BZT55-Series Datasheet

BZT55-Series
www.vishay.com
Vishay Semiconductors
Small Signal Zener Diodes
FEATURES
• Very sharp reverse characteristic
• Low reverse current level
• Very high stability
• Low noise
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
• Voltage stabilization
PRIMARY CHARACTERISTICS
PARAMETER
VALUE
UNIT
VZ range nom.
2.4 to 75
V
Test current IZT
2.5 to 5
mA
VZ specification
Pulse current
Int. construction
Single
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
TAPED UNITS PER REEL
MINIMUM ORDER QUANTITY
BZT55-series
BZT55-series-GS18
10 000 per 13" reel
10 000/box
BZT55-series
BZT55-series-GS08
2500 per 7" reel
12 500/box
PACKAGE
PACKAGE NAME
QuadroMELF SOD-80
WEIGHT
34 mg
MOLDING COMPOUND MOISTURE SENSITIVITY
FLAMMABILITY RATING
LEVEL
UL 94 V-0
MSL level 1
(according J-STD-020)
SOLDERING
CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Power dissipation
TEST CONDITION
SYMBOL
VALUE
UNIT
RthJA  300 K/W
Ptot
500
mW
IZ
PV/VZ
mA
RthJA
500
K/W
Tj
175
°C
Tstg
- 65 to + 175
°C
VF
1.5
V
Zener current
Junction to ambient air
On PC board
50 mm x 50 mm x 1.6 mm
Junction temperature
Storage temperature range
Forward voltage (max.)
Rev. 1.7, 22-Nov-11
IF = 200 mA
Document Number: 85637
1
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BZT55-Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE (1)
VZ at IZT1
PART NUMBER
TEST
CURRENT
IZT1
V
IZT2
REVERSE LEAKAGE
CURRENT
DYNAMIC
RESISTANCE
IR at VR
ZZ at IZT1 ZZK at IZT2
Tamb =
150 °C
f = 1 kHz
Tamb =
25 °C
mA
μA
TEMPERATURE
COEFFICIENT
TKVZ

V
%/K
MIN.
NOM.
MAX.
MAX.
MAX.
MIN.
BZT55C2V4
2.28
2.4
2.56
5
1
< 50
MAX.
BZT55C2V7
2.5
2.7
2.9
5
1
BZT55C3V0
2.8
3.0
3.2
5
1
BZT55C3V3
3.1
3.3
3.5
5
BZT55C3V6
3.4
3.6
3.8
5
BZT55C3V9
3.7
3.9
4.1
5
1
<2
< 40
1
< 90
< 600
- 0.08
- 0.05
BZT55C4V3
4
4.3
4.6
5
1
<1
< 20
1
< 90
< 600
- 0.06
- 0.03
BZT55C4V7
4.4
4.7
5
5
1
< 0.5
< 10
1
< 80
< 600
- 0.05
0.02
BZT55C5V1
4.8
5.1
5.4
5
1
< 0.1
<2
1
< 60
< 550
- 0.02
0.02
BZT55C5V6
5.2
5.6
6
5
1
< 0.1
<2
1
< 40
< 450
- 0.05
0.05
BZT55C6V2
5.8
6.2
6.6
5
1
< 0.1
<2
2
< 10
< 200
0.03
0.06
BZT55C6V8
6.4
6.8
7.2
5
1
< 0.1
<2
3
<8
< 150
0.03
0.07
BZT55C7V5
7
7.5
7.9
5
1
< 0.1
<2
5
<7
< 50
0.03
0.07
BZT55C8V2
7.7
8.2
8.7
5
1
< 0.1
<2
6.2
<7
< 50
0.03
0.08
BZT55C9V1
8.5
9.1
9.6
5
1
< 0.1
