10 FZ06BIA083FI P896E D6 14

10-FZ06BIA083FI-P896E
datasheet
flowSOL 0 BI
600 V / 30 A
Features
flow0 housing
● High efficiency
● Ultra fast switching frequency
● Low inductive design
● SiC in boost
Target Applications
Schematic
● Solar inverters with transformer
Types
● 10-FZ06BIA083FI-P896E
Maximum Ratings
T j=25°C, unless otherwise specified
Parameter
Condition
Symbol
Value
Unit
600
V
Th=80°C
Tc=80°C
36
49
A
Tj=25°C
370
A
Tj=150°C
360
A 2s
Th=80°C
Tc=80°C
42
63
W
Bypass FWD
Repetitive peak reverse voltage
V RRM
Forward current per FWD
I FAV
Surge forward current
I FSM
DC current
tp=10ms
I2t-value
2
I t
Power dissipation per FWD
P tot
Maximum Junction Temperature
T jmax
150
°C
Drain to source breakdown voltage
V DS
600
V
DC drain current
ID
30
37
A
230
A
92
139
W
Tj=Tjmax
Input Boost MOSFET
Pulsed drain current
I Dpulse
Tj=Tjmax
Th=80°C
Tc=80°C
tp limited by Tjmax
Tj=Tjmax
Th=80°C
Tc=80°C
Power dissipation
P tot
Gate-source peak voltage
V GS
±20
V
T jmax
150
°C
Maximum Junction Temperature
copyright Vincotech
1
07 Apr. 2015 / Revision 6
10-FZ06BIA083FI-P896E
datasheet
Maximum Ratings
T j=25°C, unless otherwise specified
Parameter
Condition
Symbol
Value
Unit
600
V
20
25
A
70
A
41
62
W
Input Boost FWD
Peak Repetitive Reverse Voltage
DC forward current
V RRM
Tj=25°C
IF
Tj=Tjmax
Th=80°C
Tc=80°C
Repetitive peak forward current
I FRM
tp limited by Tjmax
Power dissipation
P tot
Tj=Tjmax
Maximum Junction Temperature
T jmax
175
°C
Drain to source breakdown voltage
V DS
600
V
DC drain current
ID
Th=80°C
Tc=80°C
Boost and Buck MOSFET
Pulsed drain current
I Dpulse
Tj=Tjmax
Th=80°C
Tc=80°C
17
tp limited by Tjmax
Tc=25°C
85
A
Tj=Tjmax
Th=80°C
Tc=80°C
74
111
W
20
A
Power dissipation
P tot
Gate-source peak voltage
V GS
±20
V
T jmax
150
°C
Storage temperature
T stg
-40…+125
°C
Operation temperature under switching condition
T op
-40…+(Tjmax - 25)
°C
4000
V
min 12,7
mm
8,96
mm
Maximum Junction Temperature
Thermal Properties
Insulation Properties
Insulation voltage
V is
t=2s
DC voltage
Creepage distance
Clearance
copyright Vincotech
2
07 Apr. 2015 / Revision 6
10-FZ06BIA083FI-P896E
datasheet
Characteristic Values
Parameter
Conditions
Symbol
Value
V r [V] or I C [A] or
V GE [V] or
V CE [V] or I F [A] or
V GS [V]
V DS [V]
I D [A]
Unit
Tj
Min
Typ
Max
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
0,7
1,01
0,93
0,86
0,75
1,3
Bypass FWD
Forward voltage
VF
Threshold voltage (for power loss calc. only)
V to
Slope resistance (for power loss calc. only)
rt
Reverse current
Ir
Thermal resistance chip to heatsink
R th(j-s)
15
1200
V
Ω
0,012
0,05
Thermal grease
thickness≤50um
λ = 1 W/mK
V
1,68
mA
K/W
Input Boost MOSFET
Static drain to source ON resistance
Gate threshold voltage
r DS(on)
V (GS)th
Gate to Source Leakage Current
I GSS
Zero Gate Voltage Drain Current
I DSS
Turn On Delay Time
t d(on)
Rise Time
Turn off delay time
Fall time
44
VGS=VDS
0,003
20
0
600
0
tr
t d(off)
tf
Turn-on energy loss
E on
Turn-off energy loss
E off
Total gate charge
QG
Gate to source charge
Q GS
Gate to drain charge
