BAV19WS, BAV20WS, BAV21WS Datasheet

BAV19WS, BAV20WS, BAV21WS
www.vishay.com
Vishay Semiconductors
Small Signal Switching Diodes, High Voltage
FEATURES
• Silicon epitaxial planar diodes
• For general purpose
• AEC-Q101 qualified
• Base P/N-E3 - RoHS-compliant, commercial
grade
MECHANICAL DATA
• Base P/N-HE3 - RoHS-compliant, AEC-Q101
qualified
Case: SOD-323
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Weight: approx. 4.3 mg
Packaging codes/options:


18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
TYPE
DIFFERENTIATION
ORDERING CODE
TYPE MARKING
INTERNAL
CONSTRUCTION
REMARKS
BAV19WS
VR = 100 V
BAV19WS-E3-08 or BAV19WS-E3-18
BAV19WS-HE3-08 or BAV19WS-HE3-18
A8
Single diode
Tape and reel
BAV20WS
VR = 150 V
BAV20WS-E3-08 or BAV20WS-E3-18
BAV20WS-HE3-08 or BAV20WS-HE3-18
A9
Single diode
Tape and reel
BAV21WS
VR = 200 V
BAV21WS-E3-08 or BAV21WS-E3-18
BAV21WS-HE3-08 or BAV21WS-HE3-18
AA
Single diode
Tape and reel
PART
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
VALUE
UNIT
BAV19WS
VR
100
V
BAV20WS
VR
150
V
BAV21WS
VR
200
V
BAV19WS
VRRM
120
V
BAV20WS
VRRM
200
V
BAV21WS
VRRM
250
V
IF
250
mA
IF(AV)
200
mA
f 50 Hz,  = 180°
IFRM
625
mA
t < 1 s, TJ = 25 °C
IFSM
1
A
Ptot
200
mW
SYMBOL
VALUE
UNIT
Thermal resistance junction to ambient air
RthJA
625
K/W
Thermal resistance junction to lead
RthJL
450
K/W
Tj
150
°C
Storage temperature range
Tstg
-65 to +150
°C
Operating temperature range
Top
-55 to +150
°C
Continuous reverse voltage
Repetitive peak reverse voltage
Forward continuous current (1)
Rectified current (average) half wave
rectification with resistive load (1)
Repetitive peak forward current
(1)
Surge forward current
Power dissipation
Note
(1) Valid provided that leads are kept at ambient temperature
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Junction temperature
TEST CONDITION
Rev. 1.9, 15-Oct-14
Document Number: 85726
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BAV19WS, BAV20WS, BAV21WS
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
IF = 100 mA
Forward voltage
IF = 200 mA
TYP.
UNIT
1
V
VF
1.25
V
IR
100
nA
VR = 100 V, TJ = 100 °C
BAV19WS
IR
15
μA
VR = 150 V
BAV20WS
IR
100
nA
VR = 150 V, TJ = 100 °C
BAV20WS
IR
15
μA
VR = 200 V
BAV21WS
IR
100
nA
VR = 200 V, TJ = 100 °C
BAV21WS
IR
15
μA
Dynamic forward resistance

IF = 10 mA
rf
VR = 0, f = 1 MHz
CD
1.5
pF
IF = 30 mA, IR = 30 mA,
iR = 3 mA, RL = 100 
trr
50
ns
Diode capacitance
Reverse recovery time
MIN.
BAV19WS
VR = 100 V
Reverse leakage current
MAX.
VF
5
I F - Forward Current (mA)
1000
Tj = 100 °C
100
10
25 °C
1
0.1
0.01
0
0.2
0.4
0.6
0.8
1
VF - Forward Voltage (V)
18858
0.2
DC current IF
Current (rectif.) I O
0.1
0
18859
60
90
200
150
100
50
0
0
20 40 60 80 100 120 140 160 180 200
Tamb - Ambient Temperature (°C)
120
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
rf - Dynamic Forward Resistance (Ω)
I O , I F - Admissible Forward Current (A)
0.3
30
250
18864
Fig. 1 - Forward Current vs. Forward Voltage
0
Ptot - Admissible Power Dissipation (mW)
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
100
10
1
1
150
Tamb - Ambient Temperature (°C)
Fig. 2 - Admissible Forward Current vs. Ambient Temperature
18861
10
100
IF - Forward Current (mA)
Fig. 4 - Dynamic Forward Resistance vs. Forward Current
Rev. 1.9, 15-Oct-14
Document Number: 85726
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BAV19WS, BAV20WS, BAV21WS
www.vishay.com
Vishay Semiconductors
100
10
1
0.1
0
18862_3
Reverse Voltage
BAV19WS VR = 100 V
BAV20WS VR = 150 V
BAV21WS VR = 200 V
40
80
120
160
Tj - Junction Temperature (°C)
2.0
1.8
CD - Diode Capacitance (pF)
IR(Tj)/IR (25 °C) - Leakage Current
1000
T j = 25 ° C
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.1
200
1
Fig. 5 - Leakage Current vs. Junction Temperature
10
100
VR - Reverse Voltage (V)
18863
Fig. 6 - Capacitance vs. Reverse Voltage
0.1 (0.004) max.
0° to 8
°
0.15 (0.006)
0.10 (0.004)
0.2 (0.008)
0.8 (0.031)
1.15 (0.045)
PACKAGE DIMENSIONS in millimeters (inches): SOD-323
0.40 (0.016)
0.25 (0.010)
1.95 (0.077)
1.60 (0.063)
2.50 (0.098)
1.1 (0.043)
2.85 (0.112)
1.5 (0.059)
0.40 (0.016)
0.20 (0.008)
Cathode bar
Foot print recommendation:
Document no.:S8-V-3910.02-001 (4)
Created - Date: 24.August.2004
Rev. 5 - Date: 23.Sept.2009
17443
1.6 (0.063)
0.6 (0.024)
0.6 (0.024)
0.6 (0.024)
Rev. 1.9, 15-Oct-14
Document Number: 85726
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Revision: 02-Oct-12
1
Document Number: 91000