UNISONIC TECHNOLOGIES CO., LTD 2SC2073 Preliminary NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION The UTC 2SC2073 is an NPN silicon power transistors, it uses UTC’s advanced technology to provide customers with high collector base voltage, etc. The UTC 2SC2073 is suitable for general purpose Power amplifier, vertical output application. FEATURES * High collector base voltage ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 2SC2073L- TA3-T 2SC2073G-TA3-T TO-220 Note: Pin Assignment: B: Base C: Collector E: Emitter Pin Assignment 1 2 3 B C E Packing Tube MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R221-021.a 2SC2073 Preliminary NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 150 V Collector-Emitter Voltage VCEO 150 V Emitter-Base Voltage VEBO 5.0 V 1.5 A Continuous IC Collector Current Peak ICM 3.0 A Base Current IB 0.5 A 25 W Total Power Dissipation @ TC=25°C PD Derate above 25°C 0.2 W/°C Junction Temperature TJ -55~+150 °C Storage Temperature TSTG -55~+150 °C Notes: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER Junction-to-Case SYMBOL θJC RATINGS 5.0 UNIT °C/W ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Collector-Base Breakdown Voltage BVCBO IC=1.0mA, IB=0 Collector-Emitter Breakdown Voltage BVCEO IC=5.0mA, IB=0 Emitter-Base Breakdown Voltage BVEBO IB=1.0mA, IC=0 Collector Cut-Off Current ICBO VCB=120V, IE=0 Emitter Cut-Off Current IEBO VEB=5.0V, IC=0 ON CHARACTERISTICS (Note 1) DC Current Gain hFE VCE=10V, IC=0.5A Collector-Emitter Saturation Voltage VCE(SAT) IC=0.5A, IB=50mA Base-Emitter On Voltage VBE(ON) IC=500mA, VCE=10V DYNAMIC CHARACTERISTICS Current-Gain -Bandwidth Product fT IC=0.5A,VCE=10V, f=1.0MHz Notes: Pulse Test: Pulse Width=300μs, Duty Cycle≤2.0%. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 150 150 5.0 40 0.65 4.0 10 10 V V V μA μA 140 1.5 0.85 V V MHz 2 of 3 QW-R221-021.a 2SC2073 Preliminary NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R221-021.a