Q GD
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
C rss
Thermal resistance chip to heatsink
10
R th(j-s)
Rgoff=4 Ω
Rgon=4 Ω
Rgon=4 Ω
10
400
10
400
15
44
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
2,1
0,04
0,09
3
Ω
3,9
200
25
28
27
5
6
154
167
10
9
0,063
0,072
0,025
0,025
V
nA
µA
ns
mWs
150
34
nC
51
6800
f=1MHz
100
0
Tj=25°C
pF
320
48
Thermal grease
thickness≤50um
λ = 1 W/mK
0,76
K/W
Input Boost FWD
Forward voltage
VF
Reverse leakage current
I rm
Peak recovery current
I RRM
Reverse recovery time
t rr
Reverse recovery charge
Q rr
Reverse recovered energy
E rec
Peak rate of fall of recovery current
( di rf/dt )max
Thermal resistance chip to heatsink
R th(j-s)
copyright Vincotech
16
10
Rgon=4 Ω
400
10
400
Thermal grease
thickness≤50um
λ = 1 W/mK
15
15
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1
1,54
1,71
400
17
15
9
10
0,058
0,064
0,005
0,006
4244
2752
2,34
3
1,8
V
µA
A
ns
µC
mWs
A/µs
K/W
07 Apr. 2015 / Revision 6
10-FZ06BIA083FI-P896E
datasheet
Characteristic Values
Parameter
Conditions
Symbol
Value
V r [V] or I C [A] or
V GE [V] or
V CE [V] or I F [A] or
V GS [V]
V DS [V]
I D [A]
Tj
Unit
Min
Typ
Max
3
118
233
4
5
Boost and Buck MOSFET
Static drain to source ON resistance
Gate threshold voltage
r DS(on)
10
V GS(th)
21,6
VDS=VGS
0,0019
Gate to Source Leakage Current
I GSS
20
0
Zero Gate Voltage Drain Current
I DSS
0
600
Turn On Delay Time
Rise Time
Turn off delay time
Fall time
t d(on)
tr
t d(off)
tf
Turn-on energy loss
E on
Turn-off energy loss
E off
Total gate charge
QG
Gate to source charge
Q GS
Gate to drain charge
Q GD
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
C rss
Thermal resistance chip to heatsink
R th(j-s)
Rgon=16 Ω
Rgoff=4 Ω
10
400
15
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
mΩ
200
25
58
55
22
23
126
134
6
8
1,54
2,27
0,01
0,02
V
nA
µA
ns
mWs
163
10
480
46
Tj=25°C
36
nC
87
5060
f=1MHz
0
25
Tj=25°C
1400
pF
16
Thermal grease
thickness≤50um
λ = 1 W/mK
0,95
K/W
Thermistor
Rated resistance
R
Tj=25°C
4,7
kΩ
Power dissipation
P
Tj=25°C
210
mW
Tj=25°C
3,5
mW/K
Power dissipation constant
B-value
B(25/50)
Tj=25°C
3590
K
B-value
B(25/100)
Tj=25°C
3650
K
Vincotech NTC Reference
copyright Vincotech
D
4
07 Apr. 2015 / Revision 6
10-FZ06BIA083FI-P896E
datasheet
Boost and Buck
Figure 1
Typical output characteristics
I C = f(V CE)
MOSFET
Figure 2
Typical output characteristics
I C = f(V CE)
40
IC (A)
IC (A)
40
MOSFET
32
32
24
24
16
16
8
8
0
0
0
1
At
tp =
Tj =
V GE from
2
3
4
V CE (V)
5
0
At
tp =
Tj =
V GE from
250
µs
25
°C
6 V to 16 V in steps of 1 V
Figure 3
Typical transfer characteristics
I C = f(V GE)
1
2
3
4
V CE (V)
5
250
µs
125
°C
6 V to 16 V in steps of 1 V
MOSFET
IC (A)
30
Tj = Tjmax-25°C
25
20
15
10
5
Tj = 25°C
0
0
At
tp =
V CE =
1
2
250
10
copyright Vincotech
3
4
5
6
7 V GE (V) 8
µs
V
5
07 Apr. 2015 / Revision 6
10-FZ06BIA083FI-P896E
datasheet
Boost and Buck
MOSFET
Figure 5
Typical switching energy losses
as a function of gate resistor
E = f(R G)
MOSFET
3,00
0,10
E (mWs)
E (mWs)
Figure 4
Typical switching energy losses
