Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UP1620
Preliminary
PNP EPITAXIAL SILICON TRANSISTOR
PNP SILICON POWER
TRANSISTOR

DESCRIPTION
The UTC UP1620 is a silicon PNP silicon power transistor, it
uses UTC’s advanced technology to provide the customers with
high collector-emitter breakdown voltage and ultra-high DC current
gain, etc.

FEATURES
* High collector-emitter breakdown voltage
* Ultra-high DC current gain

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UP1620L-x-T3P-T
UP1620G-x-T3P-T
Note: Pin Assignment: A: Anode, K: Cathode

Package
TO-3P
Pin Assignment
1
2
3
B
C
E
Packing
Tube
MARKING INFORMATION
PACKAGE
MARKING
TO-3P
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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UP1620

Preliminary
PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-160
V
Collector-Emitter Voltage
VCEO
-150
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-10
A
Base Current
IB
-1
A
Collector Power Dissipation (TC=25°C)
Pc
150
W
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
PARAMETER
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance

SYMBOL
ICBO
IEBO
VCEO
hFE
VCE(sat)
VBE(sat)
fT
Cob
TEST CONDITIONS
VCB=-160V, IE=0A
VEB=-5V, IC=0A
IC=-30mA
VCE=-4V, IC=-7A
IC=-7A, IB=-7mA
IC=-7A, IB=-7mA
VCE=-12V, IE=-2A
VCB=-10V, f=1MHz, IE=0A
MIN
TYP
-150
5000
MAX UNIT
-100 µA
-100 µA
V
30000
-2.5
V
-3.0
V
50
MHz
230
pF
CLASSIFICATION OF hFE
RANK
RANGE
O
5000 ~ 12000
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
P
6500 ~ 20000
Y
15000 ~ 30000
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UP1620
Preliminary
PNP EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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