Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UG1N120
Preliminary
Insulated Gate Bipolar Transistor
5.3A, 1200V NPT SERIES
N-CHANNEL IGBT

DESCRIPTION
The UTC UG1N120 is a NPT series N-Channel IGBT, it uses
UTC’s advanced technology to provide the customers with a
minimum on-state resistance, etc.
The UTC UG1N120 is suitable for AC and DC motor
controls, power supplies, and drivers for solenoids, relays and
contactors, etc.

FEATURES
* Low conduction loss
* Short circuit rating

SYMBOL

ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
UG1N120L-TA3-T
UG1N120G-TA3-T
TO-220
Note: Pin Assignment: G: Gate
C: Collector
E: Emitter
UG1N120L-TA3-T

Pin Assignment
1
2
3
G
C
E
Packing
Tube
(1)Packing Type
(1) T: Tube
(2)Package Type
(2) TA3: TO-220
(3)Green Package
(3) L: Lead Free, G: Halogen Free and Lead Free
MARKING
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
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UG1N120

Preliminary
Insulated Gate Bipolar Transistor
ABSOLUTE MAXIMUM RATING (TC=25°C, unless otherwise specified)
PARAMETER
Collector to Emitter Voltage
Gate to Emitter Voltage Continuous
Gate to Emitter Voltage Pulsed
RATINGS
UNIT
1200
V
±20
V
±30
V
TC=25°C
5.3
A
Collector Current Continuous
IC
TC=110°C
2.7
A
Collector Current Pulsed (Note 1)
ICM
6
A
Power Dissipation Total at TC=25°C
60
W
PD
Power Dissipation Derating TC>25°C
0.476
W/°C
Forward Voltage Avalanche Energy (Note 2)
EAV
10
mJ
Short Circuit Withstand Time (Note 3) at VGE=15V
tSC
8
µs
Short Circuit Withstand Time (Note 3) at VGE=12V
tSC
13
µs
Operating Junction Temperature Range
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by maximum junction temperature.
3. ICE=7A, L=400µH, VGE=15V, TJ=25°C.
4. VCE(PK)=840V, TJ=125°C, RG=82Ω.

SYMBOL
BVCES
VGES
VGEM
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
θJC
Junction to Case

RATINGS
2.1
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
SYMBOL
TEST CONDITIONS
BVCES
IC=250µA, VGE=0V
BVECS
IC=10mA, VGE=0V
TC=25°C
ICES
VCE=1200V
TC=125°C
TC=150°C
TC=25°C
VCE(SAT) IC=1.0A, VGE=15V
TC=150°C
VGE(TH) IC=50µA, VCE=VGE
IGES
VGE=±20V
TJ=150°C, RG=82Ω, VGE=15V,
SSOA
L=2mH, VCE(PK)=1200V
VGEP
IC=1.0A, VCE=600V
VGE=15V
QG(ON) IC=1.0A, VCE=600V
VGE=20V
td(ON)I
IGBT and Diode at TJ=25°C
trl
ICE=1.0A, VCE=30V, VGE=15V,
td(OFF)I
RG=82Ω
tfl
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
1200
15
TYP
20
6.0
2.5
3.8
7.1
MAX UNIT
V
V
250
µA
µA
1.0
mA
2.9
V
4.3
V
V
±250
nA
6
A
9.2
14
15
200
470
118
200
20
21
V
nC
nC
ns
ns
ns
ns
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UG1N120
Preliminary
Insulated Gate Bipolar Transistor
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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