as a function of collector current
E = f(I C)
Eon High T
2,50
0,08
Eoff High T
2,00
Eon Low T
0,06
1,50
0,04
1,00
Eoff Low T
0,02
0,50
0,00
0,00
0
5
10
15
20
25
I C (A)
0
30
With an inductive load at
Tj =
°C
25/125
V CE =
400
V
V GE =
10
V
R gon =
16
Ω
R goff =
4
Ω
15
30
45
60
R G (W)
75
With an inductive load at
Tj =
°C
25/125
V CE =
400
V
V GE =
10
V
IC =
15
A
Figure 6
Typical reverse recovery energy loss
as a function of collector current
E rec = f(I c)
FWD
Figure 7
Typical reverse recovery energy loss
as a function of gate resistor
E rec = f(R G)
0,300
FWD
E (mWs)
E (mWs)
0,300
0,250
0,250
0,200
0,200
Erec High T
0,150
Erec High T
0,150
0,100
0,100
Erec Low T
0,050
0,050
0,000
0,000
Erec Low T
0
5
10
15
20
25
I C (A)
30
0
With an inductive load at
Tj =
25/125
°C
V CE =
400
V
V GE =
10
V
R gon =
16
Ω
copyright Vincotech
15
30
45
60
R G (W)
75
With an inductive load at
Tj =
25/125
°C
V CE =
400
V
V GE =
10
V
IC =
15
A
6
07 Apr. 2015 / Revision 6
10-FZ06BIA083FI-P896E
datasheet
Boost and Buck
Figure 9
Typical switching times as a
function of gate resistor
t = f(R G)
1,00
1,00
t (ms)
MOSFET
t (ms)
Figure 8
Typical switching times as a
function of collector current
t = f(I C)
MOSFET
tdoff
tdoff
tdon
0,10
0,10
tr
tdon
tf
tf
0,01
0,01
tr
0,00
0,00
0
5
10
15
20
25
I C (A)
30
0
With an inductive load at
Tj =
125
°C
V CE =
400
V
V GE =
10
V
R gon =
16
Ω
R goff =
4
Ω
15
30
45
60
R G (W)
75
With an inductive load at
Tj =
125
°C
V CE =
400
V
V GE =
10
V
IC =
15
A
Figure 10
Typical reverse recovery time as a
function of collector current
t rr = f(I c)
FWD
Figure 11
Typical reverse recovery time as a
function of IGBT turn on gate resistor
t rr = f(R gon)
0,250
t rr(ms)
t rr(ms)
0,250
FWD
0,200
trr High T
0,200
0,150
0,150
trr High T
0,100
trr Low T
0,100
trr Low T
0,050
0,050
0,000
0,000
0
At
Tj =
V CE =
V GE =
R gon =
5
25/125
400
10
16
copyright Vincotech
10
15
20
25
I C (A)
30
0
At
Tj =
VR=
IF=
V GE =
°C
V
V
Ω
7
15
25/125
400
15
10
30
45
60
R gon (W)
75
°C
V
A
V
07 Apr. 2015 / Revision 6
10-FZ06BIA083FI-P896E
datasheet
Boost and Buck
Figure 12
Typical reverse recovery charge as a
function of collector current
Q rr = f(I C)
FWD
Figure 13
Typical reverse recovery charge as a
function of MOSFET turn on gate resistor
Q rr = f(R gon)
Qrr (mC)
Qrr (mC)
6,00
Qrr High T
FWD
6
5,00
5
4,00
4
Qrr High T
Qrr Low T
3,00
3
2,00
2
1,00
1
0,00
0
At
At
Tj =
V CE =
V GE =
R gon =
Qrr Low T
0
5
25/125
400
10
16
10
15
20
25
I C (A)
30
0
At
Tj =
VR=
IF=
V GE =
°C
V
V
Ω
Figure 14
Typical reverse recovery current as a
function of collector current
I RRM = f(I C)
FWD
15
25/125
400
15
10
30
45
60
R g on ( Ω)
°C
V
A
V
Figure 15
Typical reverse recovery current as a
function of MOSFET turn on gate resistor
I RRM = f(R gon)
90
75
FWD
IrrM (A)
IrrM (A)
120
75
100
IRRM High T
60
80
IRRM Low T
45
60
30
40
IRRM High T
15
20
IRRM Low T
0
0
0
At
Tj =
V CE =
V GE =
R gon =
5
25/125
400
10
16
copyright Vincotech
10
15
20
25
I C (A)
30
0
At
Tj =
VR=
IF=
V GE =
°C
V
V
Ω
8
15
25/125
400
15
10
30
45
60
R gon (W)
