. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2.0%
2. All voltages (V) and currents (A) are negative polarity for PNP transistors.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP MAX UNIT
-30
-60
-5.0
-30
-30
V
V
V
nA
nA
-0.4
-1.4
-1.3
V
V
V
50
75
100
30
250
MHz
4.0
12
pF
pF
2.0
dB
30
8.0
20
80
60
20
ns
ns
ns
ns
ns
ns
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MMDT2907A
Preliminary
DUAL TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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