BAS16WS Datasheet

BAS16WS
www.vishay.com
Vishay Semiconductors
Small Signal Fast Switching Diode
FEATURES
• Silicon epitaxial planar diode
• Fast switching diode
• AEC-Q101 qualified
• Base P/N-E3 - RoHS-compliant, commercial
grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101
qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912 
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MECHANICAL DATA
Case: SOD-323
Weight: approx. 4.3 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
BAS16WS
ORDERING CODE
INTERNAL CONSTRUCTION
TYPE MARKING
REMARKS
Single diode
A6
Tape and reel
SYMBOL
VALUE
UNIT
VR
75
V
VRRM
100
V
IF
250
mA
A
BAS16WS-E3-08 or BAS16WS-E3-18
BAS16WS-HE3-08 or BAS16WS-HE3-18
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse voltage
Repetitive peak reverse voltage
Forward current (continuous)
t = 1 μs
IFSM
2
t = 1 ms
IFSM
1
A
t=1s
IFSM
0.5
A
Ptot
200
mW
SYMBOL
VALUE
UNIT
RthJA
650
K/W
Tj
150
°C
Storage temperature range
Tstg
- 65 to + 150
°C
Operating temperature range
Top
- 55 to + 150
°C
Non-repetitive peak forward current
Power dissipation
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
Junction temperature
Rev. 1.8, 13-May-13
TEST CONDITION
Document Number: 85752
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BAS16WS
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MAX.
UNIT
IF = 1 mA
VF
0.715
V
IF = 10 mA
VF
0.855
V
IF = 50 mA
VF
1
V
Forward voltage
TYP.
IF = 150 mA
VF
1.250
V
VR = 25 V, TJ = 150 °C
IR
30
μA
Leakage current
VR = 75 V
IR
1
μA
VR = 75 V, TJ = 150 °C
IR
50
μA
VR = 0, f = 1 MHz
CD
2
pF
IF = 10 mA, IR = 10 mA,
iR = 1 mA, RL = 100 
trr
6
ns
Diode capacitance
Reverse recovery time
MIN.
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
500
103
400
Tj = 100 °C
102
Ptot (mW)
IF (mA)
Tj = 25 °C
10
1
300
200
100
10- 1
0
10- 2
0
1
2
18185
0
100
200
Tamb (°C)
VF (V)
18105
Fig. 1 - Forward Characteristics
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
104
Tj = 25 °C
5
2
10
Tj = 25 °C
1.1
f = 1 MHz
f = 1 kHz
3
1.0
CD (VR)
2
102
5
CD (0 V)
Rf (Ω)
5
0.9
0.8
2
10
5
0.7
2
10-2
17438
10-1
1
10
IF (mA)
Fig. 2 - Dynamic Forward Resistance vs. Forward Current
Rev. 1.8, 13-May-13
0
102
17440
2
4
6
8
10
VR (V)
Fig. 4 - Relative Capacitance vs. Reverse Voltage
Document Number: 85752
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BAS16WS
www.vishay.com
Vishay Semiconductors
104
5
2
103
IR (nA)
5
2
102
5
2
10
5
VR = 20 V
2
1
0
100
17441
200
Tj (°C)
Fig. 5 - Leakage Current vs. Junction Temperature
0.1 (0.004) max.
0° to 8
°
0.15 (0.006)
0.10 (0.004)
0.2 (0.008)
0.8 (0.031)
1.15 (0.045)
PACKAGE DIMENSIONS in millimeters (inches): SOD-323
0.40 (0.016)
0.25 (0.010)
1.95 (0.077)
1.60 (0.063)
2.50 (0.098)
1.1 (0.043)
2.85 (0.112)
1.5 (0.059)
0.40 (0.016)
0.20 (0.008)
Cathode bar
Foot print recommendation:
Document no.:S8-V-3910.02-001 (4)
Created - Date: 24.August.2004
Rev. 5 - Date: 23.Sept.2009
17443
Rev. 1.8, 13-May-13
1.6 (0.063)
0.6 (0.024)
0.6 (0.024)
0.6 (0.024)
Document Number: 85752
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000
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