75
°C
V
A
V
07 Apr. 2015 / Revision 6
10-FZ06BIA083FI-P896E
datasheet
Boost and Buck
Figure 16
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI 0/dt ,dI rec/dt = f(I c)
FWD
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of MOSFET turn on gate resistor
dI 0/dt ,dI rec/dt = f(R gon)
40000
direc / dt (A/ms)
direc / dt (A/ms)
16000
FWD
dIrec/dtHigh T
14000
dIrec/dtHigh T
35000
12000
30000
dIrec/dtLow T
10000
25000
8000
20000
6000
15000
4000
10000
2000
5000
di0/dtHigh T
dIo/dtLow T
dIrec/dtLow T
dI0/dtLow T
dI0/dtHigh T
0
0
0
At
Tj =
V CE =
V GE =
R gon =
5
25/125
400
10
16
10
15
20
25
I C (A)
0
30
At
Tj =
VR=
IF=
V GE =
°C
V
V
Ω
Figure 18
MOSFET transient thermal impedance
as a function of pulse width
Z thJH = f(t p)
15
25/125
400
15
10
30
45
60
R gon (W)
75
°C
V
A
V
MOSFET
ZthJH (K/W)
100
10-1
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-5
At
D =
R thJH =
10-4
10-3
10-2
10-1
100
t p (s)
10110
tp/T
0,95
K/W
IGBT thermal model values
R (K/W)
0,03
0,15
0,55
0,14
0,04
0,03
Tau (s)
6,6E+00
9,3E-01
1,6E-01
2,5E-02
2,6E-03
3,4E-04
copyright Vincotech
9
07 Apr. 2015 / Revision 6
10-FZ06BIA083FI-P896E
datasheet
Boost and Buck
Figure 19
Power dissipation as a
function of heatsink temperature
P tot = f(T h)
MOSFET
Figure 20
Collector current as a
function of heatsink temperature
I C = f(T h)
30
Ptot (W)
IC (A)
200
MOSFET
25
160
20
120
15
80
10
40
5
0
0
0
At
Tj =
50
150
100
150
T h ( o C)
200
0
50
At
Tj =
V GE =
°C
Figure 21
Safe operating area as a function
of collector-emitter voltage
I C = f(V CE)
MOSFET
150
T h ( o C)
200
°C
V
Figure 22
Gate voltage vs Gate charge
MOSFET
V GE = f(Q g)
IC (A)
VGE (V)
103
1
102
10mS
10
120V
9
8
100uS
100mS
150
15
100
480V
7
1mS
6
101
5
DC
4
100
3
2
10-1
1
0
0
100
At
D =
Th =
V GE =
Tj =
101
102
V CE (V)
40
60
80
100
120
140
160
Q g (nC)
At
ID =
single pulse
80
ºC
15
V
T jmax
ºC
copyright Vincotech
20
103
10
47
A
07 Apr. 2015 / Revision 6
10-FZ06BIA083FI-P896E
datasheet
Boost and Buck
Figure 1
Typical output characteristics
I C = f(V CE)
IGBT
Figure 2
Typical output characteristics
I C = f(V CE)
40
IC (A)
IC (A)
40
IGBT
32
32
24
24
16
16
8
8
0
0
0
At
tp =
Tj =
V GE from
1
2
3
V CE (V)
4
5
0
At
tp =
Tj =
V GE from
250
µs
25
°C
6 V to 16 V in steps of 1 V
Figure 3
Typical transfer characteristics
I C = f(V GE)
IGBT
1
2
3
V CE (V)
4
5
250
µs
125
°C
5 V to 15 V in steps of 1 V
Figure 4
IGBT transient thermal impedance
as a function of pulse width
Z thJH = f(t p)
IGBT
100
Tj = Tjmax-25°C
Tj = 25°C
ZthJH (K/W)
IC (A)
30
25
20
10-1
15
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10
5
0
10-2
0
2
4
At
tp =
V CE =
250
10
µs
V
copyright Vincotech
6
8
10
V GE (V)
12
10-5
At
D =
R thJH =
11
10-4
10-3
10-2
10-1
100
t p (s)
101 10
tp/T
0,95
K/W
07 Apr. 2015 / Revision 6
10-FZ06BIA083FI-P896E
datasheet
Input Boost
Figure 1
Typical output characteristics
I D = f(V DS)
BOOST MOSFET
Figure 2
Typical output characteristics
I D = f(V DS)
IC (A)
100
IC(A)
100
80
80
60
60
40
40
20
20
0
BOOST FWD
0
0
At
tp =
Tj =
V GS from
1
2
3
V CE (V)
4