<2
6.8
< 10
< 50
0.03
0.09
BZT55C10
9.4
10
10.6
5
1
< 0.1
<2
7.5
< 15
< 70
0.03
0.1
BZT55C11
10.4
11
11.6
5
1
< 0.1
<2
8.2
< 20
< 70
0.03
0.11
< 100
1
< 85
< 600
- 0.09
- 0.06
< 10
< 50
1
< 85
< 600
- 0.09
- 0.06
<4
< 40
1
< 90
< 600
- 0.08
- 0.05
1
<2
< 40
1
< 90
< 600
- 0.08
- 0.05
1
<2
< 40
1
< 90
< 600
- 0.08
- 0.05
BZT55C12
11.4
12
12.7
5
1
< 0.1
<2
9.1
< 20
< 90
0.03
0.11
BZT55C13
12.4
13
14.1
5
1
< 0.1
<2
10
< 26
< 110
0.03
0.11
BZT55C15
13.8
15
15.6
5
1
< 0.1
<2
11
< 30
< 110
0.03
0.11
BZT55C16
15.3
16
17.1
5
1
< 0.1
<2
12
< 40
< 170
0.03
0.11
BZT55C18
16.8
18
19.1
5
1
< 0.1
<2
13
< 50
< 170
0.03
0.11
BZT55C20
18.8
20
21.2
5
1
< 0.1
<2
15
< 55
< 220
0.03
0.11
BZT55C22
20.8
22
23.3
5
1
< 0.1
<2
16
< 55
< 220
0.04
0.12
BZT55C24
22.8
24
25.6
5
1
< 0.1
<2
18
< 80
< 220
0.04
0.12
BZT55C27
25.1
27
28.9
5
1
< 0.1
<2
20
< 80
< 220
0.04
0.12
BZT55C30
28
30
32
5
1
< 0.1
<2
22
< 80
< 220
0.04
0.12
BZT55C33
31
33
35
5
1
< 0.1
<2
24
< 80
< 220
0.04
0.12
BZT55C36
34
36
38
5
1
< 0.1
<2
27
< 80
< 220
0.04
0.12
BZT55C39
37
39
41
2.5
0.5
< 0.1
<5
30
< 90
< 500
0.04
0.12
BZT55C43
40
43
46
2.5
0.5
< 0.1
<5
33
< 90
< 600
0.04
0.12
BZT55C47
44
47
50
2.5
0.5
< 0.1
<5
36
< 110
< 700
0.04
0.12
BZT55C51
48
51
54
2.5
0.5
< 0.1
< 10
39
< 125
< 700
0.04
0.12
BZT55C56
52
56
60
2.5
0.5
< 0.1
< 10
43
< 135
< 1000
0.04
0.12
BZT55C62
58
62
66
2.5
0.5
< 0.1
< 10
47
< 150
< 1000
0.04
0.12
BZT55C68
64
68
72
2.5
0.5
< 0.1
< 10
51
< 200
< 1000
0.04
0.12
BZT55C75
70
75
79
2.5
0.5
< 0.1
< 10
56
< 250
< 1500
0.04
0.12
Notes
• Additional measurement of voltage group 9V1 to 75 at 95 % Vzmin.  35 nA at Tj 25 °C
(1) t  10 ms, T/t > 1000
p
p
Rev. 1.7, 22-Nov-11
Document Number: 85637
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZT55-Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE (1)
TEST
CURRENT
REVERSE LEAKAGE
CURRENT
IR at VR
VZ at IZT1
PART NUMBER
IZT1
V
IZT2
Tamb =
25 °C
mA
ZZ at IZT1
Tamb =
150 °C
μA
DYNAMIC
RESISTANCE
NOM.
MAX.
BZT55B2V4
2.35
2.4
2.45
5
1
< 50
< 100
BZT55B2V7
2.64
2.7
2.76
5
1
< 10
BZT55B3V0
2.94
3.0
3.06
5
1
<4
BZT55B3V3
3.24
3.3
3.36
5
1
BZT55B3V6
3.52
3.6
3.68
5
BZT55B3V9
3.82
3.9
3.98
BZT55B4V3
4.22
4.3
4.38
BZT55B4V7
4.6
4.7
BZT55B5V1
5
BZT55B5V6
ZZK at IZT2
TKVZ
f = 1 kHz

V
MIN.
TEMPERATURE
COEFFICIENT
%/K
MAX.
MAX.
MIN.
MAX.
