Datasheet

UNISONIC TECHNOLOGIES CO., LTD
DBC2315
Preliminary
DUAL TRANSISTOR
DIGITAL TRANSISTOR
(BUILT-IN BIAS RESISTORS)

DESCRIPTION
* Both the DTB123Y chip and DTC115T chip in a SOT-26 package.
* NPN/PNP silicon transistor(Built-in resistor type)

FEATURES
* Built-in bias resistors that implies easy ON/OFF applications.
* The bias resistors are thin-film resistors with complete isolation to
allow positive input.

EQUIVALENT CIRCUITS

ORDERING INFORMATION
Ordering Number
Package
DBC2315G-AG6-R
Note: Pin Assignment: C: Collector
B: Bas
SOT-26
E: Emitter
DBC2315G-AG6-R
(1)Packing Type

1
C1
Pin Assignment
2
3
4
5
E1 C2 B2 E2
6
B1
Packing
Tape Reel
(1) R: Tape Reel
(2)Package Type
(2) AG6: SOT-26
(3)Green Package
(3) G: Halogen Free and Lead Free
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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DBC2315

Preliminary
DUAL TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
LIMITS
UNIT
-50
V
Collector-Base Voltage
VCBO
50
V
-50
V
Collector-Emitter Voltage
VCEO
50
V
-5
V
Emitter-Base Voltage
VEBO
5
V
-500
mA
Collector Current
IC
100
mA
Collector Power Dissipation
PC
200
mW
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
TR1
TR2
TR1
TR2
TR1
TR2
TR1
TR2

ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
TR1 (PNP)
PARAMETER
OFF CHARACTERISTICS
Input Voltage
Output Voltage
Input Current
Output Current
ON CHARACTERISTICS
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Input Resistance
Resistor Ratio
Transition Frequency (Note)
SYMBOL
VIN(OFF)
VIN(ON)
VOUT(ON)
IIN
IOUT(OFF)
hFE
R1
R2/R1
fT
TEST CONDITIONS
VCC =-5V, IOUT =-100μA
VOUT =-0.3V, IOUT =-20mA
IOUT/IIN =-50mA/-2.5mA
VIN=-5V
VCC =-50V, VIN =0V
VOUT =-5V, IOUT =-50mA
MIN
TYP
MAX
UNIT
-0.3
V
V
V
mA
μA
-2
-0.1
-0.3
-3.0
-0.5
2.2
4.5
200
2.86
5.5
TYP
MAX
UNIT
0.5
0.5
0.3
V
V
V
μA
μA
V
56
1.54
3.6
VCE =-10V, IE =50mA, f=100MHz
KΩ
MHz
TR2 (NPN)
PARAMETER
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
ON CHARACTERISTICS
DC Current Transfer Ratio
SMALL SIGNAL CHARACTERISTICS
Input Resistance
Transition Frequency (Note)
Note: Transition frequency of the device.
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(SAT)
hFE
R1
fT
TEST CONDITIONS
IC=50μA
IC=1mA
IE=50μA
VCB=50V
VEB=4V
IC=1mA, IB=0.1mA
50
50
5
VCE=5V, IC=1mA
100
250
600
70
100
250
130
VCE=10V, IE=-5mA, f=100MHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
KΩ
MHZ
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DBC2315
Preliminary
DUAL TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R222-008.b
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