5
0
At
tp =
Tj =
V GS from
250
µs
25
°C
4 V to 14 V in steps of 1 V
Figure 2
Typical transfer characteristics
I D = f(V DS)
BOOST MOSFET
1
2
3
4
V CE (V)
5
250
µs
126
°C
4 V to 14 V in steps of 1 V
Figure 3
Typical FWD forward current as
a function of forward voltage
I F = f(V F)
BOOST FWD
50
IF (A)
ID (A)
50
Tj = 25°C
40
40
30
30
Tj = Tjmax-25°C
Tj = Tjmax-25°C
20
20
Tj = 25°C
10
10
0
0
0
At
tp =
V DS =
1
250
10
copyright Vincotech
2
3
4
5
V GS (V)
0
6
At
tp =
µs
V
12
0,8
250
1,6
2,4
3,2
V F (V)
4
µs
07 Apr. 2015 / Revision 6
10-FZ06BIA083FI-P896E
datasheet
Input Boost
Figure 4
Typical switching energy losses
as a function of collector current
E = f(I D)
BOOST MOSFET
Figure 5
Typical switching energy losses
as a function of gate resistor
E = f(R G)
0,2
BOOST MOSFET
E (mWs)
E (mWs)
0,2
0,16
Eon High T
0,16
Eon Low T
Eon High T
0,12
0,12
Eon Low T
Eoff High T
0,08
0,08
Eoff Low T
Eoff High T
0,04
0,04
Eoff Low T
0
0
0
5
10
15
20
25
I C (A)
30
0
With an inductive load at
Tj =
25/125
°C
V DS =
400
V
V GS =
10
V
R gon =
4
Ω
R goff =
4
Ω
4
8
12
16
RG (Ω )
20
With an inductive load at
Tj =
25/125
°C
V DS =
400
V
V GS =
10
V
ID =
15
A
Figure 6
Typical reverse recovery energy loss
as a function of collector (drain) current
E rec = f(I c)
BOOST MOSFET
Figure 7
Typical reverse recovery energy loss
as a function of gate resistor
E rec = f(R G)
0,018
E (mWs)
E (mWs)
0,025
BOOST MOSFET
0,015
0,02
Erec High T
0,012
Erec Low T
0,015
0,009
0,01
0,006
Erec High T
0,005
0,003
Erec Low T
0
0
0
5
10
15
20
25
I C (A)
30
0
With an inductive load at
Tj =
25/125
°C
V DS =
400
V
V GS =
10
V
R gon =
4
Ω
R goff =
4
Ω
copyright Vincotech
4
8
12
16
R G( Ω )
20
With an inductive load at
Tj =
25/125
°C
V DS =
400
V
V GS =
10
V
ID =
15
A
13
07 Apr. 2015 / Revision 6
10-FZ06BIA083FI-P896E
datasheet
Input Boost
Figure 8
Typical switching times as a
function of collector current
t = f(I D)
BOOST MOSFET
Figure 9
Typical switching times as a
function of gate resistor
t = f(R G)
t ( µs)
1
t ( µs)
1
BOOST MOSFET
tdoff
tdoff
tf
0,1
0,1
tdon
tdon
tf
tr
0,01
0,01
tr
0,001
0,001
0
5
10
15
20
25
I D (A)
30
0
With an inductive load at
Tj =
125
°C
V DS =
400
V
V GS =
10
V
R gon =
4
Ω
R goff =
4
Ω
4
8
12
16
R G( Ω )
20
With an inductive load at
Tj =
125
°C
V DS =
400
V
V GS =
10
V
IC =
15
A
Figure 10
Typical reverse recovery time as a
function of collector current
t rr = f(I c)
BOOST FWD
Figure 11
Typical reverse recovery time as a
function of MOSFET turn on gate resistor
t rr = f(R gon)
BOOST FWD
0,03
t rr( µs)
t rr( µs)
0,02
0,025
trr High T
0,016
trr Low T
0,02
0,012
trr High T
0,015
0,008
trr Low T
0,01
0,004
0,005
0
0
0
R (K/W)
At
Tj =
V CE =
V GE =
R gon =
5
25/125
400
10
4
copyright Vincotech
10
15
20
25
I C (A)
30
0
R (K/W)
At
Tj =
VR=
IF=
V GS =
°C
V
V
Ω
14
4
25/125
400
15
10
8
12
16
R Gon ( Ω )
20
°C
V
A
V
07 Apr. 2015 / Revision 6
10-FZ06BIA083FI-P896E
datasheet
Input Boost
Figure 12
Typical reverse recovery charge as a
function of collector current
Q rr = f(I C)
BOOST FWD
Figure 13
Typical reverse recovery charge as a
