UNISONIC TECHNOLOGIES CO., LTD UG1N120 Preliminary Insulated Gate Bipolar Transistor 5.3A, 1200V NPT SERIES N-CHANNEL IGBT DESCRIPTION The UTC UG1N120 is a NPT series N-Channel IGBT, it uses UTC’s advanced technology to provide the customers with a minimum on-state resistance, etc. The UTC UG1N120 is suitable for AC and DC motor controls, power supplies, and drivers for solenoids, relays and contactors, etc. FEATURES * Low conduction loss * Short circuit rating SYMBOL ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free UG1N120L-TA3-T UG1N120G-TA3-T TO-220 Note: Pin Assignment: G: Gate C: Collector E: Emitter UG1N120L-TA3-T Pin Assignment 1 2 3 G C E Packing Tube (1)Packing Type (1) T: Tube (2)Package Type (2) TA3: TO-220 (3)Green Package (3) L: Lead Free, G: Halogen Free and Lead Free MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 3 QW-R207-028.b UG1N120 Preliminary Insulated Gate Bipolar Transistor ABSOLUTE MAXIMUM RATING (TC=25°C, unless otherwise specified) PARAMETER Collector to Emitter Voltage Gate to Emitter Voltage Continuous Gate to Emitter Voltage Pulsed RATINGS UNIT 1200 V ±20 V ±30 V TC=25°C 5.3 A Collector Current Continuous IC TC=110°C 2.7 A Collector Current Pulsed (Note 1) ICM 6 A Power Dissipation Total at TC=25°C 60 W PD Power Dissipation Derating TC>25°C 0.476 W/°C Forward Voltage Avalanche Energy (Note 2) EAV 10 mJ Short Circuit Withstand Time (Note 3) at VGE=15V tSC 8 µs Short Circuit Withstand Time (Note 3) at VGE=12V tSC 13 µs Operating Junction Temperature Range TJ -55~+150 °C Storage Temperature Range TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by maximum junction temperature. 3. ICE=7A, L=400µH, VGE=15V, TJ=25°C. 4. VCE(PK)=840V, TJ=125°C, RG=82Ω. SYMBOL BVCES VGES VGEM THERMAL CHARACTERISTICS PARAMETER SYMBOL θJC Junction to Case RATINGS 2.1 UNIT °C/W ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER Collector to Emitter Breakdown Voltage Emitter to Collector Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Gate to Emitter Plateau Voltage On-State Gate Charge Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time SYMBOL TEST CONDITIONS BVCES IC=250µA, VGE=0V BVECS IC=10mA, VGE=0V TC=25°C ICES VCE=1200V TC=125°C TC=150°C TC=25°C VCE(SAT) IC=1.0A, VGE=15V TC=150°C VGE(TH) IC=50µA, VCE=VGE IGES VGE=±20V TJ=150°C, RG=82Ω, VGE=15V, SSOA L=2mH, VCE(PK)=1200V VGEP IC=1.0A, VCE=600V VGE=15V QG(ON) IC=1.0A, VCE=600V VGE=20V td(ON)I IGBT and Diode at TJ=25°C trl ICE=1.0A, VCE=30V, VGE=15V, td(OFF)I RG=82Ω tfl UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN 1200 15 TYP 20 6.0 2.5 3.8 7.1 MAX UNIT V V 250 µA µA 1.0 mA 2.9 V 4.3 V V ±250 nA 6 A 9.2 14 15 200 470 118 200 20 21 V nC nC ns ns ns ns 2 of 3 QW-R207-028.b UG1N120 Preliminary Insulated Gate Bipolar Transistor UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R207-028.b