Duaal N-Chann nel Enhanccement Mod de MOSFE ET Feaatures z Surface-mounted packaage l thresholld voltage z Extremely low z Advanced trrench cell deesign z ESD protectted (HBM>22KV) App plications z Portable apppliances z Battery mannagement Quiick reference z BV ≧ 20 V Ptot ≦ 1.25 W ID ≦ 6.8 A z RDS(ON) ≦ 18 mΩ @ VGS = 4.5 V / RDS(ON) ≦ 27 mΩ @ VGS = 2.5 V Pin Descriptioon Pin Descriptionn S Simplified O Outline 1 2,3 4 5 6,7 8 TS SSOP8 Sym mbol Drain(D) Source(S11) Gate(G1) Gate(G2) Source(S22) Drain(D) Lim miting Valu ues Notes： * Surfacee Mounted on 1 in2 pad area, t ≤ 10 sec * Pulse width ≤ 300 μs, duty cycle ** c ≤2% 1 of 6 Elecctrical Chaaracteristiccs (TA = 25 °C Unless Otherwise Noted) N Notes： a : Pulsee test ; pulse wiidth ≤ 300 μs, duty d cycle ≤ 2% % b : Guaranteeed by design, not subject to prroduction testin ng 2 of 6 Typicaal Characteeristics 3 of 6 4 of 6 5 of 6 Package Diimension ns TSSO OP- 8 6 of 6