function of MOSFET turn on gate resistor
Q rr = f(R gon)
0,1
BOOST FWD
Qrr ( µC)
Qrr ( µC)
0,1
Qrr High T
0,08
0,08
Qrr High T
Qrr Low T
0,06
Qrr Low T
0,06
0,04
0,04
0,02
0
0,02
0
At
At
Tj =
V CE =
V GE =
R gon =
5
25/125
400
10
4
10
15
20
25
I C (A)
30
0
At
Tj =
°C
V
V
Ω
VR=
IF=
V GS =
Figure 14
Typical reverse recovery current as a
function of collector current
I RRM = f(I C)
BOOST FWD
4
25/125
400
15
10
8
12
16
20
°C
V
A
V
Figure 15
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I RRM = f(R gon)
BOOST FWD
IrrM (A)
30
IrrM (A)
25
R Gon ( Ω)
IRRM Low T
25
IRRM Low T
20
20
IRRM High T
15
15
IRRM High T
10
10
5
5
0
0
0
At
Tj =
V CE =
V GE =
R gon =
5
25/125
400
10
4
copyright Vincotech
10
15
20
25
I C (A)
30
0
At
Tj =
VR=
IF=
V GS =
°C
V
V
Ω
15
4
25/125
400
15
10
8
12
16
R Gon ( Ω )
20
°C
V
A
V
07 Apr. 2015 / Revision 6
10-FZ06BIA083FI-P896E
datasheet
Input Boost
Figure 16
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI 0/dt ,dI rec/dt = f(I c)
BOOST FWD
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI 0/dt ,dI rec/dt = f(R gon)
6000
BOOST FWD
direc / dt (A/ µs)
direc / dt (A/ µs)
12000
dI0/dt
dIrec/dt
5000
dI0/dt
dIrec/dt
dIrec/dtLow T
10000
di0/dtHigh T
dIrec/dtLow T
4000
8000
dI0/dtLow T
di0/dtLow T
dIrec/dtHigh T
3000
6000
2000
4000
1000
2000
dI0/dtHigh T
dIrec/dtHigh T
0
0
0
At
Tj =
V CE =
V GE =
R gon =
5
25/125
400
10
4
10
15
20
25
I C (A)
30
0
At
Tj =
°C
V
V
Ω
VR=
IF=
V GS =
Figure 18
BOOST MOSFET
IGBT/MOSFET transient thermal impedance
as a function of pulse width
Z thJH = f(t p)
25/125
400
15
10
8
12
R Gon ( Ω)
16
20
°C
V
A
V
Figure 19
FWD transient thermal impedance
as a function of pulse width
Z thJH = f(t p)
BOOST FWD
101
ZthJH (K/W)
ZthJH (K/W)
101
100
10
4
100
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
-1
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
10-2
10-2
10-5
At
D =
R thJH =
10-4
10-3
10-2
10-1
100
t p (s)
101 10
10-5
At
D =
R thJH =
tp/T
0,76
K/W
10-4
10-3
2,34
R (K/W)
0,03247
0,1223
0,4264
0,1173
0,03103
0,03298
R (K/W)
0,1024
0,495
0,9886
0,4865
0,2673
16
100
t p (s)
10110
K/W
FWD thermal model values
copyright Vincotech
10-1
tp/T
IGBT thermal model values
Tau (s)
9,971
1,22
0,1797
0,04698
0,005891
0,000404
10-2
Tau (s)
2,885
0,3437
0,07039
0,01004
0,001614
07 Apr. 2015 / Revision 6
10-FZ06BIA083FI-P896E
datasheet
Input Boost
Figure 20
Power dissipation as a
function of heatsink temperature
P tot = f(T h)
BOOST MOSFET
Figure 21
Collector/Drain current as a
function of heatsink temperature
I C = f(T h)
200
BOOST MOSFET
Ptot (W)
IC (A)
50
160
40
120
30
80
20
40
10
0
0
0
At
Tj =
50
150
100
150
Th ( o C)
200
0
At
Tj =
V GS =
ºC
Figure 22
Power dissipation as a
function of heatsink temperature
P tot = f(T h)
BOOST FWD
50
150
10
100
150
200
ºC
V
Figure 23
Forward current as a
function of heatsink temperature
I F = f(T h)
BOOST FWD
30
Ptot (W)
IF (A)
80
Th ( o C)
25
60
20
40
15
10
20
5
0
0
0
At
Tj =
50
175
copyright Vincotech
100
150
T h ( o C)
200
0
At
Tj =
ºC
17
50
175
100
150
T h ( o C)
200
ºC