1
< 85
< 600
- 0.09
- 0.06
< 50
1
< 85
< 600
- 0.09
- 0.06
< 40
1
< 90
< 600
- 0.08
- 0.05
<2
< 40
1
< 90
< 600
- 0.08
- 0.05
1
<2
< 40
1
< 90
< 600
- 0.08
- 0.05
5
1
<2
< 40
1
< 90
< 600
- 0.08
- 0.05
5
1
<1
< 20
1
< 90
< 600
- 0.06
- 0.03
4.8
5
1
< 0.5
< 10
1
< 80
< 600
- 0.05
0.02
5.1
5.2
5
1
< 0.1
<2
1
< 60
< 550
- 0.02
0.02
5.48
5.6
5.72
5
1
< 0.1
<2
1
< 40
< 450
- 0.05
0.05
BZT55B6V2
6.08
6.2
6.32
5
1
< 0.1
<2
2
< 10
< 200
0.03
0.06
BZT55B6V8
6.66
6.8
6.94
5
1
< 0.1
<2
3
<8
< 150
0.03
0.07
BZT55B7V5
7.35
7.5
7.65
5
1
< 0.1
<2
5
<7
< 50
0.03
0.07
BZT55B8V2
8.04
8.2
8.36
5
1
< 0.1
<2
6.2
<7
< 50
0.03
0.08
BZT55B9V1
8.92
9.1
9.28
5
1
< 0.1
<2
6.8
< 10
< 50
0.03
0.09
BZT55B10
9.8
10
10.2
5
1
< 0.1
<2
7.5
< 15
< 70
0.03
0.1
BZT55B11
10.78
11
11.22
5
1
< 0.1
<2
8.2
< 20
< 70
0.03
0.11
BZT55B12
11.76
12
12.24
5
1
< 0.1
<2
9.1
< 20
< 90
0.03
0.11
BZT55B13
12.74
13
13.26
5
1
< 0.1
<2
10
< 26
< 110
0.03
0.11
BZT55B15
14.7
15
15.3
5
1
< 0.1
<2
11
< 30
< 110
0.03
0.11
BZT55B16
15.7
16
16.3
5
1
< 0.1
<2
12
< 40
< 170
0.03
0.11
BZT55B18
17.64
18
18.36
5
1
< 0.1
<2
13
< 50
< 170
0.03
0.11
BZT55B20
19.6
20
20.4
5
1
< 0.1
<2
15
< 55
< 220
0.03
0.11
BZT55B22
21.55
22
22.45
5
1
< 0.1
<2
16
< 55
< 220
0.04
0.12
BZT55B24
23.5
24
24.5
5
1
< 0.1
<2
18
< 80
< 220
0.04
0.12
BZT55B27
26.4
27
27.6
5
1
< 0.1
<2
20
< 80
< 220
0.04
0.12
BZT55B30
29.4
30
30.6
5
1
< 0.1
<2
22
< 80
< 220
0.04
0.12
BZT55B33
32.4
33
33.6
5
1
< 0.1
<2
24
< 80
< 220
0.04
0.12
BZT55B36
35.3
36
36.7
5
1
< 0.1
<2
27
< 80
< 220
0.04
0.12
BZT55B39
38.2
39
39.8
2.5
1
< 0.1
<5
30
< 90
< 500
0.04
0.12
BZT55B43
42.1
43
43.9
2.5
0.5
< 0.1
<5
33
< 90
< 600
0.04
0.12
BZT55B47
46.1
47
47.9
2.5
0.5
< 0.1
<5
36
< 110
< 700
0.04
0.12
BZT55B51
50
51
52
2.5
0.5
< 0.1
< 10
39
< 125
< 700
0.04
0.12
BZT55B56
54.9
56
57.1
2.5
0.5
< 0.1
< 10
43
< 135
< 1000
0.04
0.12
BZT55B62
60.8
62
63.2
2.5
0.5
< 0.1
< 10
47
< 150
< 1000
0.04
0.12
BZT55B68
66.6
68
69.4
2.5
0.5
< 0.1
< 10
51
< 200
< 1000
0.04
0.12
BZT55B75
73.5
75
76.5
2.5
0.5
< 0.1
< 10
56
< 250
< 1500
0.04
0.12
Notes
• Additional measurement of voltage group 9V1 to 75 at 95 % Vzmin.  35 nA at Tj 25 °C
(1) t  10 ms, T/t > 1000
p
p
Rev. 1.7, 22-Nov-11
Document Number: 85637
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZT55-Series
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
15
TKVZ - Temperature Coefficient
of VZ (10-4/K)
Ptot - Total Power Dissipation (mW)
600
500
400
300
200
100
0
95 9602
Fig. 1 - Total Power Dissipation vs. Ambient Temperature
IZ = 5 mA
0
0
10
20
30
40
50