07 Apr. 2015 / Revision 6
10-FZ06BIA083FI-P896E
datasheet
Input Boost
Figure 24
Safe operating area as a function
of drain-source voltage
I D = f(V DS)
BOOST MOSFET
Figure 25
BOOST MOSFET
Gate voltage vs Gate charge
V GS = f(Q g)
103
ID (A)
UGS (V)
10
8
10uS
102
120V
480V
1mS
6
100uS
100mS
10mS
101
DC
4
100
2
10
-1
100
At
D =
Th =
V GS =
Tj =
101
10
2
0
V DS (V)
0
At
ID =
single pulse
80
ºC
V
10
T jmax
ºC
copyright Vincotech
18
30
44
60
90
120
150
Qg (nC)
A
07 Apr. 2015 / Revision 6
10-FZ06BIA083FI-P896E
datasheet
Bypass FWD
Figure 1
Typical FWD forward current as
a function of forward voltage
I F= f(V F)
Bypass FWD
Figure 2
FWD transient thermal impedance
as a function of pulse width
Z thJH = f(t p)
50
Bypass FWD
ZthJC (K/W)
IF (A)
101
40
100
30
20
Tj = Tjmax-25°C
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
Tj = 25°C
10
0
0
At
tp =
0,3
0,6
250
0,9
1,2
VF (V)
10-2
1,5
10-5
At
D =
R thJH =
µs
Figure 3
Power dissipation as a
function of heatsink temperature
P tot = f(T h)
Bypass FWD
10-4
10-3
10-2
10-1
100
10110
tp/T
1,677
K/W
Figure 4
Forward current as a
function of heatsink temperature
I F = f(T h)
Bypass FWD
70
Ptot (W)
IF (A)
100
t p (s)
60
80
50
60
40
30
40
20
20
10
0
0
0
At
Tj =
50
150
copyright Vincotech
100
150
T h ( o C)
200
0
At
Tj =
ºC
19
50
150
100
150
T h ( o C)
200
ºC
07 Apr. 2015 / Revision 6
10-FZ06BIA083FI-P896E
datasheet
Thermistor
Figure 1
Typical NTC characteristic
as a function of temperature
R T = f(T )
Thermistor
Figure 2
Typical NTC resistance values



 B25/100⋅ 1 − 1  
 T T 

25  


NTC-typical temperature characteristic
25000
Thermistor
R (Ω)
R(T ) = R25 ⋅ e
[Ω]
20000
15000
10000
5000
0
25
50
copyright Vincotech
75
100
T (°C)
125
20
07 Apr. 2015 / Revision 6
10-FZ06BIA083FI-P896E
datasheet
Switching Definitions BUCK MOSFET
General
Tj
R gon
R goff
conditions
= 124 °C
= 16 Ω
= 4Ω
Figure 1
BUCK MOSFET
Turn-off Switching Waveforms & definition of t doff, t Eoff
(t E off = integrating time for E off)
Figure 2
BUCK MOSFET
Turn-on Switching Waveforms & definition of t don, t Eon
(t E on = integrating time for E on)
140
510
120
430
IC
tdoff
VCE
100
350
VGE 90%
VCE 90%
80
270
%
IC
%60
190
40
tEoff
IC 1%
VCE
110
20
tdon
VGE
30
0
-20
-0,1
VGE10%
IC10%
tEon
-50
-0,05
0
V GE (0%) =
V GE (100%) =
V C (100%) =
I C (100%) =
t doff =
t E off =
0,05
0,1
time (us)
0
10
400
15
0,13
0,15
0,15
0,2
0,25
2,9
V
V
V
A
µs
µs
2,95
3
V GE (0%) =
V GE (100%) =
V C (100%) =
I C (100%) =
t don =
t E on =
Figure 3
BUCK MOSFET
Turn-off Switching Waveforms & definition of t f
3,05
0
10
400
15
0,06
0,19
VCE5%
3,1
3,15
time(us)
3,2
3,25
3,3
V
V
V
A
µs
µs
Figure 4
BUCK MOSFET
Turn-on Switching Waveforms & definition of t r
120
510
fitted
Ic
430
100
IC
IC 90%
350
80
IC 60%
60
270
%
%
IC 40%
40
190
110
20
VCE
IC90%
30
0
-20
0,07
tf
0,075
VCE
IC10%
0,08
V C (100%) =
I C (100%) =
tf =
copyright Vincotech
0,085
400
15
0,01
tr
IC10%
-50
0,09
time (us)
0,095
0,1
0,105
2,9
0,11
2,95
3
3,05
3,1
3,15
3,2
3,25
3,3
time(us)
V
A
µs
V C (100%) =
I C (100%) =
tr =
21
400
15
0,02
V
A
µs
07 Apr. 2015 / Revision 6
10-FZ06BIA083FI-P896E
datasheet
Switching Definitions BUCK MOSFET
Figure 5
BUCK MOSFET
Turn-off Switching Waveforms & definition of t Eoff
Figure 6
BUCK MOSFET
Turn-on Switching Waveforms & definition of t Eon
150
550
Eoff
%
%
120
450
90
350
60
250
Pon
150
30
Eon
Poff
50
0
tEoff
VGE90%
-30
-0,1
-0,05
P off (100%) =
E off (100%) =
t E off =
0
0,05
time (us)
6,13
0,02
0,15
0,1
VCE3%
VGE10%
IC 1%
tEon
0,15
-50
2,95
0,2
kW
mJ
µs
3
P on (100%) =
E on (100%) =
t E on =
Figure 7
Output inverter FWD
Gate voltage vs Gate charge (measured)
3,05
6,13
2,27
0,19
3,1
time(us)
3,15
3,2
3,25
kW
mJ
µs
Figure 8
BUCK MOSFET
Turn-off Switching Waveforms & definition of t rr
15
350
fitted
10
150
VGE (V)
250
50
5
% -50
Id
trr
Vd
IRRM10%
-150
0
-250
IRRM90%
-350
IRRM100%
-5
-450
-20
0
20
V GE off =
V GE on =
V C (100%) =
I C (100%) =
Qg =
copyright Vincotech
40
60
0
10
400
15
159,93
80
Qg (nC)
100
120
140
160
180
3
V
V
V
A
nC
3,05
V d (100%) =
I d (100%) =
I RRM (100%) =
t rr =
22
3,1
400
15
-63
0,11
3,15
time(us)
3,2
3,25
3,3
V
A
A
µs
07 Apr. 2015 / Revision 6
10-FZ06BIA083FI-P896E
datasheet
Switching Definitions BUCK MOSFET
Figure 9
Output inverter FWD
Turn-on Switching Waveforms & definition of t Qrr
(t Q rr = integrating time for Q rr)
Figure 10
Output inverter FWD
Turn-on Switching Waveforms & definition of t Erec
(t Erec= integrating time for E rec)
200
200
Qrr
150
150
Id
100
Erec
100
tQrr
% 50
%
50
0
tErec
-50
0
Prec
-100
3
3,06
3,12
I d (100%) =
Q rr (100%) =
t Q rr =
3,18
3,24
time(us)
3,3
3,36
3,42
-50
3,48
3
15
A
4,31
µC
###### µs
3,2
P rec (100%) =
E rec (100%) =
t E rec =
3,4
3,6
3,8
time(us)
4
4,2
6,13
kW
0,17
mJ
###### µs
Measurement circuits
Figure 11
BUCK stage switching measurement circuit
copyright Vincotech
23
07 Apr. 2015 / Revision 6
10-FZ06BIA083FI-P896E
datasheet
Ordering Code and Marking - Outline - Pinout
Ordering Code & Marking
Version
without thermal paste 12mm housing
with thermal paste 12mm housing
Ordering Code
10-FZ06BIA083FI-P896E
10-FZ06BIA083FI-P896E-/3/
in DataMatrix as in packaging barcode as
P896E
P896E
P896E
P896E-/3/
Outline
Pinout
copyright Vincotech
24
07 Apr. 2015 / Revision 6
10-FZ06BIA083FI-P896E
datasheet
DISCLAIMER
The information given in this datasheet describes the type of component and does not represent assured
characteristics. For tested values please contact Vincotech.Vincotech reserves the right to make changes without further
notice to any products herein to improve reliability, function or design. Vincotech does not assume any liability arising
out of the application or use of any product or circuit described herein; neither does it convey any license under its
patent rights, nor the rights of others.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the
express written approval of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use
provided in labelling can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
copyright Vincotech
25
07 Apr. 2015 / Revision 6
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