VZ - Z-Voltage (V)
95 9600
Fig. 4 - Temperature Coefficient of VZ vs. Z-Voltage
1000
200
CD - Diode Capacitance (pF)
VZ - Voltage Change (mV)
5
-5
80
120
160 200
40
Tamb - Ambient Temperature (°C)
0
Tj = 25 °C
100
IZ = 5 mA
10
150
VR = 2 V
Tj = 25 °C
100
50
0
1
0
5
10
15
25
20
VZ - Z-Voltage (V)
95 9598
0
5
10
15
20
25
VZ - Z-Voltage (V)
95 9601
Fig. 2 - Typical Change of Working Voltage under Operating
Conditions at Tamb=25°C
Fig. 5 - Diode Capacitance vs. Z-Voltage
1.3
100
VZtn = VZt/VZ (25 °C)
1.2
TKVZ = 10 x 10-4/K
8 x 10-4/K
6 x 10-4/K
1.1
-4
4 x 10 /K
2 x 10-4/K
0
1.0
- 2 x 10-4/K
- 4 x 10-4/K
0.9
IF - Forward Current (mA)
VZtn - Relative Voltage Change
10
10
Tj = 25 °C
1
0.1
0.01
0.001
0.8
- 60
95 9599
0
60
120
180
Tj - Junction Temperature (°C)
Fig. 3 - Typical Change of Working Voltage vs. Junction
Temperature
Rev. 1.7, 22-Nov-11
0
240
95 9605
0.2
0.4
0.6
0.8
1.0
VF - Forward Voltage (V)
Fig. 6 - Forward Current vs. Forward Voltage
Document Number: 85637
4
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZT55-Series
www.vishay.com
Vishay Semiconductors
1000
rZ - Differential Z-Resistance (Ω)
100
IZ - Z-Current (mA)
80
Ptot = 500 mW
Tamb = 25 °C
60
40
20
IZ = 1 mA
100
5 mA
10 10 mA
Tj = 25 °C
1
0
0
4
6
12
8
20
0
VZ - Z-Voltage (V)
95 9604
Fig. 7 - Z-Current vs. Z-Voltage
5
10
15
20
25
VZ - Z-Voltage (V)
95 9606
Fig. 9 - Differential Z-Resistance vs. Z-Voltage
50
Ptot = 500 mW
Tamb = 25 °C
IZ - Z-Current (mA)
40
30
20
10
0
15
20
25
30
35
VZ - Z-Voltage (V)
95 9607
Zthp - Thermal Resistance for Pulse Cond. (KW)
Fig. 8 - Z-Current vs. Z-Voltage
1000
tp/T = 0.5
100
tp/T = 0.2
Single Pulse
RthJA = 300 K/W
T = Tjmax - Tamb
10
tp/T = 0.01
tp/T = 0.1
tp/T = 0.02
tp/T = 0.05
1
10-1
iZM = (- VZ + (VZ2 + 4rzj x T/Zthp) 1/2)/(2rzj)
100
101
tp - Pulse Length (ms)
102
95 9603
Fig. 10 - Thermal Response
Rev. 1.7, 22-Nov-11
Document Number: 85637
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZT55-Series
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Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters (inches): QuadroMELF SOD-80
1.6 (0.063)
1.4 (0.055)
1.
7
(0
.0
gl
as 67)
s
Cathode identification
> R3 (R0.118)
glass
0.47 (0.019) max.
3.7 (0.146)
3.3 (0.130)
The gap between plug and glass can
be either on cathode or anode side
Foot print recommendation:
2.5 (0.098) max.
2 (0.079) min.
1.25 (0.049) min.
5 (0.197) ref.
96 12071
Rev. 1.7, 22-Nov-11
Document Number: 85637
6
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000
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